Experimental investigations of the bismuth oxide film grown by atomic layer deposition using triphenyl bismuth

2017 ◽  
Vol 622 ◽  
pp. 65-70 ◽  
Author(s):  
Q. Qiao ◽  
Y.W. Li ◽  
J.Z. Zhang ◽  
Z.G. Hu ◽  
J.H. Chu
Keyword(s):  
Atomic Layer Deposition ◽  
Oxide Film ◽  
Bismuth Oxide ◽  
Atomic Layer ◽  
Experimental Investigations ◽  
Layer Deposition

Engineering the Growth of MoS2via Atomic Layer Deposition of Molybdenum Oxide Film Precursor

2016 ◽  
Vol 2 (10) ◽  
pp. 1600330 ◽  
Author(s):  
Christian Martella ◽  
Pierpaolo Melloni ◽  
Eugenio Cinquanta ◽  
Elena Cianci ◽  
Mario Alia ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Oxide Film ◽  
Molybdenum Oxide ◽  
Atomic Layer ◽  
Layer Deposition

Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers

2016 ◽  
Vol 611 ◽  
pp. 78-87 ◽  
Author(s):  
Manjunath Puttaswamy ◽  
Marko Vehkamäki ◽  
Kaupo Kukli ◽  
Mukesh Chandra Dimri ◽  
Marianna Kemell ◽  
...  
Keyword(s):  
Thin Films ◽  
Iron Oxide ◽  
Atomic Layer Deposition ◽  
Bismuth Oxide ◽  
Atomic Layer ◽  
Bismuth Iron Oxide ◽  
Oxide Thin Films ◽  
Oxide Layers ◽  
Layer Deposition

Atomic layer deposition of bismuth oxide using Bi(OCMe2iPr)3 and H2O

2014 ◽  
Vol 32 (1) ◽  
pp. 01A113 ◽  
Author(s):  
Dustin Z. Austin ◽  
Derryl Allman ◽  
David Price ◽  
Sallie Hose ◽  
Mark Saly ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Bismuth Oxide ◽  
Atomic Layer ◽  
Layer Deposition

Experimental Study of Process Emissions From Atomic Layer Deposition of Al2O3 Under Various Temperatures and Purge Time

2017 ◽  
Vol 139 (5) ◽  
Author(s):  
Lulu Ma ◽  
Dongqing Pan ◽  
Yuanyuan Xie ◽  
Fenfen Wang ◽  
Chris Yuan
Keyword(s):  
Atomic Layer Deposition ◽  
Gas Phase ◽  
Environmental Sustainability ◽  
Atomic Layer ◽  
Experimental Investigations ◽  
Phase Mixing ◽  
Sustainability Performance ◽  
Layer Deposition ◽  
Time Changes ◽  
Time Of Reaction

Experimental investigations of process emissions from atomic layer deposition (ALD) of Al2O3 are accomplished under various temperatures and purge times to understand its environmental sustainability performance. About 93% of Trimethylaluminum (TMA) is found flowing through ALD system without deposition. 2–9 × 104 of ultrafine nanoparticles containing 51.9 ± 4.6% of C, 16.6 ± 0.9% of Al, 31.4 ± 4.1% of O are generated during each cycle of reactions. 0.34–0.38 cm3 of CH4 (25 °C, 1 atm), which takes up 45–51% of C contained in TMA is produced simultaneously. The concentration of nanoparticles drops with the increase of purge time. CH4 also has a trend of decreasing but acts more complex with the largest emission at a short purge time. Compared with temperature, which has limited effects on reactants, purge time changes the time of reaction as well as the degree of gas phase mixing, and therefore greatly influences ALD emissions.

Radical-Enhanced Atomic Layer Deposition of a Tungsten Oxide Film with the Tunable Oxygen Vacancy Concentration

2020 ◽  
Vol 124 (33) ◽  
pp. 18156-18164 ◽  
Author(s):  
Roman I. Romanov ◽  
Maxim G. Kozodaev ◽  
Yury Y. Lebedinskii ◽  
Timofey V. Perevalov ◽  
Aleksandr S. Slavich ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Atomic Layer Deposition ◽  
Oxide Film ◽  
Tungsten Oxide ◽  
Vacancy Concentration ◽  
Atomic Layer ◽  
Oxygen Vacancy Concentration ◽  
Layer Deposition ◽  
Tungsten Oxide Film

A study of highly crystalline novel beryllium oxide film using atomic layer deposition

2011 ◽  
Vol 334 (1) ◽  
pp. 126-133 ◽  
Author(s):  
J.H. Yum ◽  
T. Akyol ◽  
M. Lei ◽  
D.A. Ferrer ◽  
Todd.W. Hudnall ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Oxide Film ◽  
Beryllium Oxide ◽  
Atomic Layer ◽  
Layer Deposition
Sign in / Sign up

Export Citation Format

Share Document