Strong interfacial coupling effects of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructures
2019 ◽
Vol 7
(19)
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pp. 5677-5685
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Keyword(s):
Strong interfacial coupling between ferroelectric polarization and 2DEG is demonstrated in BTO/MgO/AlGaN/GaN/Si with a large threshold voltage for E-mode HEMT devices.
2002 ◽
Vol 41
(Part 1, No. 4B)
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pp. 2528-2530
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2015 ◽
Vol 17
(19)
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pp. 12812-12825
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2010 ◽
Vol 25
(3)
◽
pp. 035011
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2001 ◽
1984 ◽
Vol 127
(1-3)
◽
pp. 388-388
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1991 ◽
Vol 161
(6)
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pp. 201
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