Reference-Free Total Reflection X-ray Fluorescence Analysis of Semiconductor Surfaces with Synchrotron Radiation

2007 ◽  
Vol 79 (20) ◽  
pp. 7873-7882 ◽  
Author(s):  
Burkhard Beckhoff ◽  
Rolf Fliegauf ◽  
Michael Kolbe ◽  
Matthias Müller ◽  
Jan Weser ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Fluorescence Analysis ◽  
Total Reflection ◽  
Semiconductor Surfaces ◽  
X Ray

Txrf-Sources-Samples and Detectors

1995 ◽  
Vol 39 ◽  
pp. 755-766
Author(s):  
P. Wobrauschek ◽  
P. Kregsamer ◽  
W. Ladisich ◽  
R. Riede ◽  
Christina Streli ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Detection Limits ◽  
Fluorescence Analysis ◽  
Total Reflection ◽  
Light Elements ◽  
X Ray

Total reflection x-ray fluorescence analysis (TXRF) has reached a mature state but still improvements are possible in selecting the proper components for TXRF and optimizing them in the best suitable way. Two approaches are presented, the extension of the number of detectable elements after K-shell excitation and the improvement of the detection limits. The results show, that the elements from B to U can be detected by their characteristic K-lines and that detection limits for medium Z elements e.g. Ni in the fg range are achievable. Most of the best results have been measured using synchrotron radiation with spectral modifying devices like multilayer monochromators. Other x-ray sources like a windowless tube with exchangeable anodes of either material Al, Si or Mo were successfully tested for the efficient excitation of light elements.

scholarly journals Recent results of synchrotron radiation induced total reflection X-ray fluorescence analysis at HASYLAB, beamline L

2006 ◽  
Vol 61 (10-11) ◽  
pp. 1129-1134 ◽  
Author(s):  
C. Streli ◽  
G. Pepponi ◽  
P. Wobrauschek ◽  
C. Jokubonis ◽  
G. Falkenberg ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Fluorescence Analysis ◽  
Total Reflection ◽  
X Ray ◽  
Radiation Induced

Total reflection X-ray fluorescence analysis of light elements with synchrotron radiation and special X-ray tubes

1997 ◽  
Vol 52 (7) ◽  
pp. 861-872 ◽  
Author(s):  
Christina Streli ◽  
P Wobrauschek ◽  
V Bauer ◽  
P Kregsamer ◽  
R Görgl ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Fluorescence Analysis ◽  
Total Reflection ◽  
Light Elements ◽  
X Ray

Near-Surface Analysis of Semicondutor Using Grazing Incidence X-Ray Fluorescence

1987 ◽  
Vol 31 ◽  
pp. 487-494 ◽  
Author(s):  
Atsuo Iida ◽  
Kenji Sakurai ◽  
Yohichi Gohshi
Keyword(s):  
Surface Layer ◽  
High Temperature ◽  
Synchrotron Radiation ◽  
Fluorescence Analysis ◽  
Grazing Incidence ◽  
Total Reflection ◽  
Near Surface ◽  
X Ray ◽  
Gaas Wafer ◽  
Glancing Angle

SummaryThe X-ray external total reflection was used for the x-ray fluorescence analysis of the near surface layer of a GaAs wafer and a GaAlAs epilayer. Synchrotron radiation was used as an excitation source. The intensity ratio between the Ga K and As K fluorescence signals was measured as a function of the glancing angle. The reduction of As atoms near the surface of less than a hundred Å was observed for the high temperature annealed GaAlAs epilayer.

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