Radical-Enhanced Atomic Layer Deposition of a Tungsten Oxide Film with the Tunable Oxygen Vacancy Concentration

2020 ◽  
Vol 124 (33) ◽  
pp. 18156-18164 ◽  
Author(s):  
Roman I. Romanov ◽  
Maxim G. Kozodaev ◽  
Yury Y. Lebedinskii ◽  
Timofey V. Perevalov ◽  
Aleksandr S. Slavich ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Atomic Layer Deposition ◽  
Oxide Film ◽  
Tungsten Oxide ◽  
Vacancy Concentration ◽  
Atomic Layer ◽  
Oxygen Vacancy Concentration ◽  
Layer Deposition ◽  
Tungsten Oxide Film

Optimization of oxygen vacancy concentration in HfO2/HfOx bilayer-structured ultrathin memristors by atomic layer deposition and their biological synaptic behavior

2020 ◽  
Vol 8 (36) ◽  
pp. 12478-12484
Author(s):  
Chang Liu ◽  
Chun-Chen Zhang ◽  
Yan-Qiang Cao ◽  
Di Wu ◽  
Peng Wang ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Atomic Layer Deposition ◽  
Vacancy Concentration ◽  
Atomic Layer ◽  
Oxygen Vacancy Concentration ◽  
Synaptic Functions ◽  
Layer Deposition

Tuning the oxygen vacancy concentration in HfO2/HfOx bilayer-structured ultrathin memristors to simulate synaptic functions.

Atomic Layer Deposition of Platinum Nanoparticles on Titanium Oxide and Tungsten Oxide Using Platinum(II) Hexafluoroacetylacetonate and Formalin as the Reactants

2014 ◽  
Vol 118 (17) ◽  
pp. 8960-8970 ◽  
Author(s):  
Virginia R. Anderson ◽  
Noemi Leick ◽  
Joel W. Clancey ◽  
Katherine E. Hurst ◽  
Kim M. Jones ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Tungsten Oxide ◽  
Titanium Oxide ◽  
Platinum Nanoparticles ◽  
Atomic Layer ◽  
Layer Deposition ◽  
And Tungsten

Water Splitting by Tungsten Oxide Prepared by Atomic Layer Deposition and Decorated with an Oxygen-Evolving Catalyst

2010 ◽  
Vol 50 (2) ◽  
pp. 499-502 ◽  
Author(s):  
Rui Liu ◽  
Yongjing Lin ◽  
Lien-Yang Chou ◽  
Stafford W. Sheehan ◽  
Wangshu He ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Tungsten Oxide ◽  
Water Splitting ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Oxygen Evolving

Water Splitting by Tungsten Oxide Prepared by Atomic Layer Deposition and Decorated with an Oxygen-Evolving Catalyst

2010 ◽  
Vol 123 (2) ◽  
pp. 519-522 ◽  
Author(s):  
Rui Liu ◽  
Yongjing Lin ◽  
Lien-Yang Chou ◽  
Stafford W. Sheehan ◽  
Wangshu He ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Tungsten Oxide ◽  
Water Splitting ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Oxygen Evolving

Engineering the Growth of MoS2via Atomic Layer Deposition of Molybdenum Oxide Film Precursor

2016 ◽  
Vol 2 (10) ◽  
pp. 1600330 ◽  
Author(s):  
Christian Martella ◽  
Pierpaolo Melloni ◽  
Eugenio Cinquanta ◽  
Elena Cianci ◽  
Mario Alia ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Oxide Film ◽  
Molybdenum Oxide ◽  
Atomic Layer ◽  
Layer Deposition

Effect of Al2O3 Capping Layer in ZnO TFT Fabricated by Atomic Layer Deposition

2013 ◽  
Vol 658 ◽  
pp. 108-111
Author(s):  
Kwang Seok Jeong ◽  
Yu Mi Kim ◽  
Ho Jin Yun ◽  
Seung Dong Yang ◽  
Sang Youl Lee ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Atomic Layer Deposition ◽  
Layer Thickness ◽  
Atomic Layer ◽  
Zno Films ◽  
Zno Film ◽  
Capping Layer ◽  
Layer Deposition ◽  
Metallic Conduction ◽  
Conduction Behavior

In this paper, the electrical and physical analysis is carried out to investigate the effect of Al2O3 capping layer on ZnO film using atomic layer deposition. ZnO TFTs shows the metallic conduction behavior as Al2O3 capping layer thickness increases. From SIMS analysis, it is found out that the diffusion of Al into ZnO film is enhanced according to Al2O3 capping layer thickness. Moreover, the defects related to oxygen such as oxygen vacancy increase from XPS analysis and ZnO films reveal less compressive stress by substitution of Zn with Al form XRD analysis. That is, the metallic conduction behavior of ZnO TFTs with Al2O3 capping layer can be explained due to increase in the carrier concentration in ZnO channel layer from oxygen vacancy and substitution of Zn with Al.

scholarly journals Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector

RSC Advances ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 87-90 ◽  
Author(s):  
Kuan-Yin Chen ◽  
Sheng-Po Chang ◽  
Chih-hung Lin
Keyword(s):  
Oxygen Vacancy ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Tungsten Oxide ◽  
Vacancy Concentration ◽  
Radio Frequency Magnetron ◽  
Oxygen Vacancy Concentration ◽  
Radio Frequency Magnetron Sputtering ◽  
Uv Photodetector ◽  
Effect Of Oxygen

An indium tungsten oxide (IWO) ultraviolet (UV) photodetector was fabricated with radio frequency magnetron sputtering.

Sign in / Sign up

Export Citation Format

Share Document