Enhanced Thermal Stability of Low-k Ethyl-Bridged Organosilicas Using Laser Spike Annealing

2019 ◽  
Vol 1 (7) ◽  
pp. 1243-1250
Author(s):  
Zeming Sun ◽  
Robert T. Bell ◽  
Michael O. Thompson
Keyword(s):  
Thermal Stability ◽  
Spike Annealing ◽  
Low K ◽  
Thermal Stability Of

Diamondlike Carbon Materials as Low-k Dielectrics for Multilevel Interconnects in Ulsi

1996 ◽  
Vol 443 ◽  
Author(s):  
A. Grill ◽  
V. Patel ◽  
K.L. Saenger ◽  
C. Jahnes ◽  
S.A. Cohen ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Dielectric Constants ◽  
Internal Stresses ◽  
Diamondlike Carbon ◽  
Potential Applications ◽  
Etch Stop ◽  
Si Content ◽  
Low K ◽  
Thermal Stability Of

AbstractA variety of diamondlike carbon (DLC) materials were investigated for their potential applications as low-k dielectrics for the back end of the line (BEOL) interconnect structures in ULSI circuits. Hydrogenated DLC and fluorine containing DLC (FDLC) were studied as a low-k interlevel and intralevel dielectrics (ILD), while silicon containing DLC (SiDLC) was studied as a potential low-k etch stop material between adjacent DLC based ILD layers, which can be patterned by oxygen-based plasma etchingIt was found that the dielectric constant (k) of the DLC films can be varied between >3.3 and 2.7 by changing the deposition conditions. The thermal stability of these DLC films was found to be correlated to the values of the dielectric constant, decreasing with decreasing k. While DLC films having dielectric constants k>3.3 appeared to be stable to anneals of 4 hours at 400 °C in He, a film having a dielectric constant of 2.7 was not, losing more than half of its thickness upon exposure to the same anneal. The stresses in the DLC films were found to decrease with decreasing dielectric constant, from 700 MPa to about 250 MPa. FDLC films characterized by a dielectric constant of about 2.8 were found to have similar thermal stability as DLC films with k >3.3. The thermally stable FDLC films have internal stresses <300 MPa and are thus promising candidates as a low-k ILD.For the range of Si contents examined (0-9% C replacement by Si), SiDLC films with a Si content of around 5% appear to provide an effective etch-stop for oxygen RIE of DLC or FDLC films, while retaining desirable electrical characteristics. These films showed a steady state DLC/SiDLC etch rate ratio of about 17, and a dielectric constant only about 30% higher than the 3.3 of DLC.

A Correlation Study of Thermal Stability on Porous Low k

2002 ◽  
Vol 716 ◽  
Author(s):  
Y.F. Chow ◽  
T.H. Foo ◽  
L. Shen ◽  
J.S. Pan ◽  
A.Y. Du ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Annealing Temperature ◽  
Correlation Study ◽  
Film Properties ◽  
Unannealed Sample ◽  
Nano Indentation ◽  
Low K ◽  
Thermal Stability Of

AbstractThe thermal stability of organic porous low k, porous SiLK with a dielectric constant of 2.4, has been studied. Organic low k material SiLKTM, non-porous SiLK, with a dielectric constant 2.8 is used as a baseline for comparison. Each sample was subjected to annealing cycles, where each cycle was conducted in a vertical furnace for one hour in an N2 ambient. The annealing temperature was set at either 430°C or 450°C. After every alternate cycle, the film properties were measured and compared to the unannealed sample for changes in film shrinkage, refractive index, dielectric constant, roughness, breakdown voltage, pore size, hardness and Young's modulus. Changes in film properties were investigated and evaluated by using opti-probe, FTIR, XPS, AFM, mercury probe, nano-indentation, SEM and TEM techniques.

Thermal Stability of High k Layers

2002 ◽  
Vol 745 ◽  
Author(s):  
C. Zhao ◽  
V. Cosnier ◽  
P. J. Chen ◽  
O. Richard ◽  
G. Roebben ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Phase Transformation ◽  
Surface Preparation ◽  
Thermal Exposure ◽  
Amorphous Phases ◽  
High K ◽  
M Phase ◽  
Crystallization Onset Temperatures ◽  
Spike Annealing ◽  
Thermal Stability Of

ABSTRACTThermal stability of amorphous phases in various high-k layers (Al2O3, ZrO2, HfO2, ZrAlOx, HfAlOx and HfSiOx) and the phase transformation of crystalline ZrO2 and HfO2 were studied experimentally, as functions of surface preparation, deposition conditions, material composition and post deposition thermal treatment. It is found that pure ZrO2 and HfO2 show relatively low crystallization onset temperatures. The crystalline ZrO2 or HfO2 phases are tetragonal or monoclinic, depending on the layer thickness. The phase transformation of metastable t-phase into stable m-phase has been observed in ZrO2 and HfO2. Crystallization behavior of Al2O3 depends on the surface preparation of the substrate. ALCVD grown Al2O3 layers on an oxide-based surface remain amorphous after 1100°C spike annealing, while those on HF-last surface crystallize at temperatures around 800°C. Alloying Al2O3 into ZrO2 and HfO2 can improve their resistance to crystallization under thermal exposure. The kinetics of the crystallization in the alloys can be described by linear TTT curves. Hf-aluminates show better thermal stability than Zr-aluminates. A defect model relative to the phase transformation is discussed, based on the above observations.

STUDY OF THE THERMAL STABILITY OF AN ORGANIC POLYMER LOW-K MATERIAL

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4441-4444 ◽  
Author(s):  
DONG LU ◽  
ZHENXIANG XING
Keyword(s):  
Carbon Dioxide ◽  
Thermal Stability ◽  
Thermal Decomposition ◽  
Aromatic Hydrocarbon ◽  
Aromatic Compounds ◽  
Polymer Materials ◽  
Organic Polymer ◽  
Copper Metallization ◽  
Low K ◽  
Thermal Stability Of

Polymer low-k materials have been regarded as one of the most promising candidates as interconnect insulator with copper metallization. One of the major problems associated with polymer materials is their poor thermal stability. In this paper, thermal stability of an aromatic hydrocarbon low-k material was studied using TGA, FTIR and thermal desorption-GC-MS techniques. The material is thermally stable at temperatures up to 430°C. At higher temperatures, thermal decomposition of the low-k material is pronounced and the major outgassing species are aromatic compounds and carbon dioxide.

Broadband Dielectric Spectroscopic Characterization of Thermal Stability of Low-k Dielectric Thin Films for Micro- and Nanoelectronic Applications

2017 ◽  
Vol 80 (1) ◽  
pp. 253-264 ◽  
Author(s):  
Christopher E Sunday ◽  
Karl R. Montgomery ◽  
Papa K. Amoah ◽  
Emmanuel I Iwuoha ◽  
Yaw S. Obeng
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Spectroscopic Characterization ◽  
Dielectric Thin Films ◽  
Low K ◽  
Thermal Stability Of
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