Observation of Strong J-Aggregate Light Emission in Monolayer Molecular Crystal on Hexagonal Boron Nitride

2020 ◽  
Vol 124 (37) ◽  
pp. 7340-7345
Author(s):  
Beilei Sun ◽  
Xin Xu ◽  
Guodong Zhou ◽  
Li Tao ◽  
Wang Xinran ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Molecular Crystal ◽  
Light Emission ◽  
Hexagonal Boron Nitride

scholarly journals Dynamically tuned non-classical light emission from atomic defects in hexagonal boron nitride

2019 ◽  
Vol 2 (1) ◽  
Author(s):  
Snežana Lazić ◽  
André Espinha ◽  
Sergio Pinilla Yanguas ◽  
Carlos Gibaja ◽  
Félix Zamora ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Information Technologies ◽  
Light Emission ◽  
Hexagonal Boron Nitride ◽  
Theoretical Calculations ◽  
Optical Emission ◽  
Spectral Tuning ◽  
Spectral Detection ◽  
On Chip

Abstract Luminescent defects in hexagonal boron nitride (h-BN) have recently emerged as a promising platform for non-classical light emission. On-chip solutions, however, require techniques for controllable in-situ manipulation of quantum light. Here, we demonstrate the dynamic spectral and temporal tuning of the optical emission from h-BN via moving acousto-mechanical modulation induced by stimulated phonons. When perturbed by the propagating acoustic phonon, the optically probed radiative h-BN defects are periodically strained and their sharp emission lines are modulated by the deformation potential coupling. This results in an acoustically driven spectral tuning within a 2.5-meV bandwidth. Our findings, supported by first-principles theoretical calculations, reveal exceptionally high elasto-optic coupling in h-BN of ~50 meV/%. Temporal control of the emitted photons is achieved by combining the acoustically mediated fine-spectral tuning with spectral detection filtering. This study opens the door to the use of sound for scalable integration of h-BN emitters in nanophotonic and quantum information technologies.

The Near Edge Structure of Hexagonal Boron Nitride

2014 ◽  
Vol 20 (4) ◽  
pp. 1053-1059 ◽  
Author(s):  
Nicholas L. McDougall ◽  
Rebecca J. Nicholls ◽  
Jim G. Partridge ◽  
Dougal G. McCulloch
Keyword(s):  
Boron Nitride ◽  
Density Functional ◽  
Light Emission ◽  
Hexagonal Boron Nitride ◽  
Core Loss ◽  
Experimental Studies ◽  
Stacking Faults ◽  
Edge Structure ◽  
Deep Ultraviolet ◽  
Electron Energy Loss

AbstractHexagonal boron nitride (hBN) is a promising material for a range of applications including deep-ultraviolet light emission. Despite extensive experimental studies, some fundamental aspects of hBN remain unknown, such as the type of stacking faults likely to be present and their influence on electronic properties. In this paper, different stacking configurations of hBN are investigated using CASTEP, a pseudopotential density functional theory code. AB-b stacking faults, in which B atoms are positioned directly on top of one another while N atoms are located above the center of BN hexagons, are shown to be likely in conventional AB stacked hBN. Bandstructure calculations predict a single direct bandgap structure that may be responsible for the discrepancies in bandgap type observed experimentally. Calculations of the near edge structure showed that different stackings of hBN are distinguishable using measurements of core-loss edges in X-ray absorption and electron energy loss spectroscopy. AB stacking was found to best reproduce features in the experimental B and N K-edges. The calculations also show that splitting of the 1s to π* peak in the B K-edge, recently observed experimentally, may be accounted for by the presence of AB-b stacking faults.

scholarly journals New insights into nonclassical light emission from defects in multi-layer hexagonal boron nitride

Nanophotonics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 2041-2048 ◽  
Author(s):  
Alexander Bommer ◽  
Christoph Becher
Keyword(s):  
Boron Nitride ◽  
Light Emission ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Electronic Transitions ◽  
Photon Statistics ◽  
Zero Phonon Line ◽  
Phonon Line ◽  
Single Photon Emitters ◽  
Host Materials

