Precipitation processes in materials synthesis by high-dose ion implantation of semiconductors

1988 ◽  
Vol 46 ◽  
pp. 486-487
Author(s):  
S. J. Krause ◽  
C. O. Jung ◽  
T.S. Ravi ◽  
S.R. Wilson
Keyword(s):  
Ion Implantation ◽  
Structural Changes ◽  
High Dose ◽  
Materials Synthesis ◽  
Whole Process ◽  
High Temperature Anneal ◽  
Precipitation Processes ◽  
Precipitate Nucleation ◽  
New Phase ◽  
High Dose Implantation

High dose ion implantation for materials synthesis in semiconductors is receiving increasing attention with the commercialization of medium and high current ion implanters. Surface and buried dielectric layers in silicon are being fabricated by high-dose implantation of oxygen, nitrogen, and carbon. Metallic silicides are being synthesized by implantation of metals such as cobalt and nickel. The evolution of a new phase or phases from a supersaturated solid solution during implantation occurs in a zone with increasing concentration which is also in a concentration gradient. Because of this, and the dynamic phenomena occurring, the whole process is quite complex. Additionally, a final, high temperature anneal to remove damage and to consolidate and stabilize the new phase(s) further complicates any analysis. There is no standard approach to analyze structural changes during high dose implantation and subsequent annealing, but it should be possible to approximate the phenomena based on traditional models for precipitation processes in solids. These processes include precipitate nucleation, growth, coarsening, coalescence, and dissolution. The most heavily studied process of materials synthesis by implantation is formation of a buried oxide layer in silicon (often referred to as SIMOX material).

Structural Analysis of Silicon Doped by Plasma Source Ion Implantation

1993 ◽  
Vol 316 ◽  
Author(s):  
R.J. Matyi ◽  
D.L. Chapek ◽  
J.R. Conrad ◽  
S.B. Felch
Keyword(s):  
Ion Implantation ◽  
Diffuse Scattering ◽  
Structural Changes ◽  
Plasma Source ◽  
Perfect Crystal ◽  
Crystal Defects ◽  
High Dose ◽  
X Ray ◽  
Doped Silicon ◽  
Plasma Source Ion Implantation

ABSTRACTWe have used high resolution x-ray diffraction to analyze the structural changes that accompany boron doping of silicon by BF3 plasma source ion implantation (PSII). Triple crystal diffraction analysis of as-implanted PSII doped silicon showed little excess x-ray diffuse scattering, even when analyzed using the asymmetric (113) reflection for increased surface sensitivity. This result suggests that PSΠ is capable of providing high dose implantation with low damage. Annealing of the PSII-doped silicon showed the development of a compressive surface layer, indicated by enhanced x-ray scattering directed perpendicular to the surface. Virtually all of the scattering from the annealed samples was concentrated in the so-called “surface streak” which arises due to dynamical diffraction from the perfect crystal Si structure. Little if any diffuse scattering due to kinematic scattering from crystal defects was detected. These observations indicate that plasma source doping can be used to achieve both a shallow implant depth and an extremely uniform incorporation of boron into the silicon lattice.

Buried Oxide and Silicide Formation by High-Dose Implantation in Silicon

MRS Bulletin ◽  
1992 ◽  
Vol 17 (6) ◽  
pp. 40-46 ◽  
Author(s):  
G.K. Celler ◽  
Alice E. White
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Integrated Circuit ◽  
High Dose ◽  
High Current ◽  
Silicide Formation ◽  
Semiconductor Substrate ◽  
Beam Currents ◽  
New Generation ◽  
High Dose Implantation

Experiments in ion implantation were first performed almost 40 years ago by nuclear physicists. More recently, ion implanters have become permanent fixtures in integrated circuit processing lines. Manufacture of the more complex integrated circuits may involve as many as 10 different ion implantation steps. Implantation is used primarily at f luences of 1012–1015 ions/cm2 to tailor the electrical properties of a semiconductor substrate, but causing only a small perturbation in the composition of the target (see the article by Seidel and Larson in this issue of the MRS Bulletin). Applications of implantation had been limited by the small beam currents that were available, but recently a new generation of high-current implanters has been developed. This high-current capability allows implanting concentrations up to three orders of magnitude higher than those required for doping—enough to create a compound.

