Measuring the volume charge in dielectric films using single frequency electro-acoustic waves

2014 ◽  
Vol 29 (4) ◽  
pp. 501-508 ◽  
Author(s):  
Dongfei Pei ◽  
Yuri M. Shkel ◽  
Daniel J. Klingenberg ◽  
Zakai I. Segal ◽  
Yoshio Nishi ◽  
...  
Keyword(s):  
Acoustic Waves ◽  
Single Frequency ◽  
Dielectric Films ◽  
Volume Charge ◽  
Image Position

Abstract

Polarization hysteresis in dielectric films using light diffraction by acoustic waves

1984 ◽  
Vol 44 (5) ◽  
pp. 522-524 ◽  
Author(s):  
Alfred E. Attard ◽  
John F. Kuehls
Keyword(s):  
Acoustic Waves ◽  
Light Diffraction ◽  
Dielectric Films

scholarly journals Acoustophoretic Control of Microparticle Transport Using Dual-Wavelength Surface Acoustic Wave Devices

Micromachines ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 52 ◽  
Author(s):  
Jin-Chen Hsu ◽  
Chih-Hsun Hsu ◽  
Yeo-Wei Huang
Keyword(s):  
Particle Motion ◽  
Acoustic Waves ◽  
Acoustic Pressure ◽  
Acoustic Radiation ◽  
Surface Acoustic Waves ◽  
Microfluidic Channel ◽  
Radiation Force ◽  
Dual Wavelength ◽  
Single Frequency ◽  
Motion Trajectories

We present a numerical and experimental study of acoustophoretic manipulation in a microfluidic channel using dual-wavelength standing surface acoustic waves (SSAWs) to transport microparticles into different outlets. The SSAW fields were excited by interdigital transducers (IDTs) composed of two different pitches connected in parallel and series on a lithium niobate substrate such that it yielded spatially superimposed and separated dual-wavelength SSAWs, respectively. SSAWs of a singltablee target wavelength can be efficiently excited by giving an RF voltage of frequency determined by the ratio of the velocity of the SAW to the target IDT pitch (i.e., f = cSAW/p). However, the two-pitch IDTs with similar pitches excite, less efficiently, non-target SSAWs with the wavelength associated with the non-target pitch in addition to target SSAWs by giving the target single-frequency RF voltage. As a result, dual-wavelength SSAWs can be formed. Simulated results revealed variations of acoustic pressure fields induced by the dual-wavelength SSAWs and corresponding influences on the particle motion. The acoustic radiation force in the acoustic pressure field was calculated to pinpoint zero-force positions and simulate particle motion trajectories. Then, dual-wavelength SSAW acoustofluidic devices were fabricated in accordance with the simulation results to experimentally demonstrate switching of SSAW fields as a means of transporting particles. The effects of non-target SSAWs on pre-actuating particles were predicted and observed. The study provides the design considerations needed for the fabrication of acoustofluidic devices with IDT-excited multi-wavelength SSAWs for acoustophoresis of microparticles.

Single-frequency active Q-switched distributed fiber laser using acoustic waves

2007 ◽  
Vol 90 (17) ◽  
pp. 171110 ◽  
Author(s):  
Martina Delgado-Pinar ◽  
Antonio Díez ◽  
José Luis Cruz ◽  
Miguel V. Andrés
Keyword(s):  
Fiber Laser ◽  
Acoustic Waves ◽  
Single Frequency

Exposure of unfedRhipicephalus evertsi mimeticus adults to single-frequency acoustic waves

1989 ◽  
Vol 75 (8) ◽  
pp. 663-664
Author(s):  
Heinrich Kalvelage ◽  
Thomas M�ckl ◽  
Rainer Gothe
Keyword(s):  
Acoustic Waves ◽  
Single Frequency

Leaky Surface Acoustic Waves on Langasite with Thin Dielectric Films

2002 ◽  
Vol 41 (Part 1, No. 5B) ◽  
pp. 3494-3497 ◽  
Author(s):  
Shoji Kakio ◽  
Tamie Yamaguchi ◽  
Yasuhiko Nakagawa
Keyword(s):  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Dielectric Films ◽  
Thin Dielectric Films

Development of high-k hafnium–aluminum oxide dielectric films using sol–gel process

