Ion Implantation of KnbO3 and LiNbO3 at Elevated Temperatures

1988 ◽  
Vol 128 ◽  
Author(s):  
C H. Buchal ◽  
R. Irmscher ◽  
P. Günter
Keyword(s):  
Ion Implantation ◽  
Dynamic Recrystallization ◽  
Substrate Temperature ◽  
Elevated Temperatures ◽  
High Dose ◽  
Single Crystalline ◽  
First Time ◽  
High Dose Implantation

ABSTRACTIon implantation, annealing and channeling of single crystalline samples of KnbO3 and LiNbO3 have been studied. Raising the substrate temperature above 600 K, greatly increases the tolerance of the crystals for high-dose implantation. In LiNbO3 dynamic recrystallization has been observed for the first time.

Buried Oxide and Silicide Formation by High-Dose Implantation in Silicon

MRS Bulletin ◽  
1992 ◽  
Vol 17 (6) ◽  
pp. 40-46 ◽  
Author(s):  
G.K. Celler ◽  
Alice E. White
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Integrated Circuit ◽  
High Dose ◽  
High Current ◽  
Silicide Formation ◽  
Semiconductor Substrate ◽  
Beam Currents ◽  
New Generation ◽  
High Dose Implantation

Experiments in ion implantation were first performed almost 40 years ago by nuclear physicists. More recently, ion implanters have become permanent fixtures in integrated circuit processing lines. Manufacture of the more complex integrated circuits may involve as many as 10 different ion implantation steps. Implantation is used primarily at f luences of 1012–1015 ions/cm2 to tailor the electrical properties of a semiconductor substrate, but causing only a small perturbation in the composition of the target (see the article by Seidel and Larson in this issue of the MRS Bulletin). Applications of implantation had been limited by the small beam currents that were available, but recently a new generation of high-current implanters has been developed. This high-current capability allows implanting concentrations up to three orders of magnitude higher than those required for doping—enough to create a compound.

Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach

1996 ◽  
Vol 439 ◽  
Author(s):  
S. Tian ◽  
M. Morris ◽  
S. J. Morris ◽  
B. Obradovic ◽  
A. F. Tasch
Keyword(s):  
Ion Implantation ◽  
Damage Evolution ◽  
Damage Model ◽  
Amorphous Layer ◽  
High Dose ◽  
Defect Production ◽  
Implantation Damage ◽  
Wide Range ◽  
Physically Based ◽  
First Time

AbstractWe present for the first time a physically based ion implantation damage model which successfully predicts both the as-implanted impurity range profiles and the damage profiles for a wide range of implant conditions for arsenic, boron, phosphorus, and BF2 implants into single-crystal (100) silicon. In addition, the amorphous layer thicknesses predicted by this damage model for high dose implants are also generally in excellent agreement with experiments. This damage model explicitly simulates the defect production and its subsequent evolution into the experimentally observable profiles for the first time. The microscopic mechanisms for damage evolution are further discussed.

Ion Beam Synthesis By Tungsten Implantation Into 6h-Silicon Carbide At Elevated Temperatures

1996 ◽  
Vol 423 ◽  
Author(s):  
Hannes Weishart ◽  
W. Matz ◽  
W. Skorupa
Keyword(s):  
Silicon Carbide ◽  
Tungsten Carbide ◽  
Elevated Temperatures ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Bimodal Distribution ◽  
High Dose ◽  
Electrically Conductive ◽  
Implantation Temperature ◽  
High Dose Implantation

AbstractWe studied high dose implantation of tungsten into 6H-silicon carbide in order to synthesize an electrically conductive layer. Implantation was performed at 200 keV with a dose of 1×1017 W+cm−2 at temperatures of 90°C and 500°C. The samples were subsequently annealed either at 950°C or 1100°C. The influence of implantation and annealing temperatures on the reaction of W with SiC was investigated. Rutherford backscattering spectrometry (RBS), x-ray diffiraction (XRD) and Auger electron spectroscopy (AES) contributed to study the structure and composition of the implanted layer as well as the chemical state of the elements. The implantation temperature influences the depth distribution of C, Si and W as well as the damage production in SiC. The W depth profile exhibits a bimodal distribution for high temperature implantation and a customary gaussian distribution for room temperature implantation. Formation of tungsten carbide and silicide was observed in each sample already in the as-implanted state. Implantation at 90°C and annealing at 950°C lead to crystallization of W2C; tungsten silicide, however, remains amorphous. After implantation at 500°C and subsequent annealing at 11007deg;C crystalline W5Si3 forms, while tungsten carbide is amorphous.

