Theory of Plasmonic Hot-Carrier Generation and Relaxation

2021 ◽  
Author(s):  
Yu Zhang
Keyword(s):  
Carrier Generation ◽  
Hot Carrier

Hot-carrier generation in submicrometer VLSI environment

1986 ◽  
Vol 21 (1) ◽  
pp. 187-192 ◽  
Author(s):  
T. Sakurai ◽  
K. Nogami ◽  
M. Kakumu ◽  
T. Iizuka
Keyword(s):  
Carrier Generation ◽  
Hot Carrier

Plasmonic Au/TiO2 -Dumbbell-On-Film Nanocavities for High-Efficiency Hot-Carrier Generation and Extraction

2018 ◽  
Vol 28 (34) ◽  
pp. 1800383 ◽  
Author(s):  
Kwun Hei Willis Ho ◽  
Aixue Shang ◽  
Fenghua Shi ◽  
Tsz Wing Lo ◽  
Pui Hong Yeung ◽  
...  
Keyword(s):  
High Efficiency ◽  
Carrier Generation ◽  
Hot Carrier

A Unified Analysis on Hot Carrier Generation in p-Channel and n-Channel MOSFET's

1988 ◽  
Vol 27 (Part 2, No. 12) ◽  
pp. L2398-L2400 ◽  
Author(s):  
Kazuyuki Saito ◽  
Akira Yoshii
Keyword(s):  
Carrier Generation ◽  
Hot Carrier

scholarly journals Hot carriers generated by plasmons: where are they generated and where do they go from there?

2019 ◽  
Vol 214 ◽  
pp. 35-58 ◽  
Author(s):  
Jacob B. Khurgin
Keyword(s):  
Unified Theory ◽  
Hot Carriers ◽  
Carrier Generation ◽  
Hot Carrier

A physically transparent unified theory of optically- and plasmon-induced hot carrier generation in metals is developed with all of the relevant mechanisms included.

scholarly journals Hot Carrier Generation and Extraction of Plasmonic Alloy Nanoparticles

ACS Photonics ◽  
2017 ◽  
Vol 4 (5) ◽  
pp. 1146-1152 ◽  
Author(s):  
Marco Valenti ◽  
Anirudh Venugopal ◽  
Daniel Tordera ◽  
Magnus P. Jonsson ◽  
George Biskos ◽  
...  
Keyword(s):  
Alloy Nanoparticles ◽  
Carrier Generation ◽  
Hot Carrier

RF CMOS RELIABILITY

2001 ◽  
Vol 11 (04) ◽  
pp. 1249-1295 ◽  
Author(s):  
SASAN NASEH ◽  
M. JAMAL DEEN
Keyword(s):  
Circuit Simulation ◽  
Low Noise ◽  
Rf Cmos ◽  
Carrier Generation ◽  
Hot Carrier ◽  
Rf Cmos Circuits ◽  
Noise Amplifier ◽  
Hot Carrier Effects ◽  
Rf Performance ◽  
Nmos Transistors

In this chapter the effects of hot carrier on the reliability of NMOS transistors are investigated. First, it is explained why the hot carrier issue can be important in RF CMOS circuits. Important mechanisms of hot carrier generation are reviewed and some of the techniques used in the measurement of hot carrier damages are explained. Next, results of measurement of DC hot carrier stress on the NMOS transistors are presented. The main focus here is the RF performance of the NMOS devices and circuits mode of them, but DC parameters of the device such as its I-V characteristics and threshold voltage are presented, as they directly affect the RF performance. Finally, using the measurements of hot carrier effects on single NMOS transistors, the effects of hot carriers on three parameters of a low noise amplifier, matching, power gain and stability, are predicted using circuit simulation.

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