Room- and low-temperature voltage tunable electroluminescence from a single layer of silicon quantum dots in between two thin SiO[sub 2] layers

2000 ◽  
Vol 77 (12) ◽  
pp. 1816 ◽  
Author(s):  
P. Photopoulos ◽  
A. G. Nassiopoulou
Keyword(s):  
Quantum Dots ◽  
Low Temperature ◽  
Single Layer ◽  
Silicon Quantum Dots

Low temperature radical initiated hydrosilylation of silicon quantum dots

2020 ◽  
Vol 222 ◽  
pp. 190-200
Author(s):  
Timothy T. Koh ◽  
Tingting Huang ◽  
Joseph Schwan ◽  
Pan Xia ◽  
Sean T. Roberts ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Temperature ◽  
Thermal Plasma ◽  
Silicon Quantum Dots ◽  
Radical Initiator ◽  
Non Thermal Plasma

Non-thermal plasma synthesized silicon QDs are functionalized with aromatic and aliphatic ligands using a 2,2′-azobis(2-methylpropionitrile) AIBN radical initiator with hydrosilylation at 60 °C for photon upconversion.

Silanization of Low-Temperature-Plasma Synthesized Silicon Quantum Dots for Production of a Tunable, Stable, Colloidal Solution

2012 ◽  
Vol 116 (6) ◽  
pp. 3979-3987 ◽  
Author(s):  
I. E. Anderson ◽  
R. A. Shircliff ◽  
C. Macauley ◽  
D. K. Smith ◽  
B. G. Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Temperature ◽  
Colloidal Solution ◽  
Low Temperature Plasma ◽  
Silicon Quantum Dots ◽  
Temperature Plasma

Low temperature synthesis of silicon quantum dots with plasma chemistry control in dual frequency non-thermal plasmas

2016 ◽  
Vol 18 (23) ◽  
pp. 15697-15710 ◽  
Author(s):  
Bibhuti Bhusan Sahu ◽  
Yongyi Yin ◽  
Jeon Geon Han ◽  
Masaharu Shiratani
Keyword(s):  
Quantum Dots ◽  
Low Temperature ◽  
Plasma Chemistry ◽  
Thermal Plasmas ◽  
Dual Frequency ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Silicon Quantum Dots ◽  
Low Temperature Deposition ◽  
Temperature Deposition

The design of advanced plasma processes by plasma and radical control is essential for the controlled low-temperature deposition of different size QDs.

scholarly journals High-yield green fabrication of colloidal silicon quantum dots by low-temperature thermal cracking of porous silicon

APL Materials ◽  
2020 ◽  
Vol 8 (8) ◽  
pp. 081105
Author(s):  
Toshihiro Nakamura ◽  
Nobuyoshi Koshida ◽  
Ze Yuan ◽  
Jun Otsubo
Keyword(s):  
Quantum Dots ◽  
Porous Silicon ◽  
Low Temperature ◽  
Thermal Cracking ◽  
High Yield ◽  
Silicon Quantum Dots

Communication: Photoinduced Carbon Dioxide Binding with Surface-Functionalized Silicon Quantum Dots

2018 ◽  
Author(s):  
Oscar A. Douglas-Gallardo ◽  
Cristián Gabriel Sánchez ◽  
Esteban Vöhringer-Martinez
Keyword(s):  
Carbon Dioxide ◽  
Quantum Dots ◽  
Atmospheric Carbon Dioxide ◽  
Density Functional ◽  
Tight Binding ◽  
Carbon Dioxide Concentration ◽  
Research Area ◽  
Silicon Quantum Dots ◽  
Dependent Model ◽  
Photoinduced Charge

<div> <div> <div> <p>Nowadays, the search of efficient methods able to reduce the high atmospheric carbon dioxide concentration has turned into a very dynamic research area. Several environmental problems have been closely associated with the high atmospheric level of this greenhouse gas. Here, a novel system based on the use of surface-functionalized silicon quantum dots (sf -SiQDs) is theoretically proposed as a versatile device to bind carbon dioxide. Within this approach, carbon dioxide trapping is modulated by a photoinduced charge redistribution between the capping molecule and the silicon quantum dots (SiQDs). Chemical and electronic properties of the proposed SiQDs have been studied with Density Functional Theory (DFT) and Density Functional Tight-Binding (DFTB) approach along with a Time-Dependent model based on the DFTB (TD-DFTB) framework. To the best of our knowledge, this is the first report that proposes and explores the potential application of a versatile and friendly device based on the use of sf -SiQDs for photochemically activated carbon dioxide fixation. </p> </div> </div> </div>

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