Optimization of oxygen vacancy concentration in HfO2/HfOx bilayer-structured ultrathin memristors by atomic layer deposition and their biological synaptic behavior

2020 ◽  
Vol 8 (36) ◽  
pp. 12478-12484
Author(s):  
Chang Liu ◽  
Chun-Chen Zhang ◽  
Yan-Qiang Cao ◽  
Di Wu ◽  
Peng Wang ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Atomic Layer Deposition ◽  
Vacancy Concentration ◽  
Atomic Layer ◽  
Oxygen Vacancy Concentration ◽  
Synaptic Functions ◽  
Layer Deposition

Tuning the oxygen vacancy concentration in HfO2/HfOx bilayer-structured ultrathin memristors to simulate synaptic functions.

Radical-Enhanced Atomic Layer Deposition of a Tungsten Oxide Film with the Tunable Oxygen Vacancy Concentration

2020 ◽  
Vol 124 (33) ◽  
pp. 18156-18164 ◽  
Author(s):  
Roman I. Romanov ◽  
Maxim G. Kozodaev ◽  
Yury Y. Lebedinskii ◽  
Timofey V. Perevalov ◽  
Aleksandr S. Slavich ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Atomic Layer Deposition ◽  
Oxide Film ◽  
Tungsten Oxide ◽  
Vacancy Concentration ◽  
Atomic Layer ◽  
Oxygen Vacancy Concentration ◽  
Layer Deposition ◽  
Tungsten Oxide Film

Effect of Al2O3 Capping Layer in ZnO TFT Fabricated by Atomic Layer Deposition

2013 ◽  
Vol 658 ◽  
pp. 108-111
Author(s):  
Kwang Seok Jeong ◽  
Yu Mi Kim ◽  
Ho Jin Yun ◽  
Seung Dong Yang ◽  
Sang Youl Lee ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Atomic Layer Deposition ◽  
Layer Thickness ◽  
Atomic Layer ◽  
Zno Films ◽  
Zno Film ◽  
Capping Layer ◽  
Layer Deposition ◽  
Metallic Conduction ◽  
Conduction Behavior

In this paper, the electrical and physical analysis is carried out to investigate the effect of Al2O3 capping layer on ZnO film using atomic layer deposition. ZnO TFTs shows the metallic conduction behavior as Al2O3 capping layer thickness increases. From SIMS analysis, it is found out that the diffusion of Al into ZnO film is enhanced according to Al2O3 capping layer thickness. Moreover, the defects related to oxygen such as oxygen vacancy increase from XPS analysis and ZnO films reveal less compressive stress by substitution of Zn with Al form XRD analysis. That is, the metallic conduction behavior of ZnO TFTs with Al2O3 capping layer can be explained due to increase in the carrier concentration in ZnO channel layer from oxygen vacancy and substitution of Zn with Al.

scholarly journals Reliable resistive switching memory based on oxygen-vacancy-controlled bilayer structures

RSC Advances ◽  
2016 ◽  
Vol 6 (26) ◽  
pp. 21736-21741 ◽  
Author(s):  
Kyuhyun Park ◽  
Jang-Sik Lee
Keyword(s):  
Oxygen Vacancy ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Atomic Layer ◽  
Resistive Switching Memory ◽  
Layer Deposition ◽  
Aluminum Oxide Layer ◽  
Switching Memory

Reliable resistive switching memory devices were developed by controlling the oxygen vacancies in aluminum oxide layer during atomic layer deposition and by adopting bilayer structures.

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

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