Electrically induced pattern formation in thin leaky dielectric films

2005 ◽  
Vol 17 (3) ◽  
pp. 032104 ◽  
Author(s):  
R. V. Craster ◽  
O. K. Matar
Keyword(s):  
Pattern Formation ◽  
Dielectric Films ◽  
Leaky Dielectric

scholarly journals Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films

2020 ◽  
Vol 97 (1) ◽  
pp. 3-6
Author(s):  
Salvador Dueñas ◽  
Helena Castán ◽  
Óscar G. Ossorio ◽  
Guillermo Vinuesa ◽  
Héctor García ◽  
...  
Keyword(s):  
Detection Method ◽  
Dielectric Films ◽  
Experimental Detection ◽  
Quiescent Current ◽  
Leaky Dielectric

scholarly journals Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films

2020 ◽  
Vol MA2020-01 (15) ◽  
pp. 1016-1016
Author(s):  
Salvador Dueñas ◽  
Helena Castán ◽  
Óscar G. Ossorio ◽  
Guillermo Vinuesa ◽  
Héctor García ◽  
...  
Keyword(s):  
Detection Method ◽  
Dielectric Films ◽  
Experimental Detection ◽  
Quiescent Current ◽  
Leaky Dielectric

Electron microscopy studies of PZT ferroelectric film capacitor structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1364-1365
Author(s):  
V. Kaushik ◽  
P. Maniar ◽  
J. Olowolafe ◽  
R. Jones ◽  
A. Campbell ◽  
...  
Keyword(s):  
Electric Fields ◽  
Sol Gel ◽  
Ferroelectric Material ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Lead Zirconium Titanate ◽  
Si Substrate ◽  
Film Capacitor ◽  
Pzt Films ◽  
High Dielectric

Lead zirconium titanate films (Pb (Zr,Ti) O3 or PZT) are being considered for potential application as dielectric films in memory technology due to their high dielectric constants. PZT is a ferroelectric material which shows spontaneous polarizability, reversible under applied electric fields. We report herein some results of TEM studies on thin film capacitor structures containing PZT films with platinum-titanium electrodes.The wafers had a stacked structure consisting of PZT/Pt/Ti/SiO2/Si substrate as shown in Figure 1. Platinum acts as electrode material and titanium is used to overcome the problem of platinum adhesion to the oxide layer. The PZT (0/20/80) films were deposited using a sol-gel method and the structure was annealed at 650°C and 800°C for 30 min in an oxygen ambient. XTEM imaging was done at 200KV with the electron beam parallel to <110> zone axis of silicon.Figure 2 shows the PZT and Pt layers only, since the structure had a tendency to peel off at the Ti-Pt interface during TEM sample preparation.

Pattern formation in the splay Freedericks transition of a nematic side-group polysiloxane

1993 ◽  
Vol 3 (6) ◽  
pp. 865-889 ◽  
Author(s):  
Norbert Schwenk ◽  
Hans Wolfgang Spiess
Keyword(s):  
Pattern Formation ◽  
Side Group
Sign in / Sign up

Export Citation Format

Share Document