Electronic Properties of van der Waals Heterostructure of Black Phosphorus and MoS2

2018 ◽  
Vol 122 (12) ◽  
pp. 7027-7032 ◽  
Author(s):  
Kewei Tang ◽  
Weihong Qi ◽  
Yejun Li ◽  
Tianran Wang
Keyword(s):  
Electronic Properties ◽  
Van Der Waals ◽  
Black Phosphorus ◽  
Van Der Waals Heterostructure

Vertical strain and electric field tunable electronic properties of type-II band alignment C2N/InSe van der Waals heterostructure

2019 ◽  
Vol 716 ◽  
pp. 155-161 ◽  
Author(s):  
Khang D. Pham ◽  
Nguyen N. Hieu ◽  
Le M. Bui ◽  
Huynh V. Phuc ◽  
Bui D. Hoi ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Vertical Strain ◽  
Van Der Waals Heterostructure

Layered graphene/GaS van der Waals heterostructure: Controlling the electronic properties and Schottky barrier by vertical strain

2018 ◽  
Vol 113 (17) ◽  
pp. 171605 ◽  
Author(s):  
Khang D. Pham ◽  
Nguyen N. Hieu ◽  
Huynh V. Phuc ◽  
I. A. Fedorov ◽  
C. A. Duque ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Schottky Barrier ◽  
Van Der Waals ◽  
Vertical Strain ◽  
Van Der Waals Heterostructure

scholarly journals Adjusting the electronic properties and contact types of graphene/F-diamane-like C4F2 van der Waals heterostructure: a first principles study

RSC Advances ◽  
2021 ◽  
Vol 11 (60) ◽  
pp. 37981-37987
Author(s):  
Thi-Nga Do ◽  
Son-Tung Nguyen ◽  
Cuong Q. Nguyen
Keyword(s):  
Electronic Properties ◽  
Atomic Structure ◽  
First Principles ◽  
Van Der Waals ◽  
First Principles Study ◽  
Van Der Waals Heterostructure

We perform a first principles study to investigate the atomic structure, electronic properties and contact types of the graphene/F-diamane-like C4F2 heterostructure.

The strain effect on the electronic properties of the MoSSe/WSSe van der Waals heterostructure: a first-principles study

2020 ◽  
Vol 22 (9) ◽  
pp. 4946-4956 ◽  
Author(s):  
Wenyu Guo ◽  
Xun Ge ◽  
Shoutian Sun ◽  
Yiqun Xie ◽  
Xiang Ye
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
Van Der Waals ◽  
Strain Effect ◽  
Vertical Strain ◽  
First Principles Study ◽  
Van Der Waals Heterostructure ◽  
Vdw Heterostructure

The structural, mechanical and electronic properties of the MoSSe/WSSe van der Waals (vdW) heterostructure under various degrees of horizontal and vertical strain are systematically investigated based on first-principles methods.

Tailoring the structural and electronic properties of an SnSe2/MoS2 van der Waals heterostructure with an electric field and the insertion of a graphene sheet

2019 ◽  
Vol 21 (39) ◽  
pp. 22140-22148 ◽  
Author(s):  
Tuan V. Vu ◽  
Nguyen V. Hieu ◽  
Le T. P. Thao ◽  
Nguyen N. Hieu ◽  
Huynh V. Phuc ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Graphene Sheet ◽  
2D Materials ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Two Dimensional ◽  
Van Der Waals Heterostructure ◽  
Two Dimensional Materials ◽  
Structural And Electronic Properties

van der Waals heterostructures by stacking different two-dimensional materials are being considered as potential materials for nanoelectronic and optoelectronic devices because they can show the most potential advantages of individual 2D materials.

scholarly journals Epitaxial multilayers of alkanes on two-dimensional black phosphorus as passivating and electrically insulating nanostructures

Nanoscale ◽  
2019 ◽  
Vol 11 (37) ◽  
pp. 17252-17261 ◽  
Author(s):  
Margherita Bolognesi ◽  
Marco Brucale ◽  
Andrea Lorenzoni ◽  
Federico Prescimone ◽  
Salvatore Moschetto ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Black Phosphorus ◽  
Two Dimensional ◽  
Van Der Waals Heterostructure ◽  
Epitaxial Multilayers

Mechanically exfoliated 2D black phosphorus and solution casted tetracosane form a semiconductor/insulator, stable van der Waals heterostructure.

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