Broadband Dielectric Spectroscopic Characterization of Thermal Stability of Low-k Dielectric Thin Films for Micro- and Nanoelectronic Applications

2017 ◽  
Vol 80 (1) ◽  
pp. 253-264 ◽  
Author(s):  
Christopher E Sunday ◽  
Karl R. Montgomery ◽  
Papa K. Amoah ◽  
Emmanuel I Iwuoha ◽  
Yaw S. Obeng
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Spectroscopic Characterization ◽  
Dielectric Thin Films ◽  
Low K ◽  
Thermal Stability Of

Broadband Spectroscopic Characterization of Hybrid Low-k Dielectric Thin Films for Micro- and Nanoelectronic Applications

2016 ◽  
Vol 75 (5) ◽  
pp. 199-206
Author(s):  
Y. S. Obeng ◽  
C. A. Okoro ◽  
K. R. Montgomery ◽  
P. K. Amoah ◽  
L. You ◽  
...  
Keyword(s):  
Thin Films ◽  
Spectroscopic Characterization ◽  
Dielectric Thin Films ◽  
Low K

Mechanical characterization of low-k and barrier dielectric thin films

2005 ◽  
Vol 82 (3-4) ◽  
pp. 368-373 ◽  
Author(s):  
N. Chérault ◽  
G. Carlotti ◽  
N. Casanova ◽  
P. Gergaud ◽  
C. Goldberg ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Characterization ◽  
Dielectric Thin Films ◽  
Low K

scholarly journals Comprehensive microstructural and optical characterization of the thermal stability of aluminum-titanium oxynitride thin films after high temperature annealing in air

2021 ◽  
Author(s):  
R. Escobar-Galindo ◽  
I. Heras ◽  
E. Guillén ◽  
F. Munnik ◽  
I. Azkona ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
High Temperature ◽  
Dielectric Behavior ◽  
Vacuum Arc ◽  
Surface Oxide Layer ◽  
High Temperature Annealing ◽  
Elastic Recoil ◽  
Thermal Stability Of

AbstractThe thermal stability of two AlyTi1-y(OxN1-x) layers prepared by cathodic vacuum arc deposition with different oxygen content was studied after high temperature annealing of the samples in air. These layers were designed to be part of solar-selective coating (SSC) stacks. Compositional and microstructural characterization of the thin films was performed before and after the thermal treatment by elastic recoil detection (ERD), transmission electron microscopy, and Raman spectroscopy. AlyTi1-yN sample was stable after 2 h of annealing at 450 °C. Initial stages of the formation of a surface oxide layer after annealing at 650 °C were observed both by ERD and Raman analysis. Contrarily, no changes were found after 2 h annealing treatment either at 450 and 650 °C in the composition and microstructure of AlyTi1-y(OxN1-x) sample. In both samples, the formation of a surface anatase TiO2 film was reported after 2 h annealing at 800 °C. These compositional and microstructural changes were correlated with the optical properties determined by spectroscopic ellipsometry. A transition from metallic to dielectric behavior with increasing annealing temperature was observed. These results complete the durability studies on the designed SSC based on AlyTi1-y(OxN1-x) materials, confirming that these stacks withstand breakdown at 600 °C in air.

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