Boron Nitride Nanotube Nucleation via Network Fusion during Catalytic Chemical Vapor Deposition

2019 ◽  
Vol 141 (34) ◽  
pp. 13385-13393 ◽  
Author(s):  
Ben McLean ◽  
Grant B. Webber ◽  
Alister J. Page
2010 ◽  
Vol 22 (5) ◽  
pp. 1782-1787 ◽  
Author(s):  
Chee Huei Lee ◽  
Ming Xie ◽  
Vijaya Kayastha ◽  
Jiesheng Wang ◽  
Yoke Khin Yap

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.


2009 ◽  
Vol 21 (23) ◽  
pp. 5601-5606 ◽  
Author(s):  
Navneet Kumar ◽  
Wontae Noh ◽  
Scott R. Daly ◽  
Gregory S. Girolami ◽  
John R. Abelson

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