Onion-Structured Spherical MoS2 Nanoparticles Induced by Laser Ablation in Water and Liquid Droplets’ Radial Solidification/Oriented Growth Mechanism

2017 ◽  
Vol 121 (41) ◽  
pp. 23233-23239 ◽  
Author(s):  
Le Zhou ◽  
Hongwen Zhang ◽  
Haoming Bao ◽  
Guangqiang Liu ◽  
Yue Li ◽  
...  
2012 ◽  
Vol 1433 ◽  
Author(s):  
D. Carole ◽  
A. Vo-Ha ◽  
M. Lazar ◽  
N. Thierry-Jebali ◽  
D. Tournier ◽  
...  

ABSTRACTSince a few years, VLS transport is studied not only for homoepitaxial SiC growth but also for SiC selective epitaxial growth (SEG). In this approach, a stacking of silicon and aluminum layers is deposited on the substrate and patterns are created by photolithography. Upon melting, the Al-Si liquid droplets are fed by propane to obtain the SEG of p-doped SiC. In this work, the growth mechanisms were deeper investigated, in particular the influence of the carrier gas (H2 or Ar) and the growth temperature. SEG experiments showed higher growth rates than those measured in the standard configuration (nonselective growth). Moreover, the SiC layers exhibited step-bunched areas characteristic of liquid phase growth but also areas with morphological features due to a disruption of the step-bunching growth mode.


1991 ◽  
Vol 69 (4) ◽  
pp. 2405-2409 ◽  
Author(s):  
H. ‐U. Krebs ◽  
M. Kehlenbeck ◽  
M. Steins ◽  
V. Kupcik

1997 ◽  
Vol 482 ◽  
Author(s):  
Yun-Xin Li ◽  
L. Salamanca-Riba ◽  
K. Wongchotigul ◽  
P. Zhou ◽  
M. G. Spencer ◽  
...  

AbstractAIN films grown on sapphire by MOCVD with different V/IAR ratios were investigated by XRD, TEM and AFM. The AIN films show single crystalline character as well as columnar structure. The growth of AIN has three zones: (1) high-density nucleation layer (2) fine columnar growth and (3) grain merging and lateral growth. The films grown at intermediate V/III ratio have the maximum value of [0002] FWHM. When the V/HI ratio increases, the thickness of the nucleation zone and the film misorientation increase, but when the ratio is increased further, the nucleation zone decreases and the AIN film has a more highly oriented growth. These results suggest that the AIN films with optimum crystalline quality can be obtained by varying the V/III ratio during growth.


1994 ◽  
Vol 358 ◽  
Author(s):  
Hong Wu ◽  
R. D. Vispute ◽  
J. Narayan

ABSTRACTWe have investigated the formation of micron-sized single crystal dots of germanium by pulsed laser ablation. The laser ablation of a Ge target (KrF excimer laser λ=248 nm, pulse rate 10Hz, pulse duration 25x10−9 seconds, and energy 10J /cm2) results in the formation of micron and submicron liquid droplets which are ejected from the target. These droplets can be crystallized into single crystal dots on lattice-matched substrates by rapid liquid-phase recrystallization. We report the details of microstructure as a function of dot size. It is found that under these conditions, below a critical size (about 2μm), the dots are crystalline;above which dots become polycrystalline. We discuss the implications of the results in producing doped and undoped single-crystal quantum dots for device applications.


2010 ◽  
Vol 42 (6-7) ◽  
pp. 1284-1288 ◽  
Author(s):  
Y. Belaroussi ◽  
T. Kerdja ◽  
S. Malek

2020 ◽  
Vol 2 (9) ◽  
pp. 3991-4002 ◽  
Author(s):  
Niusha Lasemi ◽  
Christian Rentenberger ◽  
Gerhard Liedl ◽  
Dominik Eder

Femtosecond laser assisted formation of ultrafine-grained Si NPs with a high density of defects. This can correlate with significant thermal stresses on primary NPs, fast cooling of ejected liquid droplets and incomplete ripening processes.


2017 ◽  
Vol 423 ◽  
pp. 977-982 ◽  
Author(s):  
A.Og. Dikovska ◽  
D. Pallotti ◽  
S. Lettieri ◽  
G.B. Atanasova ◽  
G.V. Avdeev ◽  
...  

2008 ◽  
Vol 83 (6) ◽  
pp. 68005 ◽  
Author(s):  
P. M. Ossi ◽  
A. Bailini ◽  
O. Geszti ◽  
G. Radnóczi

2017 ◽  
Vol 26 (4) ◽  
pp. 045002 ◽  
Author(s):  
F Taccogna ◽  
M Dell’Aglio ◽  
M Rutigliano ◽  
G Valenza ◽  
A De Giacomo

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