Oxygen Transport in Oxide Thin Film Structures Oriented La[sub 0.5]Sr[sub 0.5]CoO[sub 3−x] on Single-Crystal Yttria-Stabilized Zirconia

1999 ◽  
Vol 3 (1) ◽  
pp. 59 ◽  
Author(s):  
C. A. Mims
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Oxygen Transport ◽  
Yttria Stabilized Zirconia ◽  
Oxide Thin Film ◽  
Stabilized Zirconia

YBa2Cu3O7−x Thin Film Growth on Single Crystal and Polycrystalline Yttria-Stabilized Zirconia

1990 ◽  
pp. 157-165
Author(s):  
David P. Norton ◽  
Douglas H. Lowndes ◽  
D. K. Christen ◽  
E. C. Jones ◽  
J. D. Budai ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Film Growth ◽  
Yttria Stabilized Zirconia ◽  
Thin Film Growth ◽  
Stabilized Zirconia

Growth of epitaxial ZnO thin film on yttria-stabilized zirconia single-crystal substrate

2007 ◽  
Vol 298 ◽  
pp. 461-463 ◽  
Author(s):  
Yen-Cheng Chao ◽  
Chih-Wei Lin ◽  
Dong-Jie Ke ◽  
Yue-Han Wu ◽  
Hou-Guang Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Yttria Stabilized Zirconia ◽  
Single Crystal Substrate ◽  
Zno Thin Film ◽  
Stabilized Zirconia ◽  
Crystal Substrate

Proton-Conducting Thin Film Grown on Yttria-Stabilized Zirconia Surface for Ammonia Gas Sensing Technologies

2009 ◽  
Vol 12 (9) ◽  
pp. J73 ◽  
Author(s):  
Shinya Teranishi ◽  
Kyohei Kondo ◽  
Masakazu Nishida ◽  
Wataru Kanematsu ◽  
Takashi Hibino
Keyword(s):  
Thin Film ◽  
Gas Sensing ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Ammonia Gas ◽  
Proton Conducting

Differential impedance analysis of single crystal and polycrystalline yttria stabilized zirconia

2006 ◽  
Vol 51 (8-9) ◽  
pp. 1611-1621 ◽  
Author(s):  
D. Vladikova ◽  
J.A. Kilner ◽  
S.J. Skinner ◽  
G. Raikova ◽  
Z. Stoynov
Keyword(s):  
Single Crystal ◽  
Impedance Analysis ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia

Magnetic properties of epitaxial TmFe2O4 thin films with an anomalous interfacial structure

2020 ◽  
Vol 8 (34) ◽  
pp. 11704-11714
Author(s):  
You Jin Kim ◽  
Shinya Konishi ◽  
Yuichiro Hayasaka ◽  
Ryo Ota ◽  
Ryosuke Tomozawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetic Properties ◽  
Exchange Bias ◽  
Interface Structure ◽  
Yttria Stabilized Zirconia ◽  
Interfacial Structure ◽  
Stabilized Zirconia ◽  
Bias Effect ◽  
Exchange Bias Effect ◽  
Glassy Behavior

Epitaxial TmFe2O4 thin film with self-assembled interface structure was grown on yttria-stabilized zirconia substrate. TmFe2O4 phase itself shows glassy behavior and the interface leads to the exchange bias effect.

Synchrotron radiation study of yttria-stabilized zirconia, Zr0.758Y0.242O1.879

1999 ◽  
Vol 55 (5) ◽  
pp. 726-735 ◽  
Author(s):  
N. Ishizawa ◽  
Y. Matsushima ◽  
M. Hayashi ◽  
M. Ueki
Keyword(s):  
Synchrotron Radiation ◽  
Single Crystal ◽  
Yttria Stabilized Zirconia ◽  
Data Sets ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
X Ray ◽  
Ideal Position ◽  
Fluorite Type ◽  
The Ideal

The fluorite-related cubic structure of yttria-stabilized zirconia, Zr0.75 8Y0.24 2O1.87 9, has been studied by single-crystal X-ray diffraction using synchrotron radiation and by EXAFS. Two diffraction data sets obtained at X-ray energies of 512 and 10 eV below the Y K edge revealed that in the average structure Zr atoms are displaced from the origin of the space group Fm3¯m along 〈111〉 by 0.19 Å, while Y atoms reside at the origin. Approximately 48% of the O atoms occupy the ideal position in the fluorite-type structure, while 43% of O atoms are displaced from the ideal position along 〈001〉 by 0.31 Å. The remaining 9% of O atoms are presumably sited at interstitial positions. Local structures around Zr and Y are investigated by combining the results of single-crystal X-ray diffraction and EXAFS studies.

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