Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

2012 ◽  
Vol 520 (14) ◽  
pp. 4551-4555 ◽  
Author(s):  
T. Bertaud ◽  
D. Walczyk ◽  
Ch. Walczyk ◽  
S. Kubotsch ◽  
M. Sowinska ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Electrode Material ◽  
Metal Insulator ◽  
Metal Insulator Metal

A Survey of Metal Oxides and Top Electrodes for Resistive Memory Devices

2011 ◽  
Vol 1337 ◽  
Author(s):  
S.M. Bishop ◽  
B.D. Briggs ◽  
K.D. Leedy ◽  
S. Addepalli ◽  
N.C. Cady
Keyword(s):  
Metal Oxide ◽  
Metal Oxides ◽  
Resistive Switching ◽  
Electrode Material ◽  
Metal Insulator ◽  
Switching Performance ◽  
Metal Insulator Metal ◽  
Non Volatile Memory ◽  
And Behavior ◽  
Switching Devices

ABSTRACTMetal-insulator-metal (MIM) resistive switching devices are being pursued for a number of applications, including non-volatile memory and high density/low power computing. Reported resistive switching devices vary greatly in the choice of metal oxide and electrode material. Importantly, the choice of both the metal oxide and electrode material can have significant impact on device performance, their ability to switch, and the mode of switching (unipolar, bipolar, nonpolar) that results. In this study, three metal oxides (Cu2O, HfOx, and TiOx) were deposited onto copper bottom electrodes (BEs). Four different top electrode (TE) materials (Ni, Au, Al, and Pt) were then fabricated on the various metal oxides to form MIM structures. Devices were then characterized electrically to determine switching performance and behavior. Our results show that the metal TE plays a large role in determining whether or not the MIM structure will switch resistively and what mode of switching (unipolar, bipolar, or non-polar) is observed.

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

2009 ◽  
Vol 105 (11) ◽  
pp. 114103 ◽  
Author(s):  
Ch. Walczyk ◽  
Ch. Wenger ◽  
R. Sohal ◽  
M. Lukosius ◽  
A. Fox ◽  
...  
Keyword(s):  
Low Power ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Memory Applications

Resistive switching on MgO-based metal-insulator-metal structures grown by molecular beam epitaxy

2014 ◽  
Vol 12 (1-2) ◽  
pp. 246-249 ◽  
Author(s):  
M. Menghini ◽  
C. Quinteros ◽  
C.-Y Su ◽  
P. Homm ◽  
P. Levy ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Resistive Switching ◽  
Molecular Beam ◽  
Metal Insulator ◽  
Metal Structures ◽  
Metal Insulator Metal

Erasing characteristics of Cu[sub 2]O metal-insulator-metal resistive switching memory

2008 ◽  
Vol 92 (1) ◽  
pp. 013503 ◽  
Author(s):  
A. Chen ◽  
S. Haddad ◽  
Y. C. Wu ◽  
T. N. Fang ◽  
S. Kaza ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Metal Insulator ◽  
Resistive Switching Memory ◽  
Metal Insulator Metal ◽  
Switching Memory

scholarly journals The influence of technology and switching parameters on resistive switching behavior of Pt/HfO2/TiN MIM structures

2014 ◽  
Vol 27 (4) ◽  
pp. 621-630 ◽  
Author(s):  
Albena Paskaleva ◽  
Boris Hudec ◽  
Peter Jancovic ◽  
Karol Fröhlich ◽  
Dencho Spassov
Keyword(s):  
Resistive Switching ◽  
Deposition Process ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Conductive Filament ◽  
Metal Insulator ◽  
Dielectric Thickness ◽  
Metal Insulator Metal ◽  
Tin Metal ◽  
Mim Capacitors

Resistive switching (RS) effects in Pt/HfO2/TiN metal-insulator-metal (MIM) capacitors have been investigated in dependence on the TiN bottom electrode engineering, deposition process, switching conditions and dielectric thickness. It is found that RS ratio depends strongly on the amount of oxygen introduced on TiN surface during interface engineering. In some structures a full recovery of conductive filament is observed within more than 100 switching cycles. RS effects are discussed in terms of different energy needed to dissociate O ions in structures with different TiN electrode treatment.

Resistive Switching Behavior and Electrical Properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors

2014 ◽  
Vol 1691 ◽  
Author(s):  
H. García ◽  
H. Castán ◽  
S. Dueñas ◽  
E. Pérez ◽  
L. A. Bailón ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Resistive Switching ◽  
Treatment Effects ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Mim Capacitors

ABSTRACTHo2O3-TiO2 based metal-insulator-metal capacitors were grown by ALD, using Ho(thd)3, Ti(OCH(CH3)2)4 and ozone as precursors. The thicknesses of the films were in the range of 7.7 to 25 nm. Some of the films were post-deposited annealed in order to study the treatment effects. The capacitors were electrically characterized. Leakage current decreases as the amount of holmium increased in the films. Resistive switching behavior was obtained in the samples where the leakage current was low. This effect was also observed in Ho2O3 films, where no titanium was present in the films.

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