Synthesis of silicon quantum dots in zinc silicate matrix by low-temperature process: Optical, structural and electrical characterization

2014 ◽  
Vol 562 ◽  
pp. 172-180 ◽  
Author(s):  
Anna Castaldo ◽  
Alessandro Antonaia ◽  
Maria Luisa Addonizio
Keyword(s):  
Quantum Dots ◽  
Low Temperature ◽  
Electrical Characterization ◽  
Zinc Silicate ◽  
Silicate Matrix ◽  
Silicon Quantum Dots ◽  
Low Temperature Process

Low temperature radical initiated hydrosilylation of silicon quantum dots

2020 ◽  
Vol 222 ◽  
pp. 190-200
Author(s):  
Timothy T. Koh ◽  
Tingting Huang ◽  
Joseph Schwan ◽  
Pan Xia ◽  
Sean T. Roberts ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Temperature ◽  
Thermal Plasma ◽  
Silicon Quantum Dots ◽  
Radical Initiator ◽  
Non Thermal Plasma

Non-thermal plasma synthesized silicon QDs are functionalized with aromatic and aliphatic ligands using a 2,2′-azobis(2-methylpropionitrile) AIBN radical initiator with hydrosilylation at 60 °C for photon upconversion.

Silanization of Low-Temperature-Plasma Synthesized Silicon Quantum Dots for Production of a Tunable, Stable, Colloidal Solution

2012 ◽  
Vol 116 (6) ◽  
pp. 3979-3987 ◽  
Author(s):  
I. E. Anderson ◽  
R. A. Shircliff ◽  
C. Macauley ◽  
D. K. Smith ◽  
B. G. Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Temperature ◽  
Colloidal Solution ◽  
Low Temperature Plasma ◽  
Silicon Quantum Dots ◽  
Temperature Plasma

Low temperature synthesis of silicon quantum dots with plasma chemistry control in dual frequency non-thermal plasmas

2016 ◽  
Vol 18 (23) ◽  
pp. 15697-15710 ◽  
Author(s):  
Bibhuti Bhusan Sahu ◽  
Yongyi Yin ◽  
Jeon Geon Han ◽  
Masaharu Shiratani
Keyword(s):  
Quantum Dots ◽  
Low Temperature ◽  
Plasma Chemistry ◽  
Thermal Plasmas ◽  
Dual Frequency ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Silicon Quantum Dots ◽  
Low Temperature Deposition ◽  
Temperature Deposition

The design of advanced plasma processes by plasma and radical control is essential for the controlled low-temperature deposition of different size QDs.

scholarly journals High-yield green fabrication of colloidal silicon quantum dots by low-temperature thermal cracking of porous silicon

APL Materials ◽  
2020 ◽  
Vol 8 (8) ◽  
pp. 081105
Author(s):  
Toshihiro Nakamura ◽  
Nobuyoshi Koshida ◽  
Ze Yuan ◽  
Jun Otsubo
Keyword(s):  
Quantum Dots ◽  
Porous Silicon ◽  
Low Temperature ◽  
Thermal Cracking ◽  
High Yield ◽  
Silicon Quantum Dots

SILICON QUANTUM DOTS GROWTH IN SiNx DIELECTRIC: A REVIEW

NANO ◽  
2009 ◽  
Vol 04 (05) ◽  
pp. 265-279 ◽  
Author(s):  
A. K. PANCHAL ◽  
D. K. RAI ◽  
M. MATHEW ◽  
C. S. SOLANKI
Keyword(s):  
Quantum Dots ◽  
Structural Characteristics ◽  
Electrical Characterization ◽  
Compositional Analysis ◽  
Point Of View ◽  
Mis Structure ◽  
X Ray Diffraction ◽  
Silicon Quantum Dots ◽  
Transmission Electron ◽  
Different Characteristics

This paper reviews research works carried out on silicon quantum dots ( Si -QDs) embedded in the silicon nitride ( SiN x) dielectric matrix films with different fabrication techniques and different characteristics. The advantages of SiN x as a dielectric compared to silicon dioxide ( SiO 2) for Si -QDs from a device point of view are discussed. Various fabrication techniques along with different optimized deposition conditions are summarized. The typical results of structural characteristics of the films with Raman spectroscopy and Transmission Electron Microscopy (TEM) are discussed. The origin of photoluminescence (PL) from the films and the chemical compositional analysis such as X-Ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR) and Secondary Ion Mass Spectroscopy (SIMS) analysis of the films are also made available in brief. The charge conduction mechanism in the films with metal–insulator–semiconductor (MIS) structure, with their electrical characterization like capacitance–voltage (C–V) and current–voltage (I–V) measurements are presented.

Communication: Photoinduced Carbon Dioxide Binding with Surface-Functionalized Silicon Quantum Dots

2018 ◽  
Author(s):  
Oscar A. Douglas-Gallardo ◽  
Cristián Gabriel Sánchez ◽  
Esteban Vöhringer-Martinez
Keyword(s):  
Carbon Dioxide ◽  
Quantum Dots ◽  
Atmospheric Carbon Dioxide ◽  
Density Functional ◽  
Tight Binding ◽  
Carbon Dioxide Concentration ◽  
Research Area ◽  
Silicon Quantum Dots ◽  
Dependent Model ◽  
Photoinduced Charge

<div> <div> <div> <p>Nowadays, the search of efficient methods able to reduce the high atmospheric carbon dioxide concentration has turned into a very dynamic research area. Several environmental problems have been closely associated with the high atmospheric level of this greenhouse gas. Here, a novel system based on the use of surface-functionalized silicon quantum dots (sf -SiQDs) is theoretically proposed as a versatile device to bind carbon dioxide. Within this approach, carbon dioxide trapping is modulated by a photoinduced charge redistribution between the capping molecule and the silicon quantum dots (SiQDs). Chemical and electronic properties of the proposed SiQDs have been studied with Density Functional Theory (DFT) and Density Functional Tight-Binding (DFTB) approach along with a Time-Dependent model based on the DFTB (TD-DFTB) framework. To the best of our knowledge, this is the first report that proposes and explores the potential application of a versatile and friendly device based on the use of sf -SiQDs for photochemically activated carbon dioxide fixation. </p> </div> </div> </div>

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