Competitive halogenation of silicon surfaces in HBr/Cl2 plasmas studied with x‐ray photoelectron spectroscopy and in situ, real‐time, pulsed laser‐induced thermal desorption

1995 ◽  
Vol 13 (4) ◽  
pp. 1970-1976 ◽  
Author(s):  
C. C. Cheng ◽  
K. V. Guinn ◽  
I. P. Herman ◽  
V. M. Donnelly
Keyword(s):  
Real Time ◽  
Thermal Desorption ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Silicon Surfaces ◽  
X Ray

Incorporation and Role of Nitrogen During Oxynitridation of Silicon Studied by Photoelectron Spectroscopy

1999 ◽  
Vol 567 ◽  
Author(s):  
Masayuki Suzuki ◽  
Yoji Saito
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Oxide Films ◽  
Silicon Surfaces ◽  
Gaseous Mixtures ◽  
X Ray ◽  
Initial Stage ◽  
Thermal Stability Of

ABSTRACTWe tried direct oxynitridation of silicon surfaces by remote-plasma-exited nitrogen and oxygen gaseous mixtures at 700°C in a high vacuum. The oxynitrided surfaces were investigated with in-situ X-ray photoelectron spectroscopy. With increase of the oxynitridation time, the surface density of nitrogen gradually increases, but that of oxygen shows nearly saturation behavior after the rapid increase in the initial stage. We also annealed the grown oxynitride and oxide films to investigate the role of the contained nitrogen. The desorption rate of oxygen from the oxynitride films is much less than that from oxide films. We confirmed that nitrogen stabilizes the thermal stability of these oxynitride films.

scholarly journals In situ metalation of free base phthalocyanine covalently bonded to silicon surfaces

2014 ◽  
Vol 5 ◽  
pp. 2222-2229 ◽  
Author(s):  
Fabio Lupo ◽  
Cristina Tudisco ◽  
Federico Bertani ◽  
Enrico Dalcanale ◽  
Guglielmo G Condorelli
Keyword(s):  
Porous Silicon ◽  
Photoelectron Spectroscopy ◽  
Relevant Information ◽  
Silicon Surfaces ◽  
Porous Si ◽  
Wet Chemistry ◽  
X Ray ◽  
Covalently Bonded ◽  
Phthalocyanine Ring

Free 4-undecenoxyphthalocyanine molecules were covalently bonded to Si(100) and porous silicon through thermic hydrosilylation of the terminal double bonds of the undecenyl chains. The success of the anchoring strategy on both surfaces was demonstrated by the combination of X-ray photoelectron spectroscopy with control experiments performed adopting the commercially available 2,3,9,10,16,17,23,24-octakis(octyloxy)-29H,31H-phthalocyanine, which is not suited for silicon anchoring. Moreover, the study of the shape of the XPS N 1s band gave relevant information on the interactions occurring between the anchored molecules and the substrates. The spectra suggest that the phthalocyanine ring interacts significantly with the flat Si surface, whilst ring–surface interactions are less relevant on porous Si. The surface-bonded molecules were then metalated in situ with Co by using wet chemistry. The efficiency of the metalation process was evaluated by XPS measurements and, in particular, on porous silicon, the complexation of cobalt was confirmed by the disappearance in the FTIR spectra of the band at 3290 cm−1 due to –NH stretches. Finally, XPS results revealed that the different surface–phthalocyanine interactions observed for flat and porous substrates affect the efficiency of the in situ metalation process.

Epitaxial EuO thin films by pulsed laser deposition monitored by in situ x-ray photoelectron spectroscopy

2010 ◽  
Vol 518 (18) ◽  
pp. 5173-5176 ◽  
Author(s):  
J.N. Beukers ◽  
J.E. Kleibeuker ◽  
G. Koster ◽  
D.H.A. Blank ◽  
G. Rijnders ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray

Growth of TiO2 Thin Films by Pulsed Laser Evaporation

1990 ◽  
Vol 191 ◽  
Author(s):  
Ming Y. Chen ◽  
P. Terrence Murray
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Grazing Incidence ◽  
Ex Situ ◽  
Laser Evaporation ◽  
Tio2 Thin Films ◽  
Film Properties ◽  
X Ray

ABSTRACTThin films of TiO2 have been grown by pulsed laser evaporation. The films were analyzed by in-situ Auger and x-ray photoelectron spectroscopy as well as by ex-situ grazing incidence xray diffraction. Films grown at room temperature and at a pressure of 5×10minus; 3 Torr were oxygen deficient. Films grown at 500°C and higher were found to be stoichiometric TiO2.The effect of substrate temperature and evaporation conditions on film properties will be discussed.

A comparative study on as-deposited and in situ oxidized ZnO/diamondlike carbon (DLC) nanocomposite by pulsed laser deposition technique

2010 ◽  
Vol 25 (5) ◽  
pp. 899-909 ◽  
Author(s):  
Yuan M. Foong ◽  
Angel T.T. Koh ◽  
Jovan Hsieh ◽  
Daniel H.C. Chua
Keyword(s):  
Laser Ablation ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Mechanism ◽  
X Ray ◽  
Transmission Electron ◽  
Diamondlike Carbon ◽  
Deposited Films

As-deposited ZnO/diamondlike carbon (DLC) was prepared using the laser ablation technique on ZnO/C targets, and in situ oxidized ZnO/DLC was prepared by using the same technique, but with the presence of oxygen on Zn/C targets. Transmission electron microscopy showed that ZnO/DLC films were obtainable by using both methods, but only in situ oxidized ZnO/DLC films showed the ultraviolet absorption at ˜370 nm. In situ oxidized films are highly sp3-bonded and rougher than as-deposited films, but as-deposited films are mechanically harder, stiffer, and have higher adhesion strength than in situ oxidized films. X-ray photoelectron spectroscopy revealed that a lower fraction of SiC, but a higher fraction of sp3 bonding was formed in the in situ oxidized ZnO/DLC. This hinted that the presence of oxygen might have scattered the plume’s expansion and reduced the energy possessed by the ions, thus reducing the graphitization and the formation of SiC in DLC matrix. Hence, by altering the deposition mechanism during laser ablation, ZnO/DLC films with modified material properties can be tailored.

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