Temperature-Dependent Excitonic Photoluminescence and Nonlinear Absorption of CdTe Nanocrystal/Polyvinyl Alcohol Films

The temperature dependence of the excitonic photoluminescence (PL) and nonlinear absorption characteristics of CdTe nanocrystals (NCs)/polyvinyl alcohol (PVA) film are investigated using steady-state/time-resolved PL spectroscopy and Z-scan methods. The excitonic PL peaks of CdTe NCs can be observed at the wavelengths from 560 to 670 nm, with size changes from 2.1 to 3.9 nm. From the temperature-dependent PL spectra, the smaller photon energy of the PL emission peak, the rapidly decreasing PL intensity, and the wider linewidth are observed with increasing temperature from 80 to 300 K. It is revealed that the exciton PL is composed of both trapped state and band-edge excitonic state, which presents biexponential fitting dynamics. The short-lived species is due to the surface-trapped state recombination in NCs, which has a photogenerated trapped channel and a time-resolved peak shift. The species with a long-lived lifetime is ascribed to the intrinsic excitonic recombination. Through the femtosecond Z-scan method, the nonlinear absorption coefficient becomes smaller with the increase in the size of the NCs. The optical properties of the CdTe NC/PVA film show the potential of II-VI traditional NCs as display and luminescent materials that can utilize the combination of exciton PL and nonlinear absorption for expanded functionality.

Hole Transfer Layer Engineering for CdTe Nanocrystal Photovoltaics with Improved Efficiency

Interface engineering has led to significant progress in solution-processed CdTe nanocrystal (NC) solar cells in recent years. High performance solar cells can be fabricated by introducing a hole transfer layer (HTL) between CdTe and a back contact electrode to reduce carrier recombination by forming interfacial dipole effect at the interface. Here, we report the usage of a commercial product 2,2′,7,7′-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene (Spiro) as a hole transfer layer to facilitate the hole collecting for CdTe nanocrystal solar cells. It is found that heat treatment on the hole transfer layer has significant influence on the NC solar cells performance. The Jsc, Voc, and power conversion efficiency (PCE) of NC solar cells are simultaneously increased due to the decreased contact resistance and enhanced built-in electric field. We demonstrate solar cells that achieve a high PCE of 8.34% for solution-processed CdTe NC solar cells with an inverted structure by further optimizing the HTL annealing temperature, which is among the highest value in CdTe NC solar cells with the inverted structure.

Surface passivation via acid vapor etching enables efficient and stable solution-processed CdTe nanocrystal solar cells

Achieving stable and low-resistance interfaces for hole transport layers with well-matched energy levels is crucial to maximize the performance of solution-processed CdTe nanocrystal (NC) based solar cells.

The Effects of ZnTe:Cu Back Contact on the Performance of CdTe Nanocrystal Solar Cells with Inverted Structure

CdTe nanocrystal (NC) solar cells have received much attention in recent years due to their low cost and environmentally friendly fabrication process. Nowadays, the back contact is still the key issue for further improving device performance. It is well known that, in the case of CdTe thin-film solar cells prepared with the close-spaced sublimation (CSS) method, Cu-doped CdTe can drastically decrease the series resistance of CdTe solar cells and result in high device performance. However, there are still few reports on solution-processed CdTe NC solar cells with Cu-doped back contact. In this work, ZnTe:Cu or Cu:Au back contact layer (buffer layer) was deposited on the CdTe NC thin film by thermal evaporation and devices with inverted structure of ITO/ZnO/CdSe/CdTe/ZnTe:Cu (or Cu)/Au were fabricated and investigated. It was found that, comparing to an Au or Cu:Au device, the incorporation of ZnTe:Cu as a back contact layer can improve the open circuit voltage (Voc) and fill factor (FF) due to an optimized band alignment, which results in enhanced power conversion efficiency (PCE). By carefully optimizing the treatment of the ZnTe:Cu film (altering the film thickness and annealing temperature), an excellent PCE of 6.38% was obtained, which showed a 21.06% improvement compared with a device without ZnTe:Cu layer (with a device structure of ITO/ZnO/CdSe/CdTe/Au).

Efficient CdTe Nanocrystal/TiO2 Hetero-Junction Solar Cells with Open Circuit Voltage Breaking 0.8 V by Incorporating A Thin Layer of CdS Nanocrystal

Nanocrystal solar cells (NCs) allow for large scale solution processing under ambient conditions, permitting a promising approach for low-cost photovoltaic products. Although an up to 10% power conversion efficiency (PCE) has been realized with the development of device fabrication technologies, the open circuit voltage (Voc) of CdTe NC solar cells has stagnated below 0.7 V, which is significantly lower than most CdTe thin film solar cells fabricated by vacuum technology (around 0.8 V~0.9 V). To further improve the NC solar cells’ performance, an enhancement in the Voc towards 0.8–1.0 V is urgently required. Given the unique processing technologies and physical properties in CdTe NC, the design of an optimized band alignment and improved junction quality are important issues to obtain efficient solar cells coupled with high Voc. In this work, an efficient method was developed to improve the performance and Voc of solution-processed CdTe nanocrystal/TiO2 hetero-junction solar cells. A thin layer of solution-processed CdS NC film (~5 nm) as introduced into CdTe NC/TiO2 to construct hetero-junction solar cells with an optimized band alignment and p-n junction quality, which resulted in a low dark current density and reduced carrier recombination. As a result, devices with improved performance (5.16% compared to 2.63% for the control device) and a Voc as high as 0.83 V were obtained; this Voc value is a record for a solution-processed CdTe NC solar cell.