In Situ Fabricated Cu–Ag Nanoparticle-Embedded Polymer Thin Film as an Efficient Broad Spectrum SERS Substrate

2017 ◽  
Vol 121 (2) ◽  
pp. 1339-1348 ◽  
Author(s):  
V. Kesava Rao ◽  
Pankaj Ghildiyal ◽  
T. P. Radhakrishnan
2008 ◽  
Vol 1146 ◽  
Author(s):  
Amitabha Sarkar ◽  
Tapani Viitala ◽  
Tino Hofmann ◽  
Tom E. Tiwald ◽  
John A. Woollam ◽  
...  

AbstractThe change of the visible light ellipsometric parameters and mechanical harmonic frequencies of a hydrophobic gold surface attached to a quartz crystal are measured in aqueous solution during deposition of synperonic polymer thin film. The ellipsometry data reveal the amount of polymer mass attached to the surface, while the mechanical resonance shifts are caused by the total mass attached to the surface. Analysis of the combined ellipsometry and quartz crystal microbalance data reveal that the polymer thin film has a high water content, and we determine in-situ, for the first time, the porosity, or the water content, of a polymer thin film in aqueous solution.


Author(s):  
K. Barmak

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.


Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).


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