Boron Nitride Nanotube Nucleation during Ni-Catalyzed Boron Oxide Chemical Vapor Deposition

2019 ◽  
Vol 123 (45) ◽  
pp. 27875-27883 ◽  
Author(s):  
Ben McLean ◽  
Grant B. Webber ◽  
Alister J. Page
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Boron Oxide ◽  
Chemical Vapor ◽  
Boron Nitride Nanotube

Low Temperature Chemical Vapor Deposition of Hafnium Nitride−Boron Nitride Nanocomposite Films

2009 ◽  
Vol 21 (23) ◽  
pp. 5601-5606 ◽  
Author(s):  
Navneet Kumar ◽  
Wontae Noh ◽  
Scott R. Daly ◽  
Gregory S. Girolami ◽  
John R. Abelson
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocomposite Films ◽  
Hafnium Nitride

scholarly journals Carbon-assisted chemical vapor deposition of hexagonal boron nitride

2D Materials ◽  
2017 ◽  
Vol 4 (2) ◽  
pp. 025117 ◽  
Author(s):  
Ariel Ismach ◽  
Harry Chou ◽  
Patrick Mende ◽  
Andrei Dolocan ◽  
Rafik Addou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor

Chemical vapor deposition of boron nitride using premixed borontrichloride and ammonia

1991 ◽  
Vol 6 (11) ◽  
pp. 2393-2396 ◽  
Author(s):  
Vladimir Pavlović ◽  
Horst-Rainer Kötter ◽  
Christoph Meixner
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Elevated Temperatures ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Deposit Formation ◽  
Deposition Zone ◽  
Single Tube ◽  
N Compounds

Chemical vapor deposition (CVD) of boron nitride (BN) is most readily performed using BCl3 and NH3, which are brought into the deposition zone through two separate tubes. This causes some problems: inadequate mixing leading to a nonuniform deposit, formation of solid intermediates, etc. To avoid these problems, the process was performed by mixing BCl3 and NH3 at elevated temperatures (120–220 °C) prior to entering the deposition zone. The reaction between them took place by the forming of volatile stoichiometric B–N compounds (trichloroborazine and iminochloroborane), which were then transported through a single tube into a deposition zone. The resulting deposit was found to be hexagonal boron nitride.

Boron nitride nanotube growth via boron oxide assisted chemical vapor transport-deposition process using LiNO3 as a promoter

Nano Research ◽  
2015 ◽  
Vol 8 (6) ◽  
pp. 2063-2072 ◽  
Author(s):  
Andrei T. Matveev ◽  
Konstantin L. Firestein ◽  
Alexander E. Steinman ◽  
Andrey M. Kovalskii ◽  
Oleg I. Lebedev ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Boron Oxide ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Boron Nitride Nanotube ◽  
Nanotube Growth ◽  
Vapor Transport Deposition

scholarly journals Plasma enhanced chemical vapor deposition and characterization of boron nitride gate insulators on InP

1991 ◽  
Vol 70 (8) ◽  
pp. 4366-4370 ◽  
Author(s):  
A. Bath ◽  
P. J. van der Put ◽  
J. G. M. Becht ◽  
J. Schoonman ◽  
B. Lepley
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gate Insulators
Sign in / Sign up

Export Citation Format

Share Document