Study of diamond thin‐film growth mechanism in a filament‐assisted excimer laser ablation system

1994 ◽  
Vol 76 (12) ◽  
pp. 8113-8116 ◽  
Author(s):  
H. Chen ◽  
N. Maffei ◽  
R. H. Prince
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Growth Mechanism ◽  
Film Growth ◽  
Thin Film Growth ◽  
Excimer Laser Ablation ◽  
Diamond Thin Film

scholarly journals MgO Thin-Film Growth on Si(100) by Excimer Laser Ablation.

Shinku ◽  
1993 ◽  
Vol 36 (3) ◽  
pp. 219-222
Author(s):  
Satoru KANEKO ◽  
Seishiro OHYA ◽  
Ken KOBAYASHI ◽  
Shiro KARASAWA
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Film Growth ◽  
Thin Film Growth ◽  
Excimer Laser Ablation

Investigating the role of hydrogen in ultra-nanocrystalline diamond thin film growth

2006 ◽  
Vol 18 (32) ◽  
pp. S1771-S1776 ◽  
Author(s):  
James Birrell ◽  
J E Gerbi ◽  
O A Auciello ◽  
J A Carlisle
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Nanocrystalline Diamond ◽  
Thin Film Growth ◽  
Diamond Thin Film

Rotating-Compensator Multichannel Ellipsometry: Applications in Process Development for Nanocrystalline Diamond Thin Films

1997 ◽  
Vol 502 ◽  
Author(s):  
R. W. Collins ◽  
Joungchel Lee ◽  
P. I. Rovira ◽  
Ilsin An
Keyword(s):  
Thin Film ◽  
Light Beam ◽  
Time Evolution ◽  
Film Growth ◽  
Nanocrystalline Diamond ◽  
Thin Film Growth ◽  
Degree Of Polarization ◽  
S Wave ◽  
Diamond Thin Film ◽  
New Instrument

ABSTRACTA multichannel spectroscopic ellipsometer based on the rotating-compensator principle was developed and applied to characterize nanocrystalline diamond thin film growth processes by plasma-enhanced chemical vapor deposition (PECVD). With the newly-designed instrument, a time resolution of 32 ms is possible for spectra (1.5˜4.0 eV) in the Stokes vector of the light beam reflected from the surface of the growing film. Several advantages of the rotating-compensator over the simpler rotating-polarizer multichannel ellipsometer design are demonstrated here for diamond thin film growth. These include the ability to: (i) resolve the sign ambiguity in the p–s wave phase-shift difference Δ, (ii) obtain accurate Δ values for low ellipticity polarization states, and (iii) deduce spectra in the degree of polarization of the light beam reflected from the film/substrate. The degree of polarization has been applied to characterize the time evolution of light scattering during the nucleation of the diamond, as well as the time evolution of thickness non-uniformity over the probed area of the growing film. In this paper, a brief description of calibration and data reduction for the new instrument is also provided.

scholarly journals From flat to tilted: gradual interfaces in organic thin film growth

Nanoscale ◽  
2020 ◽  
Vol 12 (6) ◽  
pp. 3834-3845 ◽  
Author(s):  
Laura Katharina Scarbath-Evers ◽  
René Hammer ◽  
Dorothea Golze ◽  
Martin Brehm ◽  
Daniel Sebastiani ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Growth Mechanism ◽  
Film Growth ◽  
Thin Film Growth ◽  
Organic Thin Film ◽  
Interfacial Layers ◽  
Bulk Structure

An unexpected growth mechanism for organic semiconductors on gold where the molecules approach their bulk structure over several interfacial layers.

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