AbstractIn recent years, mono-layers and multi-layers of hexagonal boron nitride (hBN) have been demonstrated as host materials for localized atomic defects that can be used as emitters for ultra-bright, non-classical light. The origin of the emission, however, is still subject to debate. Based on measurements of photon statistics, lifetime and polarization on selected emitters, we find that these atomic defects do not act as pure single photon emitters. Our results strongly and consistently indicate that each zero phonon line of individual emitters comprises two independent electronic transitions. These results give new insights into the nature of the observed emission and hint at a double defect nature of emitters in multi-layer hBN.

scholarly journals Optical quantum technologies with hexagonal boron nitride single photon sources

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Akbar Basha Dhu-al-jalali-wal-ikram Shaik ◽  
Penchalaiah Palla
Keyword(s):  
Boron Nitride ◽  
Density Functional ◽  
Light Emission ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Photon Emission ◽  
Building Blocks ◽  
Wide Range ◽  
Photon Sources ◽  
Quantum Emitters

AbstractSingle photon quantum emitters are important building blocks of optical quantum technologies. Hexagonal boron nitride (hBN), an atomically thin wide band gap two dimensional material, hosts robust, optically active luminescent point defects, which are known to reduce phonon lifetimes, promises as a stable single-photon source at room temperature. In this Review, we present the recent advances in hBN quantum light emission, comparisons with other 2D material based quantum sources and analyze the performance of hBN quantum emitters. We also discuss state-of-the-art stable single photon emitter’s fabrication in UV, visible and near IR regions, their activation, characterization techniques, photostability towards a wide range of operating temperatures and harsh environments, Density-functional theory predictions of possible hBN defect structures for single photon emission in UV to IR regions and applications of single photon sources in quantum communication and quantum photonic circuits with associated potential obstacles.

Strong light emission from defective hexagonal boron nitride monolayer coupled to near-touching random plasmonic nanounits

2021 ◽  
Author(s):  
Zeinab Eftekhari ◽  
Amir Ghobadi ◽  
Mahmut Soydan ◽  
Deniz Yildirim ◽  
neval cinel ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Light Emission ◽  
Hexagonal Boron Nitride ◽  
Strong Light

scholarly journals Phonon symmetries in hexagonal boron nitride probed by incoherent light emission

2D Materials ◽  
2016 ◽  
Vol 4 (1) ◽  
pp. 011004 ◽  
Author(s):  
T Q P Vuong ◽  
G Cassabois ◽  
P Valvin ◽  
V Jacques ◽  
A Van Der Lee ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Light Emission ◽  
Hexagonal Boron Nitride ◽  
Incoherent Light

scholarly journals Resonant Light Emission from Graphene/Hexagonal Boron Nitride/Graphene Tunnel Junctions

Nano Letters ◽  
2021 ◽  
Author(s):  
Anna Kuzmina ◽  
Markus Parzefall ◽  
Patrick Back ◽  
Takashi Taniguchi ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Light Emission ◽  
Tunnel Junctions ◽  
Hexagonal Boron Nitride

Marcus-Hush Theory Revealed by Electron Tunneling Through Hexagonal Boron Nitride

2019 ◽  
Author(s):  
Matěj Velický ◽  
Sheng Hu ◽  
Colin R. Woods ◽  
Peter S. Toth ◽  
Viktor Zólyomi ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Boron Nitride ◽  
Electron Tunneling ◽  
Hexagonal Boron Nitride ◽  
Large Body ◽  
Liquid Solution ◽  
Limiting Current ◽  
Electron Transfer Rate Constant ◽  
Electrochemical Parameters ◽  
Voltammetric Measurements

Marcus-Hush theory of electron transfer is one of the pillars of modern electrochemistry with a large body of supporting experimental evidence presented to date. However, some predictions, such as the electrochemical behavior at microdisk electrodes, remain unverified. Herein, we present a study of electron tunneling across a hexagonal boron nitride barrier between a graphite electrode and redox levels in a liquid solution. This was achieved by the fabrication of microdisk electrodes with a typical diameter of 5 µm. Analysis of voltammetric measurements, using two common redox mediators, yielded several electrochemical parameters, including the electron transfer rate constant, limiting current, and transfer coefficient. They show a significant departure from the Butler-Volmer behavior in a clear manifestation of the Marcus-Hush theory of electron transfer. In addition, our system provides a novel experimental platform, which could be applied to address a number of scientific problems such as identification of reaction mechanisms, surface modification, or long-range electron transfer.

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