vapor transport deposition
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Importance of fine Control of Se Flux for Improving Performances of Sb 2 Se 3 Solar Cells Prepared by Vapor Transport Deposition

Solar RRL ◽  
2021 ◽  
Author(s):  
Jekyung Kim ◽  
Seunghwan Ji ◽  
Yuseong Jang ◽  
Giuk Jeong ◽  
Jiwoon Choi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Vapor Transport ◽  
Fine Control ◽  
Vapor Transport Deposition

Towards Perovskite Vapor Transport Deposition: PbI2 Deposition and Modeling in a Close Space Vapor Transport Configuration

2021 ◽  
Author(s):  
Alexander J. Harding ◽  
Austin G. Kuba ◽  
Kevin D. Dobson ◽  
Ujjwal K. Das ◽  
Babatunde A. Ogunnaike ◽  
...  
Keyword(s):  
Vapor Transport ◽  
Vapor Transport Deposition

scholarly journals Vapor Transport Deposition of Methylammonium Iodide for Perovskite Solar Cells

2021 ◽  
Author(s):  
Florent Sahli ◽  
Nathanaël Miaz ◽  
Niccolò Salsi ◽  
Cédric Bucher ◽  
Aymeric Schafflützel ◽  
...  
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Vapor Transport ◽  
Vapor Transport Deposition

scholarly journals Vapor transport deposition of Sb2Se3 thin films for photodetector application

2020 ◽  
Vol 10 (04) ◽  
pp. 2050016
Author(s):  
Sen Wen ◽  
Xingtian Yin ◽  
Haixia Xie ◽  
Yuxiao Guo ◽  
Jie Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Deposition Temperature ◽  
Optoelectronic Devices ◽  
Vapor Transport ◽  
Film Morphology ◽  
Maximum Value ◽  
Application Potential ◽  
Antimony Selenide ◽  
Vapor Transport Deposition

Antimony selenide is a promising semiconductor with great application potential in the fields of optoelectronic devices. In this work, the vapor transport deposition (VTD) method is employed to prepare Sb2Se3 films on substrates. The influence of deposition temperature, distance between the Sb2Se3 sources and substrate, and the deposition holding time on the film morphology is investigated in detail. The deposited Sb2Se3 thin film is employed to fabricate photodetector with a structure of ITO/SnO2/Sb2Se3/Au, where the spin-coated SnO2 film is used as the buffer layer. The device demonstrates relative high responsivity in the range of 300–1000[Formula: see text]nm with a maximum value of 312[Formula: see text]mA W[Formula: see text] at 750[Formula: see text]nm.

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