Magnetic and structural changes in the near-surface epitaxial Y295La005Fe5O12 films after high-dose ion implantation

2016 ◽  
Vol 55 (12) ◽  
pp. B144 ◽  
Author(s):  
I. M. Fodchuk ◽  
I. I. Gutsuliak ◽  
V. V. Dovganiuk ◽  
A. O. Kotsyubynskiy ◽  
U. Pietsch ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Structural Changes ◽  
High Dose ◽  
Near Surface

Annealing of Ion-Implanted Hydrogenated Amorphous Silicon: Stable and Removable Damage

1993 ◽  
Vol 297 ◽  
Author(s):  
A.J.M. Berntsen ◽  
P.A. Stolk ◽  
W.F. VAN DER WEG ◽  
F.W. Saris
Keyword(s):  
Amorphous Silicon ◽  
Structural Changes ◽  
Hydrogenated Amorphous Silicon ◽  
Structural Disorder ◽  
High Dose ◽  
Angle Variation ◽  
Reflection And Transmission ◽  
Hydrogenated Amorphous ◽  
Average Bond ◽  
High Dose Implantation

Hydrogenated amorphous silicon (a-Si:H) films were irradiated with 1-MeV Si+ ions. The accumulation and annealing of ion damage was investigated by Raman scattering, optical reflection and transmission, and conductivity measurements. For damage levels up to 0.003 displacements per atom, electrical defects are created with no measurable effect on the structural properties. These defects can be completely annealed out at 180°C. Further irradiation results in an increase in the average bond-angle variation in the films. This structural disorder causes a decrease of the optical band gap with 0.46 eV. The structural changes caused by high-dose implantation can not be reversed by annealing at 180° C, which results in the formation of anneal-stable electrical defects.

Ion Implantation of KnbO3 and LiNbO3 at Elevated Temperatures

1988 ◽  
Vol 128 ◽  
Author(s):  
C H. Buchal ◽  
R. Irmscher ◽  
P. Günter
Keyword(s):  
Ion Implantation ◽  
Dynamic Recrystallization ◽  
Substrate Temperature ◽  
Elevated Temperatures ◽  
High Dose ◽  
Single Crystalline ◽  
First Time ◽  
High Dose Implantation

ABSTRACTIon implantation, annealing and channeling of single crystalline samples of KnbO3 and LiNbO3 have been studied. Raising the substrate temperature above 600 K, greatly increases the tolerance of the crystals for high-dose implantation. In LiNbO3 dynamic recrystallization has been observed for the first time.

scholarly journals The microstructure of Si surface layers after plasma-immersion He+ion implantation and subsequent thermal annealing

2017 ◽  
Vol 50 (2) ◽  
pp. 539-546 ◽  
Author(s):  
Andrey Lomov ◽  
Kirill Shcherbachev ◽  
Yurii Chesnokov ◽  
Dmitry Kiselev
Keyword(s):  
High Resolution ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Structural Changes ◽  
Layer Structure ◽  
Characteristic Size ◽  
High Dose ◽  
X Ray ◽  
P Type ◽  
Subsequent Thermal Annealing

The structural changes in the surface layer of p-type Cz-Si(001) samples after high-dose low-energy (2 keV) He+plasma-immersion ion implantation and subsequent thermal annealing were studied using a set of complementary methods: high-resolution X-ray reflectometry, high-resolution X-ray diffraction, transmission electron microscopy and atomic force microscopy. The formation of a three-layer structure was observed (an amorphous a-SiOxlayer at the surface, an amorphous a-Si layer and a heavily damaged tensile-strained crystalline c-Si layer), which remained after annealing. Helium-filled bubbles were observed in the as-implanted sample. The influence of annealing on the evolution of the three-layer structure and the bubbles is considered. The bubbles are shown to grow after annealing. Their characteristic size is determined to be in the range of 5–20 nm. Large helium-filled bubbles are located in the amorphous a-Si layer. Small bubbles form inside the damaged crystalline Si layer. These bubbles are a major source of tensile strain in the c-Si layer.