2014 ◽  
Vol 29 (15) ◽  
pp. 1620-1625 ◽  
Author(s):  
Leyong Zhu ◽  
Yana Gao ◽  
Xifeng Li ◽  
X.W. Sun ◽  
Jianhua Zhang
Keyword(s):  
Aluminum Oxide ◽  
Sol Gel ◽  
Dielectric Films ◽  
High K ◽  
Sol Gel Process ◽  
Image Position

Abstract

scholarly journals Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

1998 ◽  
Vol 3 ◽  
Author(s):  
B. Beaumont ◽  
M. Vaille ◽  
G. Nataf ◽  
A. Bouillé ◽  
J.-C. Guillaume ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Dielectric Films ◽  
Vapour Phase Epitaxy ◽  
Organic Vapor ◽  
Lateral Overgrowth ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Dislocations Density ◽  
Image Position

Selective and lateral overgrowth by Metal Organics Vapour Phase Epitaxy (MOVPE) was carried out until coalescence to produce smooth and optically flat thick GaN layers. A GaN epitaxial layer is first grown using atmospheric pressure Metalorganic Vapour Phase Epitaxy on a {0001} Al2O3. substrate. Then a 30Å silicon nitride dielectric film is deposited in-situ by reaction of silane and ammonia to form a selective mask. Afterwards, the openings and the figures in the dielectric films are achieved using standard photolithographic technology. Stripes openings in the mask, revealing free GaN surface, are aligned in the 〈100〉 direction. Typical stripes spacing and width are 10 µm and 5 µm respectively. These patterned layers are further on used for epitaxial regrowth of GaN by MOVPE. The growth anisotropy and therefore the coalescence process is achieved by introducing (MeCp)2Mg in the vapour phase. A two-step process is reported which allows a dramatic reduction of threading dislocations density not only above the masked areas but also above the windows opened in the mask. With this process, very sharp bound exciton luminescence peaks are measured at low temperature in the overgrown GaN.

Causality in the Long Run

1995 ◽  
Vol 11 (3) ◽  
pp. 530-536 ◽  
Author(s):  
W.J. Clive ◽  
Jin-Lung Lin
Keyword(s):  
Spectral Decomposition ◽  
Single Frequency ◽  
Low Frequencies ◽  
Spectral Decompositions ◽  
Long Run ◽  
Narrow Frequency Band ◽  
Information Set ◽  
Definition Of ◽  
Image Position ◽  
Infinite Sum

The definition of causation, discussed in Granger (1980) and elsewhere, has been widely applied in economics and in other disciplines. For this definition, a series yt is said to cause xt+l if it contains information about the forecastability for xt+l contained nowhere else in some large information set, which includes xt−j, j ≥ 0. However, it would be convenient to think of causality being different in extent or direction at seasonal or low frequencies, say, than at other frequencies. The fact that a stationary series is effectively the (uncountably infinite) sum of uncorrelated components, each of which is associated with a single frequency, or a narrow frequency band, introduces the possibility that the full causal relationship can be decomposed by frequency. This is known as the Wiener decomposition or the spectral decomposition of the series, as discussed by Hannan (1970). For any series generated by , where xt, and are both stationary, with finite variances and a(B) is a backward filterwith B the backward operator, there is a simple, well-known relationship between the spectral decompositions of the two series.

scholarly journals Nonlinear Evolution of Acoustic Waves in Dust Interacting with Dark Matter in Newtonian Cosmology: Biasing, Voids, and the Kadomtsev-Petviashvili Equation

1988 ◽  
Vol 130 ◽  
pp. 596-596
Author(s):  
Ronald E. Kates
Keyword(s):  
Dark Matter ◽  
Acoustic Waves ◽  
Nonlinear Evolution ◽  
Type I ◽  
Zero Temperature ◽  
Weakly Nonlinear ◽  
Newtonian Cosmology ◽  
Petviashvili Equation ◽  
Image Position ◽  
Nonlinear Fluctuations

This paper shows that the Kadomtsev -Petvlashvili equation of type I governs the evolution of certain weakly nonlinear fluctuations on a staticor very slowly varying cosmological background. The model consists of a mixture of nonrelativistic, collisionless (here after called “dark”) matter at nonzero temperature together with a smaller amount of zero-temperature rotation- free dust. The two components are coupled only by gravitational forces.

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