The negative mobility: An outcome of the electric field at the hole-injecting metal/organic semiconductor interface that varies as a linear function of the applied bias

2016 ◽  
Vol 616 ◽  
pp. 786-792 ◽  
Author(s):  
M Koželj ◽  
B Cvikl
Keyword(s):  
Electric Field ◽  
Linear Function ◽  
Organic Semiconductor ◽  
Applied Bias ◽  
Semiconductor Interface ◽  
Metal Organic

scholarly journals On Practical Charge Injection at the Metal/Organic Semiconductor Interface

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
Akichika Kumatani ◽  
Yun Li ◽  
Peter Darmawan ◽  
Takeo Minari ◽  
Kazuhito Tsukagoshi
Keyword(s):  
Organic Semiconductor ◽  
Charge Injection ◽  
Semiconductor Interface ◽  
Metal Organic

Chemistry and electronic properties of a metal-organic semiconductor interface: In on CuPc

2005 ◽  
Vol 72 (16) ◽  
Author(s):  
V. Yu. Aristov ◽  
O. V. Molodtsova ◽  
V. M. Zhilin ◽  
D. V. Vyalikh ◽  
M. Knupfer
Keyword(s):  
Electronic Properties ◽  
Organic Semiconductor ◽  
Semiconductor Interface ◽  
Metal Organic

Initial stages of metal/organic semiconductor interface formation

2000 ◽  
Vol 88 (2) ◽  
pp. 889-895 ◽  
Author(s):  
I. G. Hill ◽  
A. J. Mäkinen ◽  
Z. H. Kafafi
Keyword(s):  
Organic Semiconductor ◽  
Interface Formation ◽  
Semiconductor Interface ◽  
Metal Organic

Tuning the Electric Field Response of MOFs by Rotatable Dipolar Linkers

2019 ◽  
Author(s):  
Johannes P. Dürholt ◽  
Babak Farhadi Jahromi ◽  
Rochus Schmid
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Structural Changes ◽  
Dielectric Behavior ◽  
Two Dimensions ◽  
Dielectric Constants ◽  
Electric Response ◽  
Dipole Strength ◽  
Metal Organic ◽  
Dynamics Simulations

Recently the possibility of using electric fields as a further stimulus to trigger structural changes in metal-organic frameworks (MOFs) has been investigated. In general, rotatable groups or other types of mechanical motion can be driven by electric fields. In this study we demonstrate how the electric response of MOFs can be tuned by adding rotatable dipolar linkers, generating a material that exhibits paralectric behavior in two dimensions and dielectric behavior in one dimension. The suitability of four different methods to compute the relative permittivity κ by means of molecular dynamics simulations was validated. The dependency of the permittivity on temperature T and dipole strength μ was determined. It was found that the herein investigated systems exhibit a high degree of tunability and substantially larger dielectric constants as expected for MOFs in general. The temperature dependency of κ obeys the Curie-Weiss law. In addition, the influence of dipolar linkers on the electric field induced breathing behavior was investigated. With increasing dipole moment, lower field strength are required to trigger the contraction. These investigations set the stage for an application of such systems as dielectric sensors, order-disorder ferroelectrics or any scenario where movable dipolar fragments respond to external electric fields.

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