Threshold Voltage Modulation in a Transistor with a Two-Dimensional Electron Gas Channel at the Interface between Al2O3 and Sub-5 nm ZnO Films

2021 ◽  
Author(s):  
Hyun Jae Lee ◽  
Taehwan Moon ◽  
Sukin Kang ◽  
Woohyun Kim ◽  
Cheol Seong Hwang
Keyword(s):  
Threshold Voltage ◽  
Electron Gas ◽  
Zno Films ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Gas Channel ◽  
Dimensional Electron Gas

Strong interfacial coupling effects of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructures

2019 ◽  
Vol 7 (19) ◽  
pp. 5677-5685 ◽  
Author(s):  
Guanjie Li ◽  
Xiaomin Li ◽  
Junliang Zhao ◽  
Qiuxiang Zhu ◽  
Yongbo Chen
Keyword(s):  
Threshold Voltage ◽  
Electron Gas ◽  
Ferroelectric Polarization ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Interfacial Coupling ◽  
Coupling Effects ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

Strong interfacial coupling between ferroelectric polarization and 2DEG is demonstrated in BTO/MgO/AlGaN/GaN/Si with a large threshold voltage for E-mode HEMT devices.

scholarly journals Spin transport in polarization induced two-dimensional electron gas channel in c-GaN nano-wedges

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Swarup Deb ◽  
Subhabrata Dhar
Keyword(s):  
Strong Dependence ◽  
Electron Gas ◽  
Vertical Plane ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Spin Orientation ◽  
Two Dimensional Electron Gas ◽  
Gas Channel ◽  
Dimensional Electron Gas ◽  
Rashba Coupling

AbstractA two-dimensional electron gas (2DEG), which has recently been shown to develop in the central vertical plane of a wedge-shaped c-oriented GaN nanowall due to spontaneous polarization effect, offers a unique scenario, where the symmetry between the conduction and valence band is preserved over the entire confining potential. This results in the suppression of Rashba coupling even when the shape of the wedge is not symmetric. Here, for such a 2DEG channel, relaxation time for different spin projections is calculated as a function of donor concentration and gate bias. Our study reveals a strong dependence of the relaxation rate on the spin-orientation and density of carriers in the channel. Most interestingly, relaxation of spin oriented along the direction of confinement has been found to be completely switched off. Upon applying a suitable bias at the gate, the process can be switched on again. Exploiting this fascinating effect, an electrically driven spin-transistor has been proposed.

Creation of a Short-Range Ordered Two-Dimensional Electron Gas Channel in Al2O3/In2O3 Interfaces

ACS Nano ◽  
2017 ◽  
Vol 11 (6) ◽  
pp. 6040-6047 ◽  
Author(s):  
Sang Yeon Lee ◽  
Jinseo Kim ◽  
Ayoung Park ◽  
Jucheol Park ◽  
Hyungtak Seo
Keyword(s):  
Short Range ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Gas Channel ◽  
Dimensional Electron Gas

Surface roughness scattering in two dimensional electron gas channel

2010 ◽  
Vol 97 (26) ◽  
pp. 262111 ◽  
Author(s):  
B. Liu ◽  
Y. W. Lu ◽  
G. R. Jin ◽  
Y. Zhao ◽  
X. L. Wang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Gas Channel ◽  
Surface Roughness Scattering ◽  
Dimensional Electron Gas
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