Enhanced thermoelectric properties of Ga-doped In2O3 ceramics via synergistic band gap engineering and phonon suppression

2015 ◽  
Vol 17 (17) ◽  
pp. 11229-11233 ◽  
Author(s):  
Yong Liu ◽  
Wei Xu ◽  
Da-Bo Liu ◽  
Meijuan Yu ◽  
Yuan-Hua Lin ◽  
...  
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Band Gap Engineering ◽  
Structure Engineering

The performance of Ge doped In2O3 thermoelectric materials is enhanced via band structure engineering and phonon suppression.

Effect of Electron-Phonon Coupling on Transport Properties of Monolayers of ZrS2, BiI3 and PbI2: A thermoelectric Perspective

2021 ◽  
Author(s):  
Gautam Sharma ◽  
Vineet Kumar Pandey ◽  
Shouvik Datta ◽  
Prasenjit Ghosh
Keyword(s):  
Relaxation Time ◽  
Band Structure ◽  
Transport Properties ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Waste Heat ◽  
Transport Coefficients ◽  
Electrical Energy ◽  
Phonon Coupling ◽  
Electron Phonon Coupling

Thermoelectric materials are used for conversion of waste heat to electrical energy. The transport coefficients that determine their thermoelectric properties depend on the band structure and the relaxation time of...

Band Structure and Thermoelectric Properties of Ni(x)Zn(1-x)Fe2O4

2021 ◽  
Vol 317 ◽  
pp. 28-34
Author(s):  
Joon Hoong Lim
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Band Structure ◽  
Seebeck Coefficient ◽  
Band Gap ◽  
Thermoelectric Properties ◽  
Xrd Analysis ◽  
Valence Band Maximum ◽  
Solid State Method ◽  
Ni Content

Thermoelectric materials has made a great potential in sustainable energy industries, which enable the energy conversion from heat to electricity. The band structure and thermoelectric properties of Ni(x)Zn(1-x)Fe2O4 have been investigated. The bulk pellets were prepared from analytical grade ZnO, NiO and Fe2O3 powder using solid-state method. It was possible to obtain high thermoelectric properties of Ni(x)Zn(1-x)Fe2O4 by controlling the ratios of dopants and the sintering temperature. XRD analysis showed that the fabricated samples have a single phase formation of cubic spinel structure. The thermoelectric properties of Ni(x)Zn(1-x)Fe2O4 pellets improved with increasing Ni. The electrical conductivity of Ni(x)Zn(1-x)Fe2O4 pellets decreased with increasing Ni content. The electrical conductivity of Ni(x)Zn(1-x)Fe2O4 (x = 0.0) is (0.515 x10-3 Scm-1). The band structure shows that ZnxCu1-xFe2O4 is an indirect band gap material with the valence band maximum (VBM) at M and conduction band minimum (CBM) at A. The band gap of Ni(x)Zn(1-x)Fe2O4 increased with increasing Ni content. The increasing band gap correlated with the lower electrical conductivity. The thermal conductivity of Ni(x)Zn(1-x)Fe2O4 pellets decreased with increasing Ni content. The presence of Ni served to decrease thermal conductivity by 8 Wm-1K-1 over pure samples. The magnitude of the Seebeck coefficient for Ni(x)Zn(1-x)Fe2O4 pellets increased with increasing amounts of Ni. The figure of merit for Ni(x)Zn(1-x)Fe2O4 pellets and thin films was improved by increasing Ni due to its high Seebeck coefficient and low thermal conductivity.

Resonance levels in GeTe thermoelectrics: zinc as a new multifaceted dopant

2020 ◽  
Vol 44 (41) ◽  
pp. 17664-17670
Author(s):  
D. Krishna Bhat ◽  
U. Sandhya Shenoy
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Thermoelectric Properties ◽  
Resonance States ◽  
Structure Engineering

Electronic-structure engineering of GeTe:Zn doping enhances thermoelectric properties via synergy of resonance states, increase in band gap and hyper-convergence.

