Angular distribution of liquid droplets during the laser ablation of silicon target

2010 ◽  
Vol 42 (6-7) ◽  
pp. 1284-1288 ◽  
Author(s):  
Y. Belaroussi ◽  
T. Kerdja ◽  
S. Malek
Keyword(s):  
Angular Distribution ◽  
Laser Ablation ◽  
Liquid Droplets ◽  
Silicon Target

Deposition of Epitaxially Oriented Films of Cubic SiC on Silicon by Laser Ablation of Elemental Targets.

1994 ◽  
Vol 339 ◽  
Author(s):  
L. Rimai ◽  
R. Ager ◽  
W. H. Weber ◽  
J. Hangas ◽  
B. D. Poindexter
Keyword(s):  
Silicon Carbide ◽  
Laser Ablation ◽  
Crystalline Silicon ◽  
Epitaxial Films ◽  
Ablation Plume ◽  
Silicon Substrates ◽  
Pure Silicon ◽  
Silicon Target ◽  
Oriented Films ◽  
Pure Carbon

ABSTRACTSilicon carbide films are grown epitaxially on crystalline silicon substrates heated above 1000 °C, by laser ablation of pure carbon targets to thicknesses between 300 and 400 nm. These films grow on top of the silicon substrate from the carbon in the ablation plume and from the silicon of the substrate. By using a method of alternate ablation of a pure carbon and a pure silicon target, similar epitaxial films can be grown to thicknesses in excess of 1 μm with part of the silicon being supplied by the ablation plume of the silicon target.

Effect of silicon target porosity on laser ablation threshold: molecular dynamics simulation

2021 ◽  
Vol 18 (7) ◽  
pp. 076001
Author(s):  
A Yu Kharin ◽  
M S Grigoryeva ◽  
I N Zavestovskaya ◽  
V Yu Timoshenko
Keyword(s):  
Molecular Dynamics ◽  
Laser Ablation ◽  
Molecular Dynamics Simulation ◽  
Ablation Threshold ◽  
Dynamics Simulation ◽  
Silicon Target

scholarly journals Tailoring Photoluminescence from Si-Based Nanocrystals Prepared by Pulsed Laser Ablation in He-N2 Gas Mixtures

Molecules ◽  
2020 ◽  
Vol 25 (3) ◽  
pp. 440 ◽  
Author(s):  
Anastasiya A. Fronya ◽  
Sergey V. Antonenko ◽  
Alexander Yu. Kharin ◽  
Andrei V. Muratov ◽  
Yury A. Aleschenko ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Near Infrared ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Gas Mixtures ◽  
Si Nanocrystals ◽  
Silicon Target ◽  
Silicon Suboxide ◽  
Pl Emission ◽  
Excitonic States

Using methods of pulsed laser ablation from a silicon target in helium (He)-nitrogen (N2) gas mixtures maintained at reduced pressures (0.5–5 Torr), we fabricated substrate-supported silicon (Si) nanocrystal-based films exhibiting a strong photoluminescence (PL) emission, which depended on the He/N2 ratio. We show that, in the case of ablation in pure He gas, Si nanocrystals exhibit PL bands centered in the “red - near infrared” (maximum at 760 nm) and “green” (centered at 550 nm) spectral regions, which can be attributed to quantum-confined excitonic states in small Si nanocrystals and to local electronic states in amorphous silicon suboxide (a-SiOx) coating, respectively, while the addition of N2 leads to the generation of an intense “green-yellow” PL band centered at 580 nm. The origin of the latter band is attributed to a radiative recombination in amorphous oxynitride (a-SiNxOy) coating of Si nanocrystals. PL transients of Si nanocrystals with SiOx and a-SiNxOy coatings demonstrate nonexponential decays in the micro- and submicrosecond time scales with rates depending on nitrogen content in the mixture. After milling by ultrasound and dispersing in water, Si nanocrystals can be used as efficient non-toxic markers for bioimaging, while the observed spectral tailoring effect makes possible an adjustment of the PL emission of such markers to a concrete bioimaging task.

Formation of Submicron Single Crystal Particles and Dots by Laser Ablation

1994 ◽  
Vol 358 ◽  
Author(s):  
Hong Wu ◽  
R. D. Vispute ◽  
J. Narayan
Keyword(s):  
Quantum Dots ◽  
Laser Ablation ◽  
Single Crystal ◽  
Critical Size ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Liquid Droplets ◽  
Device Applications ◽  
Krf Excimer Laser ◽  
Lattice Matched

ABSTRACTWe have investigated the formation of micron-sized single crystal dots of germanium by pulsed laser ablation. The laser ablation of a Ge target (KrF excimer laser λ=248 nm, pulse rate 10Hz, pulse duration 25x10−9 seconds, and energy 10J /cm2) results in the formation of micron and submicron liquid droplets which are ejected from the target. These droplets can be crystallized into single crystal dots on lattice-matched substrates by rapid liquid-phase recrystallization. We report the details of microstructure as a function of dot size. It is found that under these conditions, below a critical size (about 2μm), the dots are crystalline;above which dots become polycrystalline. We discuss the implications of the results in producing doped and undoped single-crystal quantum dots for device applications.

scholarly journals The influence of the fluid nature on femtosecond laser ablation properties of a SiO2/Si target and synthesis of ultrafine-grained Si nanoparticles

2020 ◽  
Vol 2 (9) ◽  
pp. 3991-4002 ◽  
Author(s):  
Niusha Lasemi ◽  
Christian Rentenberger ◽  
Gerhard Liedl ◽  
Dominik Eder
Keyword(s):  
Laser Ablation ◽  
Femtosecond Laser ◽  
Thermal Stresses ◽  
Femtosecond Laser Ablation ◽  
High Density ◽  
Liquid Droplets ◽  
Ultrafine Grained ◽  
Si Nanoparticles ◽  
Fast Cooling

Femtosecond laser assisted formation of ultrafine-grained Si NPs with a high density of defects. This can correlate with significant thermal stresses on primary NPs, fast cooling of ejected liquid droplets and incomplete ripening processes.

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