Precipitation processes in materials synthesis by high-dose ion implantation of semiconductors

1988 ◽  
Vol 46 ◽  
pp. 486-487
Author(s):  
S. J. Krause ◽  
C. O. Jung ◽  
T.S. Ravi ◽  
S.R. Wilson
Keyword(s):  
Ion Implantation ◽  
Structural Changes ◽  
High Dose ◽  
Materials Synthesis ◽  
Whole Process ◽  
High Temperature Anneal ◽  
Precipitation Processes ◽  
Precipitate Nucleation ◽  
New Phase ◽  
High Dose Implantation

High dose ion implantation for materials synthesis in semiconductors is receiving increasing attention with the commercialization of medium and high current ion implanters. Surface and buried dielectric layers in silicon are being fabricated by high-dose implantation of oxygen, nitrogen, and carbon. Metallic silicides are being synthesized by implantation of metals such as cobalt and nickel. The evolution of a new phase or phases from a supersaturated solid solution during implantation occurs in a zone with increasing concentration which is also in a concentration gradient. Because of this, and the dynamic phenomena occurring, the whole process is quite complex. Additionally, a final, high temperature anneal to remove damage and to consolidate and stabilize the new phase(s) further complicates any analysis. There is no standard approach to analyze structural changes during high dose implantation and subsequent annealing, but it should be possible to approximate the phenomena based on traditional models for precipitation processes in solids. These processes include precipitate nucleation, growth, coarsening, coalescence, and dissolution. The most heavily studied process of materials synthesis by implantation is formation of a buried oxide layer in silicon (often referred to as SIMOX material).

High Dose Implantation of Nitrogen and Phosphor into Silica Glass

1988 ◽  
Vol 128 ◽  
Author(s):  
Takashi Tagami ◽  
Keiji Oyoshi ◽  
Shuhei Tanaka
Keyword(s):  
Surface Chemistry ◽  
Photoelectron Spectroscopy ◽  
Silica Glass ◽  
Nitrogen Concentration ◽  
High Dose ◽  
Xps Spectra ◽  
X Ray ◽  
Phosphosilicate Glass ◽  
First Time ◽  
High Dose Implantation

ABSTRACTThe surface chemistry of silica glass implanted with N+ or P+ ions has been studied. The X-ray photoelectron spectroscopy (XPS) spectra of N(1s) for silica glass implanted with N+ shows the possibility of the formation of oxynitride glass. For the first time, the effect of the implantation of N+ and additional Si+ on the surface chemistry of silica glass has been studied and found to be significant in increasing the nitrogen concentration in the silica glass. The peak concentration of N increases several times, and does not change even if the sample is annealed at 900°C. The XPS spectra of P(2p) for silica glass implanted with P+ ions shows two interactions, both P-O and P-P. Therefore, the XPS spectra shows the possibility for the formation of phosphosilicate glass using P+ implantation into silica glass.

Modeling of Damage Evolution During Ion Implantation into Silicon: a Monte Carlo Approach

1996 ◽  
Vol 438 ◽  
Author(s):  
S. Tian ◽  
M. Morris ◽  
S. J. Morris ◽  
B. Obradovic ◽  
A. F. Tasch
Keyword(s):  
Ion Implantation ◽  
Damage Evolution ◽  
Damage Model ◽  
Amorphous Layer ◽  
High Dose ◽  
Defect Production ◽  
Implantation Damage ◽  
Wide Range ◽  
Physically Based ◽  
First Time

AbstractWe present for the first time a physically based ion implantation damage model which successfully predicts both the as-implanted impurity range profiles and the damage profiles for a wide range of implant conditions for arsenic, boron, phosphorus, and BF2 implants into single-crystal (100) silicon. In addition, the amorphous layer thicknesses predicted by this damage model for high dose implants are also generally in excellent agreement with experiments. This damage model explicitly simulates the defect production and its subsequent evolution into the experimentally observable profiles for the first time. The microscopic mechanisms for damage evolution are further discussed.

Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions

2009 ◽  
Vol 615-617 ◽  
pp. 473-476 ◽  
Author(s):  
Evgenia V. Kalinina ◽  
M.V. Zamoryanskaya ◽  
E.V. Kolesnikova ◽  
Alexander A. Lebedev
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Structural Features ◽  
High Dose ◽  
Radiation Defects ◽  
Transmission Electron ◽  
Order Of Magnitude ◽  
Cathodoluminescence Imaging ◽  
First Time

Structural features of 4H-SiC structures with CVD epitaxial layers, subjected to high-dose Al ion implantation and short high-temperature pulse annealing, have been studied using secondary-ion mass-spectroscopy, transmission electron spectroscopy, local cathodoluminescence and cathodoluminescence imaging on cross-sectionally cleaved surfaces of the structures. An accelerated diffusion of radiation defects, a “long-range action effect”, with a diffusion coefficient of 10 -9 cm2 s-1 after high-dose Al ion implantation and the gettering effect after subsequent pulsed thermal annealing have been observed for the first time. After a short high-temperature annealing, the quality of the starting material is improved in the course of formation of implantation-doped p+-n junctions due to defect gettering. As a result of the decrease in the concentration of optical active defect centers as well of deep centers by an order of magnitude in CVD layer, an increase in the diffusion length of minority carriers (Lp) by a factor of 1.5-2 was obtained.

Microstructure of Ultra High Dose Self Implanted Silicon

1997 ◽  
Vol 504 ◽  
Author(s):  
X. F. Zhu ◽  
J. S. Williams ◽  
D. J. Llewellyn ◽  
J. C. McCallum
Keyword(s):  
Liquid Nitrogen ◽  
Elevated Temperatures ◽  
Solid Phase ◽  
Liquid Nitrogen Temperature ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Strong Dynamic ◽  
High Dose Implantation ◽  
Amorphous Part

ABSTRACTThis study has investigated the microstructure of ultra high dose (∼ 1018 cm−2) self implantation into Si. Implants have been carried out into both (100) Si and pre-amorphised Si as a function of implant temperature between liquid nitrogen temperature and 350°C. Results show that high dose implantation into completely amorphous Si (a-Si) produces layers which regrow quite well during subsequent solid phase epitaxy. In contrast, implantation into crystalline Si (c-Si) or part amorphous/part crystalline Si can lead to rich and varied microstructures at elevated temperatures, even extending to porous-like structures in some cases. Strong dynamic annealing and agglomeration of points defects in c-Si is thought to be responsible for such behaviour.

A Novel Etching Method of Single Crystalline A12o3 Film on Si and Sapphire Using Si Ion Implantation

1995 ◽  
Vol 396 ◽  
Author(s):  
H. Kim ◽  
M. Ishida ◽  
T. Nakamura
Keyword(s):  
Ion Implantation ◽  
Hydrofluoric Acid ◽  
Etch Rate ◽  
Single Crystalline ◽  
Si Substrates ◽  
Etching Method ◽  
Structure Line ◽  
First Time ◽  
Chemical Etchant ◽  
Si Ion Implantation

AbstractA new etching method for a single crystalline ΑI2O3(100) film grown on Si(100) by LPCVD and a sapphire wafer is established for the first time using Si ion-implantation and buffered hydrofluoric acid (HF+H2O) chemical etchant to develop many applications of the SOI structure. Line and space patterns of resist were transferred to sharp A12O3 and Si patterns. An etching of 0.1 2/μm-thick-Al2O3 films on Si substrates and sapphire wafers was observed very clearly. The etch rate is lOOÂ/min under implanted conditions of 80kV and 3×1015 cm-2.The implanted ΑI2O3 surfaces are investigated by SIMS and XPS. The change from AI2O3 to Al2O3 SiO2 (aluminosilicate), which can be easily etched HF+H2O, is considered to be a main reason, though bonds broken by implantation are also effective for this etching.

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