Engineering the Growth of MoS2via Atomic Layer Deposition of Molybdenum Oxide Film Precursor

2016 ◽  
Vol 2 (10) ◽  
pp. 1600330 ◽  
Author(s):  
Christian Martella ◽  
Pierpaolo Melloni ◽  
Eugenio Cinquanta ◽  
Elena Cianci ◽  
Mario Alia ◽  
...  
2011 ◽  
Vol 21 (3) ◽  
pp. 705-710 ◽  
Author(s):  
Madeleine Diskus ◽  
Ola Nilsen ◽  
Helmer Fjellvåg

2020 ◽  
Vol 38 (4) ◽  
pp. 042406 ◽  
Author(s):  
Julie Nitsche Kvalvik ◽  
Jon Borgersen ◽  
Per-Anders Hansen ◽  
Ola Nilsen

2017 ◽  
Vol 29 (5) ◽  
pp. 2024-2032 ◽  
Author(s):  
Brent D. Keller ◽  
Adam Bertuch ◽  
J. Provine ◽  
Ganesh Sundaram ◽  
Nicola Ferralis ◽  
...  

2014 ◽  
Vol 492 ◽  
pp. 375-379 ◽  
Author(s):  
Dip K. Nandi ◽  
Shaibal K. Sarkar

This work focuses on synthesis of molybdenum oxide (MoO3) by Atomic layer deposition (ALD) using molybdenum hexacarbonyl [Mo (CO)6] and ozone. In-situ growth characteresticswerestudied by Quartz Crystal Microbalance (QCM). ALD temperature window for this material lies between 165 to 175°C giving a maximum growth rate of 0.45 Å per ALD cycle. Negligible nucleation was found by QCM studyindicating a linear growth of the film. Effect of different oxidants on the growth rate is also studied.As-deposited film is amorphous in nature which converts to monoclinic-MoO3 after annealing as seen by taransmission electron microscopy.


2020 ◽  
Vol 7 (22) ◽  
pp. 2000895
Author(s):  
Geoffrey Gregory ◽  
Christoph Luderer ◽  
Haider Ali ◽  
Tamil S. Sakthivel ◽  
Titel Jurca ◽  
...  

2020 ◽  
Vol 124 (33) ◽  
pp. 18156-18164 ◽  
Author(s):  
Roman I. Romanov ◽  
Maxim G. Kozodaev ◽  
Yury Y. Lebedinskii ◽  
Timofey V. Perevalov ◽  
Aleksandr S. Slavich ◽  
...  

2014 ◽  
Vol 32 (1) ◽  
pp. 01A119 ◽  
Author(s):  
Adam Bertuch ◽  
Ganesh Sundaram ◽  
Mark Saly ◽  
Daniel Moser ◽  
Ravi Kanjolia

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