Structural Stability and Optical Properties of hexagonal and cubic CdSe Nanocrystals synthesized in MgO

2004 ◽  
Vol 848 ◽  
Author(s):  
S.W.H. Eijt ◽  
van Huis ◽  
P.E. Mijnarends ◽  
B.J. Kooi ◽  
M. Nanu
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Band Gap ◽  
Structural Changes ◽  
Optical Absorption Spectroscopy ◽  
Cdse Nanocrystals ◽  
High Dose ◽  
Electronic Band ◽  
Supersaturated Solid Solutions ◽  
Direct Band

ABSTRACTWe present a study of CdSe nanocrystals synthesized in MgO by precipitation of Cd and Se supersaturated solid solutions, created in MgO single crystals by ion implantation, in the temperature range between 300 °C and 1100 °C. For high-dose ion implantation, optical absorption spectroscopy revealed the presence of the ∼1.8 eV CdSe semiconductor band-edge. Small sized nanocrystals adopt the rocksalt instead of the wurtzite structure because the former fits better in the MgO matrix and results in lower interface energies. A better understanding of these structural changes and optical properties is obtained from ab-initio total energy calculations on wurtzite, zincblende and rocksalt CdSe using the VASP pseudopotential code. The calculated electronic band structures are compared of zincblende CdSe, a direct band-gap semiconductor, and rocksalt CdSe, which has an indirect optical band-gap.

Microanalysis of high-dose oxygen-implanted germanium

1991 ◽  
Vol 49 ◽  
pp. 866-867
Author(s):  
M.J. Kim ◽  
Q. Zhang ◽  
K. Das Chowdhury ◽  
R.W. Carpenter ◽  
J.C. Kelly
Keyword(s):  
Ion Implantation ◽  
High Speed ◽  
Structural Changes ◽  
Rutherford Backscattering Spectrometry ◽  
Microstructural Characterization ◽  
High Dose ◽  
Ion Milling ◽  
Cross Sectional ◽  
Microstructural Investigation ◽  
Implantation Temperature

High-dose ion implantation is being increasingly used to produce buried oxide layers in silicon for high speed CMOS and VLSI applications. Ion implantation into germanium has been used to control optical properties. Germanium implanted with high dose oxygen is a promising material for photodetectors and solar energy converters. In the present study the structural changes in germanium caused by high dose oxygen implantation, giving low reflectivity in the far-UV and visible, were characterized by HREM and high spatial resolution AEM.The single crystal n-type germanium {111} wafers were implanted with O+ ions to doses of lx1017 to 1.5xl018 cm-2 at 45 keV. The implantation temperature was estimated to be about 400°C. The absorption behavior of the implanted samples was measured by Infrared (IR) spectroscopy. The compositional profiles of implanted layers were obtained by Rutherford Backscattering Spectrometry (RBS) and position-resolved EELS. Cross-sectional TEM samples for microstructural characterization were prepared by mechanical polishing and ion milling. A Philips 400ST/FEG analytical microscope was used for nanoprobe experiments, at 100 kV. Microstructural investigation was performed using ISI-002B and JEM-2000FX microscopes, at 200 kV.

In Situ TEM Observation of Defects and Amorphous Phase in Si Wafer During Ion Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Naoto Shigenaka ◽  
Tuneyuki Hashimoto ◽  
Motomasa Fuse ◽  
Nobuo Owada ◽  
Hizuru Yamaguchi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Amorphous Phase ◽  
Defect Density ◽  
Defect Layer ◽  
High Dose ◽  
In Situ Tem ◽  
High Dose Implantation ◽  
Amorphous Phase Formation ◽  
Si Wafer

ABSTRACTIn situ TEM observations of defects and. the amorphous phase in Si wafer during 150 keV Ar+ ion implantation were made which elucidated their characteristic behavior in Si. Defects introduced by ion implantation were eliminated by amorphous phase formation and then new defects did not form in the amorphous phase. Microstructural evolution in Si wafers under high dose implantation (2E16 ions/cm2) of 400 keV Si* ions was also investigated at temperatures of -70, -30, 20, 100 and 200 °C using a cross-section 1 TEM observation technique. At temperature of 20 °C and above, a defect layer was formed in each specimen, and the defect density was observed to decrease as temperature increased. At temperture of -30 °C and below the amorphous phase was formed and a defect layer which made contact with this phase was also observed. After annealing of these implanted specimens at 850 °C for 20 min, the amorphous phase had crystallized and the defect layer in contact with the amorphous phase was almost eliminated. But another defect layer was formed during annealing in the region where the amorphous phase had existed.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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