In Situ TEM Observation of Defects and Amorphous Phase in Si Wafer During Ion Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Naoto Shigenaka ◽  
Tuneyuki Hashimoto ◽  
Motomasa Fuse ◽  
Nobuo Owada ◽  
Hizuru Yamaguchi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Amorphous Phase ◽  
Defect Density ◽  
Defect Layer ◽  
High Dose ◽  
In Situ Tem ◽  
High Dose Implantation ◽  
Amorphous Phase Formation ◽  
Si Wafer

ABSTRACTIn situ TEM observations of defects and. the amorphous phase in Si wafer during 150 keV Ar+ ion implantation were made which elucidated their characteristic behavior in Si. Defects introduced by ion implantation were eliminated by amorphous phase formation and then new defects did not form in the amorphous phase. Microstructural evolution in Si wafers under high dose implantation (2E16 ions/cm2) of 400 keV Si* ions was also investigated at temperatures of -70, -30, 20, 100 and 200 °C using a cross-section 1 TEM observation technique. At temperature of 20 °C and above, a defect layer was formed in each specimen, and the defect density was observed to decrease as temperature increased. At temperture of -30 °C and below the amorphous phase was formed and a defect layer which made contact with this phase was also observed. After annealing of these implanted specimens at 850 °C for 20 min, the amorphous phase had crystallized and the defect layer in contact with the amorphous phase was almost eliminated. But another defect layer was formed during annealing in the region where the amorphous phase had existed.

Characterization of Structural Changes and Defects in Ion Bombarded GaAs

1986 ◽  
Vol 82 ◽  
Author(s):  
Stephen T. Johnson ◽  
J.S. Williams ◽  
R.G. Elliman ◽  
A.P. Pogany ◽  
E. Nygren ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Amorphous Phase ◽  
Structural Changes ◽  
Extended Defects ◽  
Time Resolved ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Amorphous Phase Formation

ABSTRACTIn-situ time resolved reflectivity, Rutherford backscattering and channeling and transmission electron microscopy have been employed to characterise the evolution of Ar+ ion implantation damage in GaAs as a function of ion dose at various irradiation temperatures. Specific reflectivity signatures have been identified and characterised in terms of observed structural changes to the GaAs. Reflectivity provides a simple and convenient means of monitoring damage build up during ion implantation. In contrast to accepted models for amorphous phase formation in semiconductors, GaAs has been observed to undergo a sudden transformation from a crystal containing a dense network of extended defects to an amorphous phase under elevated temperature irradiation conditions.

Formation of Buried Sio2 By High Dose Implantation of Oxygen at Room and Liquid Nitroeen Temperatures

1985 ◽  
Vol 53 ◽  
Author(s):  
F. Namavar ◽  
J. I. Budnick ◽  
F. H. Sanchez ◽  
H. C. Hayden
Keyword(s):  
Liquid Nitrogen ◽  
Current Density ◽  
Room Temperature ◽  
Rutherford Backscattering ◽  
High Dose ◽  
Crystalline Quartz ◽  
Oxygen Ions ◽  
High Dose Implantation ◽  
A Current

ABSTRACTWe have carried out a study to understand the mechanisms involved in the formation of buried SIO2 by high dose implantation of oxygen into Si targets. Oxygen ions were implanted at 150 keV with doses up to 2.5 X 1018 ions/cm2 and a current density of less than 10 μA/cm2 into Si 〈100〉 at room and liquid nitrogen temperatures. In-situ Rutherford backscattering (RBS) analysis clearly indicates the formation of uniform buried SIO2 for both room and liquid nitrogen temperatures for doses above 1.5 X 1018/cm2.Oxygen ions were implanted at room temperature into crystalline quartz to doses of about 1018 ions cm2 at 150 keV, with a current density of 〈10〉10 μA/cm2. The RBS spectra of the oxygen implanted quartz cannot be distinguished from those of unimplanted ones. Furthermore, Si ions were implanted into crystalline quartz at 80 keV and dose of 1 X 1017 Si/cm2, and a current aensity of about 1 μA/cm2. However, no signal from Si in excess of the SiO2 ratio could be observed. Our results obtained by RBS show that implantation of either Si+ or O into SiO2 under conditions stated above does not create a layer whose Si:O ratio differs measurably from that of SiO2.

Buried Oxide and Silicide Formation by High-Dose Implantation in Silicon

MRS Bulletin ◽  
1992 ◽  
Vol 17 (6) ◽  
pp. 40-46 ◽  
Author(s):  
G.K. Celler ◽  
Alice E. White
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Integrated Circuit ◽  
High Dose ◽  
High Current ◽  
Silicide Formation ◽  
Semiconductor Substrate ◽  
Beam Currents ◽  
New Generation ◽  
High Dose Implantation

Experiments in ion implantation were first performed almost 40 years ago by nuclear physicists. More recently, ion implanters have become permanent fixtures in integrated circuit processing lines. Manufacture of the more complex integrated circuits may involve as many as 10 different ion implantation steps. Implantation is used primarily at f luences of 1012–1015 ions/cm2 to tailor the electrical properties of a semiconductor substrate, but causing only a small perturbation in the composition of the target (see the article by Seidel and Larson in this issue of the MRS Bulletin). Applications of implantation had been limited by the small beam currents that were available, but recently a new generation of high-current implanters has been developed. This high-current capability allows implanting concentrations up to three orders of magnitude higher than those required for doping—enough to create a compound.

