Band Structure Engineering: Insights from Defects, Band Gap, and Electron Mobility, from Study of Magnesium Tantalate

2016 ◽  
Vol 120 (13) ◽  
pp. 6930-6937 ◽  
Author(s):  
Taifeng Liu ◽  
Michel Dupuis ◽  
Can Li
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Electron Mobility ◽  
Structure Engineering

Band structure engineering of monolayer MoS2: a charge compensated codoping strategy

RSC Advances ◽  
2015 ◽  
Vol 5 (11) ◽  
pp. 7944-7952 ◽  
Author(s):  
Hui Wan ◽  
Liang Xu ◽  
Wei-Qing Huang ◽  
Jia-Hui Zhou ◽  
Chao-Ni He ◽  
...  
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Monolayer Mos2 ◽  
A Charge ◽  
Structure Engineering ◽  
Solar Applications

The monolayer MoS2, possessing an advantage over graphene in that it exhibits a band gap whose magnitude is appropriate for solar applications, has attracted increasing attention because of its possible use as a photocatalyst.

Graphene/g-C3N4 bilayer: considerable band gap opening and effective band structure engineering

2014 ◽  
Vol 16 (9) ◽  
pp. 4230 ◽  
Author(s):  
Xinru Li ◽  
Ying Dai ◽  
Yandong Ma ◽  
Shenghao Han ◽  
Baibiao Huang
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Gap Opening ◽  
Structure Engineering

scholarly journals Band structure engineering for low band gap polymers containing thienopyrazine

2012 ◽  
Vol 22 (15) ◽  
pp. 7331 ◽  
Author(s):  
Chi-Yang Chao ◽  
Chung-Hsiang Chao ◽  
Lung-Pin Chen ◽  
Ying-Chieh Hung ◽  
Shiang-Tai Lin ◽  
...  
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Low Band Gap ◽  
Low Band Gap Polymers ◽  
Structure Engineering

scholarly journals Band structure engineering of borophane by first principles calculations

RSC Advances ◽  
2017 ◽  
Vol 7 (75) ◽  
pp. 47746-47752 ◽  
Author(s):  
Zhi-Qiang Wang ◽  
Tie-Yu Lü ◽  
Hui-Qiong Wang ◽  
Yuan Ping Feng ◽  
Jin-Cheng Zheng
Keyword(s):  
Band Structure ◽  
Shear Strain ◽  
Band Gap ◽  
First Principles ◽  
First Principles Calculations ◽  
Structure Engineering

Applying shear strain is an effective approach to open the band gap for W- and C-borophane.

Enhanced thermoelectric properties of Ga-doped In2O3 ceramics via synergistic band gap engineering and phonon suppression

2015 ◽  
Vol 17 (17) ◽  
pp. 11229-11233 ◽  
Author(s):  
Yong Liu ◽  
Wei Xu ◽  
Da-Bo Liu ◽  
Meijuan Yu ◽  
Yuan-Hua Lin ◽  
...  
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Band Gap Engineering ◽  
Structure Engineering

The performance of Ge doped In2O3 thermoelectric materials is enhanced via band structure engineering and phonon suppression.

scholarly journals Improving the ZT of SnTe using electronic structure engineering: unusual behavior of Bi dopant in the presence of Pb as a co-dopant

2021 ◽  
Vol 2 (19) ◽  
pp. 6267-6271 ◽  
Author(s):  
U. Sandhya Shenoy ◽  
D. Krishna Bhat
Keyword(s):  
Electronic Structure ◽  
Synergistic Effect ◽  
Band Gap ◽  
Resonance Level ◽  
Unusual Behavior ◽  
Level Increase ◽  
Structure Engineering

Extraordinary tuning of electronic structure of SnTe by Bi in the presence of Pb as a co-adjuvant dopant. Synergistic effect of resonance level, increase in the band gap, valence and conduction sub-bands convergence leads to enhanced TE performance.

Band structure engineering of van der Waals heterostructures using ferroelectric clamped sandwich structures

2021 ◽  
Vol 103 (12) ◽  
Author(s):  
Hao Tian ◽  
Changsong Xu ◽  
Xu Li ◽  
Yurong Yang ◽  
L. Bellaiche ◽  
...  
Keyword(s):  
Band Structure ◽  
Sandwich Structures ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Structure Engineering

Electronic structure engineering of tin telluride through co-doping of bismuth and indium for high performance thermoelectrics: a synergistic effect leading to a record high room temperature ZT in tin telluride

2019 ◽  
Vol 7 (16) ◽  
pp. 4817-4821 ◽  
Author(s):  
U. Sandhya Shenoy ◽  
D. Krishna Bhat
Keyword(s):  
Electronic Structure ◽  
Synergistic Effect ◽  
Band Gap ◽  
High Performance ◽  
Room Temperature ◽  
Band Offset ◽  
Valence Band Offset ◽  
Co Doping ◽  
Tin Telluride ◽  
Structure Engineering

Resonance states due to Bi and In co-doping, band gap enlargement, and a reduced valence-band offset in SnTe lead to a record high room-temperature ZT.

scholarly journals Band structure engineering in gallium sulfide nanostructures

2021 ◽  
Vol 127 (2) ◽  
Author(s):  
M. Mosaferi ◽  
I. Abdolhosseini Sarsari ◽  
M. Alaei
Keyword(s):  
Band Structure ◽  
Gallium Sulfide ◽  
Structure Engineering
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