Band structure engineering of monolayer MoS2: a charge compensated codoping strategy

RSC Advances ◽  
2015 ◽  
Vol 5 (11) ◽  
pp. 7944-7952 ◽  
Author(s):  
Hui Wan ◽  
Liang Xu ◽  
Wei-Qing Huang ◽  
Jia-Hui Zhou ◽  
Chao-Ni He ◽  
...  
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Monolayer Mos2 ◽  
A Charge ◽  
Structure Engineering ◽  
Solar Applications

The monolayer MoS2, possessing an advantage over graphene in that it exhibits a band gap whose magnitude is appropriate for solar applications, has attracted increasing attention because of its possible use as a photocatalyst.

Electronic Structure and Thermoelectric Properties of AxMo3Sb5Te2

2003 ◽  
Vol 793 ◽  
Author(s):  
Navid Soheilnia ◽  
Holger Kleinke
Keyword(s):  
Thermal Conductivity ◽  
Electronic Structure ◽  
Band Structure ◽  
Band Gap ◽  
Thermoelectric Properties ◽  
Gap Size ◽  
Formula Unit ◽  
Chemically Modified ◽  
Thermoelectric Energy ◽  
Attractive Candidate

ABSTRACTMo3Sb7 may be chemically modified to become semiconducting by replacing two Sb atoms with two Te atoms (per formula unit). This material may be an attractive candidate for the thermoelectric energy conversion, as its thermal conductivity may be lowered by creating the rattling effect upon intercalation of small cations, and its band structure may be tailored, i.e. the band gap size modified. The higher the Te content and the higher the cation amount, the smaller is the band gap, which can virtually reach any value below 0.5 eV.

scholarly journals Band Structure Engineering and Thermoelectric Properties of Charge-Compensated Filled Skutterudites

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Xiaoya Shi ◽  
Jiong Yang ◽  
Lijun Wu ◽  
James R. Salvador ◽  
Cheng Zhang ◽  
...  
Keyword(s):  
Band Structure ◽  
Thermoelectric Properties ◽  
Filled Skutterudites ◽  
Structure Engineering

Exploring Complex Chalcogenides for Thermoelectric Applications

2000 ◽  
Vol 626 ◽  
Author(s):  
Ying C. Wang ◽  
Francis J. DiSalvo
Keyword(s):  
Band Structure ◽  
Physical Properties ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Crystal Symmetry ◽  
Synthesis And Characterization ◽  
Conduction Bands ◽  
Valence Bands ◽  
Binary Compounds

ABSTRACTOur research on ternary / quaternary chalcogenides for thermoelectric applications has lead to the identification of new interesting compounds and better understanding of the chemistry and physical properties of complex chalcogenides. The chemical, geometric, electronic diversity and flexibility has been well demonstrated in BaBiSe3 and Sr4Bi6Se13 type compounds. This presents both a challenge and more opportunity in controlling and optimizing the thermoelectric properties of these complex chalcogenides, compared with elemental and binary compounds. The importance of multivalley band structure in thermoelectric materials is emphasized. Only compounds with high crystal symmetry have the possibility of having a large number of degenerate valleys in the conduction bands or peaks in the valence bands, respectively. However, most of the complex chalcogenides crystallize in low crystal symmetry. An Edisonian method of exploratory synthesis and characterization may be the working approach to find good thermoelectric materials with ZT higher than 4.

Graphene/g-C3N4 bilayer: considerable band gap opening and effective band structure engineering

2014 ◽  
Vol 16 (9) ◽  
pp. 4230 ◽  
Author(s):  
Xinru Li ◽  
Ying Dai ◽  
Yandong Ma ◽  
Shenghao Han ◽  
Baibiao Huang
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Gap Opening ◽  
Structure Engineering

Tetrahedrites as thermoelectric materials: an overview

2015 ◽  
Vol 3 (48) ◽  
pp. 12364-12378 ◽  
Author(s):  
R. Chetty ◽  
A. Bali ◽  
R. C. Mallik
Keyword(s):  
Crystal Structure ◽  
Band Structure ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Chemical Bonding ◽  
Electronic Band Structure ◽  
Electronic Band

This review discusses about the crystal structure, chemical bonding, and the electronic band structure of tetrahedrite materials. Also, this review outlines the effect of different doping elements on the thermoelectric properties of tetrahedrite materials.

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