Growth Mechanism and Structure of Ain Films Grown on Sapphire by MOCVD

1997 ◽  
Vol 482 ◽  
Author(s):  
Yun-Xin Li ◽  
L. Salamanca-Riba ◽  
K. Wongchotigul ◽  
P. Zhou ◽  
M. G. Spencer ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Columnar Structure ◽  
Crystalline Quality ◽  
Lateral Growth ◽  
Oriented Growth ◽  
Columnar Growth ◽  
Nucleation Layer ◽  
Single Crystalline ◽  
Maximum Value ◽  
Layer 2

AbstractAIN films grown on sapphire by MOCVD with different V/IAR ratios were investigated by XRD, TEM and AFM. The AIN films show single crystalline character as well as columnar structure. The growth of AIN has three zones: (1) high-density nucleation layer (2) fine columnar growth and (3) grain merging and lateral growth. The films grown at intermediate V/III ratio have the maximum value of [0002] FWHM. When the V/HI ratio increases, the thickness of the nucleation zone and the film misorientation increase, but when the ratio is increased further, the nucleation zone decreases and the AIN film has a more highly oriented growth. These results suggest that the AIN films with optimum crystalline quality can be obtained by varying the V/III ratio during growth.

scholarly journals Correction to: Growth mechanism identification of sputtered single crystalline bismuth nanowire

2019 ◽  
Vol 9 (8) ◽  
pp. 2103-2103
Author(s):  
Haiyang Hong ◽  
Lu Zhang ◽  
Chunyu Yu ◽  
Ziqi Zhang ◽  
Cheng Li ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Single Crystalline ◽  
Bismuth Nanowire

Large-Scale Synthesis of In2O3 Nanowires and Their Characterization

2005 ◽  
Vol 475-479 ◽  
pp. 3513-3516 ◽  
Author(s):  
Fan Hao Zeng ◽  
X. Zhang
Keyword(s):  
Growth Mechanism ◽  
Large Scale ◽  
Single Crystalline ◽  
Pure Indium ◽  
Sem And Tem ◽  
Large Scale Synthesis

Large-scale single-crystalline In2O3 nanowires were successfully synthesized by simply evaporating the pure indium at 950ı. The as-synthesized products, characterized by XRD, SEM, and TEM, were pure, structurally uniform, and single crystalline with typical diameters of 10 to 100 nanometers and lengths of up to a few hundreds of micrometers. The growth mechanism of the nanowires also was discussed.

Structural Study of SIC/AIN Bilayers and Trilayers on SI and 6H-SIC

1994 ◽  
Vol 339 ◽  
Author(s):  
D. Prasad Beesabathina ◽  
K. Fekade ◽  
K. Wongchotigul ◽  
M. G. Spencer ◽  
L. Salamanca-Riba
Keyword(s):  
Electron Microscopy ◽  
Amorphous Layer ◽  
Growth Morphology ◽  
Epitaxial Relationship ◽  
Nucleation Layer ◽  
Single Crystalline ◽  
Bulk Layer ◽  
Transmission Electron ◽  
Columnar Grains ◽  
Lattice Images

ABSTRACTThe growth morphology and microstructure of SiC/AlN/6H-SiC, SiC/AlN/SiC/Si, and SiC/AlN/Si heterostructures grown by LPCVD were studied using transmission electron microscopy. The SiC/AIN bilayers grown on 6H-SiC substrates were single crystalline and comprised of 3C-SiC and 2H-AlN. The epitaxial relationship between 2H-AlN and 6H-SiC is [0001]AlN//[0001]SiC. The SiC/AlN/SiC trilayers and the SiC/AIN bilayer grown on (001)Si were composed of 3H-SiC and 2H-AlN. However, the 2H-AlN layer was polycrystalline even though the (001)3C-SiC was single crystalline. The preferred orientation of the AlN layers in SiC/AlN/SiC/Si and SiC/AlN/Si are [0112] and [0002], respectively. The AlN/3C-SiC interface is relatively sharp compared to the AIN/Si interface in which an amorphous layer close to the interface was observed. In general, the polycrystalline AlN structure has two distinct layers: (1) nucleation layer and (2) bulk layer. High resolution lattice images of the polycrystalline AlN showed amorphous areas and small misoriented crystallites in the nucleation layer. The bulk layer consists of preferentially oriented large columnar grains.

Crystalline quality improvement of face-to-face annealed MOVPE-grown AlN on vicinal sapphire substrate with sputtered nucleation layer

2020 ◽  
Vol 545 ◽  
pp. 125722
Author(s):  
Shigeyuki Kuboya ◽  
Kenjiro Uesugi ◽  
Kanako Shojiki ◽  
Yuta Tezen ◽  
Kenji Norimatsu ◽  
...  
Keyword(s):  
Quality Improvement ◽  
Sapphire Substrate ◽  
Crystalline Quality ◽  
Nucleation Layer ◽  
Face To Face

Bi- and Uniaxially Oriented Growth and Plasmon Resonance Properties of Anisotropic Ag Nanoparticles on Single Crystalline TiO2 Surfaces

2009 ◽  
Vol 113 (12) ◽  
pp. 4758-4762 ◽  
Author(s):  
Emiko Kazuma ◽  
Kazuki Matsubara ◽  
K. Lance Kelly ◽  
Nobuyuki Sakai ◽  
Tetsu Tatsuma
Keyword(s):  
Plasmon Resonance ◽  
Ag Nanoparticles ◽  
Oriented Growth ◽  
Single Crystalline ◽  
Resonance Properties
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