Strong interfacial coupling effects of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructures

2019 ◽  
Vol 7 (19) ◽  
pp. 5677-5685 ◽  
Author(s):  
Guanjie Li ◽  
Xiaomin Li ◽  
Junliang Zhao ◽  
Qiuxiang Zhu ◽  
Yongbo Chen

Strong interfacial coupling between ferroelectric polarization and 2DEG is demonstrated in BTO/MgO/AlGaN/GaN/Si with a large threshold voltage for E-mode HEMT devices.

2015 ◽  
Vol 17 (19) ◽  
pp. 12812-12825 ◽  
Author(s):  
Vladislav Borisov ◽  
Sergey Ostanin ◽  
Ingrid Mertig

Using first-principles methods we demonstrate the possibility of using the ferroelectric polarization to create and control a two-dimensional electron gas at a multiferroic oxide interface.


Nanoscale ◽  
2021 ◽  
Author(s):  
Woonbae Sohn ◽  
Taemin Ludvic Kim ◽  
Tae Hyung Lee ◽  
Sangmoon Yoon ◽  
Chungsoo Kim ◽  
...  

A quasi-two-dimensional electron gas (2DEG) evolved at the LaAlO3 (LAO)/SrTiO3 (STO) interface has attracted significant attention, because the insertion of perovskite titanates can tune the 2DEG conductivity.


Sign in / Sign up

Export Citation Format

Share Document