Deep ultraviolet photodetector based on pulsed laser deposited Cs3Cu2I5 films/n-Si heterojunction

2021 ◽  
Author(s):  
Li Xiaoxuan ◽  
Lichun Zhang ◽  
Zhou Xiaoyu ◽  
Cheng Wang ◽  
Zhou Zhiying ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
Ultraviolet Photodetector ◽  
Deep Ultraviolet

Thermal Modeling of the Cavity in Pulsed Excimer Laser Calorimeters

2000 ◽  
Author(s):  
D. H. Chen ◽  
Z. M. Zhang
Keyword(s):  
Laser Heating ◽  
Average Power ◽  
Pulsed Laser ◽  
Thermal Response ◽  
Element Model ◽  
Electrical Heating ◽  
Deep Ultraviolet ◽  
Simplified Finite Element Model ◽  
193 Nm ◽  
Pulsed Laser Heating

Abstract A simplified finite element model is built to study the thermal response of the 193-nm pulsed-laser calorimeter. The nonequivalence between pulsed-laser heating and electrical heating is estimated to be 0.46% at the thermocouple locations by comparing the calibration factors for average-power laser heating and electrical heating. This study should help the development of calibration and measurement standards in pulsed energy measurements for deep ultraviolet excimer lasers that are important for photolithographic and materials processing applications.

Cubic MgZnO Deep-ultraviolet Photodetector with High Responsivity

2014 ◽  
Vol 35 (11) ◽  
pp. 1291-1296
Author(s):  
郑剑 ZHENG Jian ◽  
乔倩 QIAO Qian ◽  
张振中 ZHANG Zhen-zhong ◽  
王立昆 WANG Li-kun ◽  
韩舜 HAN Shun ◽  
...  
Keyword(s):  
Ultraviolet Photodetector ◽  
High Responsivity ◽  
Deep Ultraviolet

scholarly journals Improved Performance of Deep Ultraviolet Photodetector From Sputtered Ga2O3 Films Using Post-Thermal Treatments

2019 ◽  
Vol 11 (6) ◽  
pp. 1-8 ◽  
Author(s):  
Hui Li ◽  
Po-Wei Chen ◽  
Shuo-Huang Yuan ◽  
Tsun-Min Huang ◽  
Sam Zhang ◽  
...  
Keyword(s):  
Thermal Treatments ◽  
Ultraviolet Photodetector ◽  
Deep Ultraviolet ◽  
Improved Performance

A 2DEG back-gated graphene/AlGaN deep-ultraviolet photodetector with ultrahigh responsivity

2020 ◽  
Vol 29 (12) ◽  
pp. 128502
Author(s):  
Jinhui Gao ◽  
Yehao Li ◽  
Yuxuan Hu ◽  
Zhitong Wang ◽  
Anqi Hu ◽  
...  
Keyword(s):  
Ultraviolet Photodetector ◽  
Deep Ultraviolet

scholarly journals An Amorphous (Al0.12Ga0.88)2O3 Deep Ultraviolet Photodetector

2020 ◽  
Vol 12 (4) ◽  
pp. 1-8 ◽  
Author(s):  
Shu-Bai Liu ◽  
Shoou-Jinn Chang ◽  
Sheng-Po Chang ◽  
Chia-Hsun Chen
Keyword(s):  
Ultraviolet Photodetector ◽  
Deep Ultraviolet

scholarly journals Deep-Level Traps Responsible for Persistent Photocurrent in Pulsed-Laser-Deposited β-Ga2O3 Thin Films

Crystals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1046
Author(s):  
Bhera Ram Tak ◽  
Ming-Min Yang ◽  
Marin Alexe ◽  
Rajendra Singh
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Deep Level ◽  
Electronic Devices ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Wide Bandgap ◽  
Trap Level ◽  
Characteristic Peak ◽  
Deep Ultraviolet

Gallium oxide (β-Ga2O3) is emerging as a promising wide-bandgap semiconductor for optoelectronic and high-power electronic devices. In this study, deep-level defects were investigated in pulsed-laser-deposited epitaxial films of β-Ga2O3. A deep ultraviolet photodetector (DUV) fabricated on β-Ga2O3 film showed a slow decay time of 1.58 s after switching off 250 nm wavelength illumination. Generally, β-Ga2O3 possesses various intentional and unintentional trap levels. Herein, these traps were investigated using the fractional emptying thermally stimulated current (TSC) method in the temperature range of 85 to 473 K. Broad peaks in the net TSC curve were observed and further resolved to identify the characteristic peak temperature of individual traps using the fractional emptying method. Several deep-level traps having activation energies in the range of 0.16 to 1.03 eV were identified. Among them, the trap with activation energy of 1.03 eV was found to be the most dominant trap level and it was possibly responsible for the persistent photocurrent in PLD-grown β-Ga2O3 thin films. The findings of this current work could pave the way for fabrication of high-performance DUV photodetectors.

scholarly journals β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes

AIP Advances ◽  
2016 ◽  
Vol 6 (4) ◽  
pp. 045009 ◽  
Author(s):  
L. X. Qian ◽  
X. Z. Liu ◽  
T. Sheng ◽  
W. L. Zhang ◽  
Y. R. Li ◽  
...  
Keyword(s):  
Ultraviolet Photodetector ◽  
Solar Blind ◽  
Deep Ultraviolet ◽  
Terminal Structure

scholarly journals In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity

Nano Research ◽  
2018 ◽  
Vol 12 (1) ◽  
pp. 183-189 ◽  
Author(s):  
Ranran Zhuo ◽  
Longhui Zeng ◽  
Huiyu Yuan ◽  
Di Wu ◽  
Yuange Wang ◽  
...  
Keyword(s):  
Ultraviolet Photodetector ◽  
In Situ Fabrication ◽  
Deep Ultraviolet ◽  
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