Resistive switching on MgO-based metal-insulator-metal structures grown by molecular beam epitaxy

2014 ◽  
Vol 12 (1-2) ◽  
pp. 246-249 ◽  
Author(s):  
M. Menghini ◽  
C. Quinteros ◽  
C.-Y Su ◽  
P. Homm ◽  
P. Levy ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Resistive Switching ◽  
Molecular Beam ◽  
Metal Insulator ◽  
Metal Structures ◽  
Metal Insulator Metal

Resistive switching in HfO2-based atomic layer deposition grown metal–insulator–metal structures

2014 ◽  
Vol 312 ◽  
pp. 112-116 ◽  
Author(s):  
Peter Jančovič ◽  
Boris Hudec ◽  
Edmund Dobročka ◽  
Ján Dérer ◽  
Ján Fedor ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Metal Insulator ◽  
Metal Structures ◽  
Layer Deposition ◽  
Metal Insulator Metal

Resistive switching in metal-insulator-metal structures based on germanium oxide and stabilized zirconia

2014 ◽  
Vol 40 (2) ◽  
pp. 101-103 ◽  
Author(s):  
O. N. Gorshkov ◽  
I. N. Antonov ◽  
A. I. Belov ◽  
A. P. Kasatkin ◽  
A. N. Mikhaylov
Keyword(s):  
Resistive Switching ◽  
Germanium Oxide ◽  
Stabilized Zirconia ◽  
Metal Insulator ◽  
Metal Structures ◽  
Metal Insulator Metal

Near-UV Electroluminescence from a ZnCdSSe/ZnSSe Metal-Insulator- Semiconductor Diode on GaP Grown by Molecular Beam Epitaxy

1993 ◽  
Vol 32 (Part 2, No. 9A) ◽  
pp. L1200-L1202 ◽  
Author(s):  
Kunio Ichino ◽  
Toshikazu Onishi ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
Shigeo Fujita
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Semiconductor Diode ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Surface plasmon modes of nanomesh-on-mirror nanocavities prepared by nanosphere lithography

Nanoscale ◽  
2018 ◽  
Vol 10 (37) ◽  
pp. 17983-17989 ◽  
Author(s):  
Christian Stelling ◽  
Stefan Fossati ◽  
Jakub Dostalek ◽  
Markus Retsch
Keyword(s):  
Surface Plasmon ◽  
Self Assembly ◽  
Nanosphere Lithography ◽  
Analytical Theory ◽  
Narrow Gap ◽  
Metal Insulator ◽  
Metal Structures ◽  
Metal Insulator Metal ◽  
Plasmon Modes

Metal–insulator–metal structures prepared by self-assembly exhibit narrow gap plasmon modes, which are fully described by analytical theory.

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