Interfacial misfit dislocation scattering effect in two-dimensional electron gas channel of GaN heterojunction

2012 ◽  
Vol 376 (10-11) ◽  
pp. 1067-1071 ◽  
Author(s):  
Bing Liu ◽  
Yanwu Lu ◽  
Yan Huang ◽  
Guipeng Liu ◽  
Qinsheng Zhu ◽  
...  
Keyword(s):  
Misfit Dislocation ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Gas Channel ◽  
Scattering Effect ◽  
Dimensional Electron Gas

scholarly journals Spin transport in polarization induced two-dimensional electron gas channel in c-GaN nano-wedges

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Swarup Deb ◽  
Subhabrata Dhar
Keyword(s):  
Strong Dependence ◽  
Electron Gas ◽  
Vertical Plane ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Spin Orientation ◽  
Two Dimensional Electron Gas ◽  
Gas Channel ◽  
Dimensional Electron Gas ◽  
Rashba Coupling

AbstractA two-dimensional electron gas (2DEG), which has recently been shown to develop in the central vertical plane of a wedge-shaped c-oriented GaN nanowall due to spontaneous polarization effect, offers a unique scenario, where the symmetry between the conduction and valence band is preserved over the entire confining potential. This results in the suppression of Rashba coupling even when the shape of the wedge is not symmetric. Here, for such a 2DEG channel, relaxation time for different spin projections is calculated as a function of donor concentration and gate bias. Our study reveals a strong dependence of the relaxation rate on the spin-orientation and density of carriers in the channel. Most interestingly, relaxation of spin oriented along the direction of confinement has been found to be completely switched off. Upon applying a suitable bias at the gate, the process can be switched on again. Exploiting this fascinating effect, an electrically driven spin-transistor has been proposed.

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