Structural Analysis of Silicon Doped by Plasma Source Ion Implantation

1993 ◽  
Vol 316 ◽  
Author(s):  
R.J. Matyi ◽  
D.L. Chapek ◽  
J.R. Conrad ◽  
S.B. Felch
Keyword(s):  
Ion Implantation ◽  
Diffuse Scattering ◽  
Structural Changes ◽  
Plasma Source ◽  
Perfect Crystal ◽  
Crystal Defects ◽  
High Dose ◽  
X Ray ◽  
Doped Silicon ◽  
Plasma Source Ion Implantation

ABSTRACTWe have used high resolution x-ray diffraction to analyze the structural changes that accompany boron doping of silicon by BF3 plasma source ion implantation (PSII). Triple crystal diffraction analysis of as-implanted PSII doped silicon showed little excess x-ray diffuse scattering, even when analyzed using the asymmetric (113) reflection for increased surface sensitivity. This result suggests that PSΠ is capable of providing high dose implantation with low damage. Annealing of the PSII-doped silicon showed the development of a compressive surface layer, indicated by enhanced x-ray scattering directed perpendicular to the surface. Virtually all of the scattering from the annealed samples was concentrated in the so-called “surface streak” which arises due to dynamical diffraction from the perfect crystal Si structure. Little if any diffuse scattering due to kinematic scattering from crystal defects was detected. These observations indicate that plasma source doping can be used to achieve both a shallow implant depth and an extremely uniform incorporation of boron into the silicon lattice.

Inner surface reaction and modification of titanium alloy by a new plasma source ion implantation method

1998 ◽  
Vol 13 (7) ◽  
pp. 1823-1827 ◽  
Author(s):  
Mu Sun ◽  
Kan Xie ◽  
Si-ze Yang
Keyword(s):  
Titanium Alloy ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Plasma Source ◽  
X Ray ◽  
Inner Surface ◽  
Plasma Source Ion Implantation ◽  
Nitrogen Ion ◽  
Modification Of Titanium ◽  
Implantation Method

The inner surface of a cylindrical titanium alloy target was successfully implanted with nitrogen ion using a new plasma source ion implantation method. By means of x-ray photoelectron spectroscopy and x-ray diffraction, the reactive phases and their chemical state in the implanted layer were investigated. In order to characterize the modification effect and its uniformity, the retained dose and the microhardness at seven different positions along the axis on the inner surface of the cylindrical target were measured, respectively. The experimental results show that a TiN reactive phase was formed in the implanted layer, which contributed to the improvement of inner surface microhardness. The root-mean-square deviations of retained dose and microhardness measured along the axis of the target are less than 9% and 4%, respectively, which are well within an acceptable tolerance range for metallic applications of ion implantation.

Plasma Source Ion Implantation for Ultrashallow Junctions: Low Energy and High Dose Rate

2001 ◽  
Vol 40 (Part 1, No. 4A) ◽  
pp. 2506-2507
Author(s):  
Jeonghee Cho ◽  
Seunghee Han ◽  
Yeonhee Lee ◽  
Ok Kyung Kim ◽  
Gon-Ho Kim ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Dose Rate ◽  
Plasma Source ◽  
High Dose Rate ◽  
Low Energy ◽  
High Dose ◽  
Ultrashallow Junctions ◽  
Plasma Source Ion Implantation

X-ray imaging during plasma-source ion implantation

1996 ◽  
Vol 16 (1) ◽  
pp. 141-152 ◽  
Author(s):  
M. Piper ◽  
J. L. Shohet ◽  
J. H. Booske ◽  
K. H. Chew ◽  
L. Zhang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Plasma Source ◽  
X Ray ◽  
X Ray Imaging ◽  
Plasma Source Ion Implantation

scholarly journals The microstructure of Si surface layers after plasma-immersion He+ion implantation and subsequent thermal annealing

2017 ◽  
Vol 50 (2) ◽  
pp. 539-546 ◽  
Author(s):  
Andrey Lomov ◽  
Kirill Shcherbachev ◽  
Yurii Chesnokov ◽  
Dmitry Kiselev
Keyword(s):  
High Resolution ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Structural Changes ◽  
Layer Structure ◽  
Characteristic Size ◽  
High Dose ◽  
X Ray ◽  
P Type ◽  
Subsequent Thermal Annealing

The structural changes in the surface layer of p-type Cz-Si(001) samples after high-dose low-energy (2 keV) He+plasma-immersion ion implantation and subsequent thermal annealing were studied using a set of complementary methods: high-resolution X-ray reflectometry, high-resolution X-ray diffraction, transmission electron microscopy and atomic force microscopy. The formation of a three-layer structure was observed (an amorphous a-SiOxlayer at the surface, an amorphous a-Si layer and a heavily damaged tensile-strained crystalline c-Si layer), which remained after annealing. Helium-filled bubbles were observed in the as-implanted sample. The influence of annealing on the evolution of the three-layer structure and the bubbles is considered. The bubbles are shown to grow after annealing. Their characteristic size is determined to be in the range of 5–20 nm. Large helium-filled bubbles are located in the amorphous a-Si layer. Small bubbles form inside the damaged crystalline Si layer. These bubbles are a major source of tensile strain in the c-Si layer.

scholarly journals Preparation and Properties of Ag-Containing Diamond-Like Carbon Films by Magnetron Plasma Source Ion Implantation

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
K. Baba ◽  
R. Hatada ◽  
S. Flege ◽  
W. Ensinger
Keyword(s):  
Ion Implantation ◽  
Tribological Properties ◽  
High Voltage ◽  
Photoelectron Spectroscopy ◽  
Plasma Source ◽  
Silver Concentration ◽  
Process Conditions ◽  
Diamond Like Carbon ◽  
X Ray ◽  
Plasma Source Ion Implantation

The doping effect of silver on the structure and properties of diamond-like carbon (DLC) films was investigated. The samples were prepared by a process combining acetylene plasma source ion implantation (high-voltage pulses of −10 kV) with reactive magnetron sputtering of an Ag disc. A mixture of two gases, argon, and acetylene was introduced into the discharge chamber as working gas for plasma formation. A negative high-voltage pulse was applied to the substrate holder, thus, accelerating ions towards the substrate. The chemical composition of the deposited films was modified by the respective gas flows and determined using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. The silver concentration within the DLC films influenced the structure and the tribological properties. The surface roughness, as observed by scanning electron microscopy, increased with silver concentration. The film structure was characterized by Raman spectroscopy and X-ray diffractometry (XRD). The DLC films were mainly amorphous, containing crystalline silver, with the amount of silver depending on the process conditions. The tribological properties of the films were improved by the silver doping. The lowest friction coefficient of around 0.06 was derived at a low silver content.

Recent results in plasma source ion implantation

1992 ◽  
Author(s):  
JOHN CONRAD ◽  
M. ABUZRIBA ◽  
J. BLANCHARD ◽  
D. CHAPEK ◽  
A. CHEN ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Plasma Source ◽  
Plasma Source Ion Implantation

Boron doping of silicon by plasma source ion implantation

1997 ◽  
Vol 93 (2-3) ◽  
pp. 247-253 ◽  
Author(s):  
R.J. Matyi ◽  
D.L. Chapek ◽  
D.P. Brunco ◽  
S.B. Felch ◽  
B.S. Lee
Keyword(s):  
Ion Implantation ◽  
Boron Doping ◽  
Plasma Source ◽  
Plasma Source Ion Implantation
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