Activation of phosphorous doping in high quality ZnO thin film grown on Yttria-stabilized zirconia (1 1 1) by thermal treatment

2011 ◽  
Vol 520 (3) ◽  
pp. 994-998 ◽  
Author(s):  
D. Sentosa ◽  
B. Liu ◽  
L.M. Wong ◽  
Y.V. Lim ◽  
T.I. Wong ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Treatment ◽  
Yttria Stabilized Zirconia ◽  
Zno Thin Film ◽  
Stabilized Zirconia ◽  
High Quality

Growth of epitaxial ZnO thin film on yttria-stabilized zirconia single-crystal substrate

2007 ◽  
Vol 298 ◽  
pp. 461-463 ◽  
Author(s):  
Yen-Cheng Chao ◽  
Chih-Wei Lin ◽  
Dong-Jie Ke ◽  
Yue-Han Wu ◽  
Hou-Guang Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Yttria Stabilized Zirconia ◽  
Single Crystal Substrate ◽  
Zno Thin Film ◽  
Stabilized Zirconia ◽  
Crystal Substrate

Epitaxial Growth of “Strain-Free” Indium Oxide Films on (111) Yttria-Stabilized Zirconia by Metal-Organic Chemical Vapor Deposition

2020 ◽  
Vol 1014 ◽  
pp. 22-26
Author(s):  
Yi Zhuo ◽  
Zi Min Chen ◽  
Sheng Dong Zhang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thick Layer ◽  
Chemical Vapor ◽  
Yttria Stabilized Zirconia ◽  
Organic Chemical ◽  
Stabilized Zirconia ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

In this work, In2O3 thin films were grown on (111) yttria-stabilized zirconia (YSZ) by metal-organic chemical vapor deposition (MOCVD) at different temperature. It is found that samples grown at low temperature showed lower residual stress but higher mosaicity while high growth temperatures could also cause deterioration in crystal quality due to increasing lattice mismatch. To obtain high quality In2O3 film with low residual strain, a 30-nm thick layer grown at 530 °C was introduced as buffer layer, considering both stress relaxation and crystalline mosaicity. By using two-step growth method, a 400 nm-thick, high quality, near-strain-free In2O3 thin film with the full width at half maximum (FWHM) values of (222) diffraction peaks being as narrow as 648 arcsec was successfully obtained.

Proton-Conducting Thin Film Grown on Yttria-Stabilized Zirconia Surface for Ammonia Gas Sensing Technologies

2009 ◽  
Vol 12 (9) ◽  
pp. J73 ◽  
Author(s):  
Shinya Teranishi ◽  
Kyohei Kondo ◽  
Masakazu Nishida ◽  
Wataru Kanematsu ◽  
Takashi Hibino
Keyword(s):  
Thin Film ◽  
Gas Sensing ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Ammonia Gas ◽  
Proton Conducting

Magnetic properties of epitaxial TmFe2O4 thin films with an anomalous interfacial structure

2020 ◽  
Vol 8 (34) ◽  
pp. 11704-11714
Author(s):  
You Jin Kim ◽  
Shinya Konishi ◽  
Yuichiro Hayasaka ◽  
Ryo Ota ◽  
Ryosuke Tomozawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetic Properties ◽  
Exchange Bias ◽  
Interface Structure ◽  
Yttria Stabilized Zirconia ◽  
Interfacial Structure ◽  
Stabilized Zirconia ◽  
Bias Effect ◽  
Exchange Bias Effect ◽  
Glassy Behavior

Epitaxial TmFe2O4 thin film with self-assembled interface structure was grown on yttria-stabilized zirconia substrate. TmFe2O4 phase itself shows glassy behavior and the interface leads to the exchange bias effect.

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