Electrostatic forcing of thin leaky dielectric films under periodic and steady fields

2020 ◽  
Vol 890 ◽  
Author(s):  
Dipin S. Pillai ◽  
R. Narayanan
Keyword(s):  
Dielectric Films ◽  
Leaky Dielectric ◽  
Image Position

Electrically induced pattern formation in thin leaky dielectric films

2005 ◽  
Vol 17 (3) ◽  
pp. 032104 ◽  
Author(s):  
R. V. Craster ◽  
O. K. Matar
Keyword(s):  
Pattern Formation ◽  
Dielectric Films ◽  
Leaky Dielectric

scholarly journals Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films

2020 ◽  
Vol 97 (1) ◽  
pp. 3-6
Author(s):  
Salvador Dueñas ◽  
Helena Castán ◽  
Óscar G. Ossorio ◽  
Guillermo Vinuesa ◽  
Héctor García ◽  
...  
Keyword(s):  
Detection Method ◽  
Dielectric Films ◽  
Experimental Detection ◽  
Quiescent Current ◽  
Leaky Dielectric

Development of high-k hafnium–aluminum oxide dielectric films using sol–gel process

2014 ◽  
Vol 29 (15) ◽  
pp. 1620-1625 ◽  
Author(s):  
Leyong Zhu ◽  
Yana Gao ◽  
Xifeng Li ◽  
X.W. Sun ◽  
Jianhua Zhang
Keyword(s):  
Aluminum Oxide ◽  
Sol Gel ◽  
Dielectric Films ◽  
High K ◽  
Sol Gel Process ◽  
Image Position

Abstract

Measuring the volume charge in dielectric films using single frequency electro-acoustic waves

2014 ◽  
Vol 29 (4) ◽  
pp. 501-508 ◽  
Author(s):  
Dongfei Pei ◽  
Yuri M. Shkel ◽  
Daniel J. Klingenberg ◽  
Zakai I. Segal ◽  
Yoshio Nishi ◽  
...  
Keyword(s):  
Acoustic Waves ◽  
Single Frequency ◽  
Dielectric Films ◽  
Volume Charge ◽  
Image Position

Abstract

scholarly journals Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

1998 ◽  
Vol 3 ◽  
Author(s):  
B. Beaumont ◽  
M. Vaille ◽  
G. Nataf ◽  
A. Bouillé ◽  
J.-C. Guillaume ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Dielectric Films ◽  
Vapour Phase Epitaxy ◽  
Organic Vapor ◽  
Lateral Overgrowth ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Dislocations Density ◽  
Image Position

Selective and lateral overgrowth by Metal Organics Vapour Phase Epitaxy (MOVPE) was carried out until coalescence to produce smooth and optically flat thick GaN layers. A GaN epitaxial layer is first grown using atmospheric pressure Metalorganic Vapour Phase Epitaxy on a {0001} Al2O3. substrate. Then a 30Å silicon nitride dielectric film is deposited in-situ by reaction of silane and ammonia to form a selective mask. Afterwards, the openings and the figures in the dielectric films are achieved using standard photolithographic technology. Stripes openings in the mask, revealing free GaN surface, are aligned in the 〈100〉 direction. Typical stripes spacing and width are 10 µm and 5 µm respectively. These patterned layers are further on used for epitaxial regrowth of GaN by MOVPE. The growth anisotropy and therefore the coalescence process is achieved by introducing (MeCp)2Mg in the vapour phase. A two-step process is reported which allows a dramatic reduction of threading dislocations density not only above the masked areas but also above the windows opened in the mask. With this process, very sharp bound exciton luminescence peaks are measured at low temperature in the overgrown GaN.

scholarly journals Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films

2020 ◽  
Vol MA2020-01 (15) ◽  
pp. 1016-1016
Author(s):  
Salvador Dueñas ◽  
Helena Castán ◽  
Óscar G. Ossorio ◽  
Guillermo Vinuesa ◽  
Héctor García ◽  
...  
Keyword(s):  
Detection Method ◽  
Dielectric Films ◽  
Experimental Detection ◽  
Quiescent Current ◽  
Leaky Dielectric

Simple Identification of Electron Diffraction Ring Patterns

1969 ◽  
Vol 27 ◽  
pp. 160-161
Author(s):  
Carolyn Nohr ◽  
Ann Ayres
Keyword(s):  
Electron Microscope ◽  
Electron Diffraction ◽  
Diffraction Ring ◽  
Image Position

Texts on electron diffraction recommend that the camera constant of the electron microscope be determine d by calibration with a standard crystalline specimen, using the equation

Atomic orientation effects in proton stopping at low velocity

1983 ◽  
Vol 41 ◽  
pp. 708-709
Author(s):  
Kin Lam
Keyword(s):  
Polycrystalline Material ◽  
Charged Particles ◽  
Target Material ◽  
Stopping Power ◽  
Low Velocity ◽  
Electronic Density ◽  
Interatomic Distances ◽  
Frame Work ◽  
Image Position ◽  
Atomic Orientation

The energy of moving ions in solid is dependent on the electronic density as well as the atomic structural properties of the target material. These factors contribute to the observable effects in polycrystalline material using the scanning ion microscope. Here we outline a method to investigate the dependence of low velocity proton stopping on interatomic distances and orientations.The interaction of charged particles with atoms in the frame work of the Fermi gas model was proposed by Lindhard. For a system of atoms, the electronic Lindhard stopping power can be generalized to the formwhere the stopping power function is defined as

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