Precipitation processes in materials synthesis by high-dose ion implantation of semiconductors

1988 ◽  
Vol 46 ◽  
pp. 486-487
Author(s):  
S. J. Krause ◽  
C. O. Jung ◽  
T.S. Ravi ◽  
S.R. Wilson
Keyword(s):  
Ion Implantation ◽  
Structural Changes ◽  
High Dose ◽  
Materials Synthesis ◽  
Whole Process ◽  
High Temperature Anneal ◽  
Precipitation Processes ◽  
Precipitate Nucleation ◽  
New Phase ◽  
High Dose Implantation

High dose ion implantation for materials synthesis in semiconductors is receiving increasing attention with the commercialization of medium and high current ion implanters. Surface and buried dielectric layers in silicon are being fabricated by high-dose implantation of oxygen, nitrogen, and carbon. Metallic silicides are being synthesized by implantation of metals such as cobalt and nickel. The evolution of a new phase or phases from a supersaturated solid solution during implantation occurs in a zone with increasing concentration which is also in a concentration gradient. Because of this, and the dynamic phenomena occurring, the whole process is quite complex. Additionally, a final, high temperature anneal to remove damage and to consolidate and stabilize the new phase(s) further complicates any analysis. There is no standard approach to analyze structural changes during high dose implantation and subsequent annealing, but it should be possible to approximate the phenomena based on traditional models for precipitation processes in solids. These processes include precipitate nucleation, growth, coarsening, coalescence, and dissolution. The most heavily studied process of materials synthesis by implantation is formation of a buried oxide layer in silicon (often referred to as SIMOX material).

In situ tEM observation of C49 to C54 TiSi2 transformation

1992 ◽  
Vol 50 (2) ◽  
pp. 1356-1357
Author(s):  
K. Barmak ◽  
L.E. Levine ◽  
D.A. Smith ◽  
Y. Komemt
Keyword(s):  
High Resistivity ◽  
In Situ Tem ◽  
Video Tape ◽  
Furnace Annealing ◽  
Plan View ◽  
Transmission Electron ◽  
In Situ Heating ◽  
Face Centered ◽  
Si Wafer

The reaction of thin films of Ti with Si results in the formation of the high resistivity (≃150 μΩcm) base-centered orthorhombic C49 phase prior to the low resistivity (≃15-20 μΩcm) face-centered orthorhombic C54 phase. In our experiments, 30 nm of Ti was evaporated onto a < 100 > oriented Si wafer cleaned in a 10:1 H2O:HF solution. The wafer had been previously implanted with As to a dose of 5×l015 cm−2. Mixed C49/C54 phase films were obtained by furnace annealing at 700°C for 10 min. Plan view transmission electron microscopy (TEM) specimens were prepared by dimpling and etching in a 10:6:6 HNO3:HF:CH3COOH solution. The sample was initially studied in a JEOL 4000FX and in situ heating experiments were carried out in a Philips 430 operating at 300 kV. The progress of the transformation was recorded on video tape. The temperature was raised relatively quickly to 700°C and then more slowly to 750°C.

Solid Phase Epitaxy of Strained Si1−xGex Alloys Formed by Highdose Ion Implantation into Silicon

1990 ◽  
Vol 187 ◽  
Author(s):  
D. J. Howard ◽  
D. C. Paine ◽  
N. G. Stoffel
Keyword(s):  
Ion Implantation ◽  
Strain Energy ◽  
Critical Strain ◽  
Solid Phase ◽  
Stacking Faults ◽  
New Method ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Si Wafer

AbstractIn this paper we propose a new method for the synthesis of Si1−xGex strained-layer alloys using high-dose ion implantation of 74Ge at 200 keV into a preamorphized <001> Si wafer followed by solid phase epitaxy (SPE). Cross-sectional TEM was performed on samples at various stages of regrowth which revealed the evolution of the amorphous/crystalline interface and the development of strain relieving defects during SPE. We report that stacking faults are kinetically favored during SPE of Si1−xGex but are energetically feasible only above a critical strain energy. We propose a model that is based on the well known Matthews and Blakeslee approach which predicts the onset of stacking faults during SPE of high-dose ion implant-synthesized Si1−xGex/Si.

Defects Induced by Helium Implantation: Impact on Boron Diffusivity

2005 ◽  
Vol 864 ◽  
Author(s):  
F. Cayrel ◽  
D. Alquier ◽  
C. Dubois ◽  
R. Jerisian
Keyword(s):  
Defect Density ◽  
Defect Layer ◽  
High Dose ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Helium Implantation ◽  
Buried Layer ◽  
Boron Diffusivity ◽  
Induced Defects ◽  
Metallic Impurities

AbstractHigh dose helium implantation followed by a suitable thermal treatment induces defects such as cavities and dislocations. Gettering efficiency of this technique for metallic impurities has been widely proved. Nevertheless, dopants, as well as point defects, interact with this defect layer. Due to the presence of vacancy type defects after helium implantation, boron diffusion can be largely influenced by such a buried layer. In this paper, we study the influence of helium induced defects on boron diffusion. The boron diffusion in presence of these defects has been analyzed as a function of different parameters such as distance between boron profile and defect layer and defect density. Our results demonstrate that the major impact known as boron enhanced diffusion can be partially or completely suppressed depending on parameters of experiments. Moreover, these results clarify the interaction of boron with extended He-induced defects.

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