Formation mechanism of ZnSiO3 nanoparticles embedded in an amorphous interfacial layer between a ZnO thin film and an n-Si (001) substrate due to thermal treatment

2008 ◽  
Vol 103 (8) ◽  
pp. 083520 ◽  
Author(s):  
J. M. Yuk ◽  
J. Y. Lee ◽  
J. H. Jung ◽  
D. U. Lee ◽  
T. W. Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Treatment ◽  
Formation Mechanism ◽  
Interfacial Layer ◽  
Zno Thin Film

Activation of phosphorous doping in high quality ZnO thin film grown on Yttria-stabilized zirconia (1 1 1) by thermal treatment

2011 ◽  
Vol 520 (3) ◽  
pp. 994-998 ◽  
Author(s):  
D. Sentosa ◽  
B. Liu ◽  
L.M. Wong ◽  
Y.V. Lim ◽  
T.I. Wong ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Treatment ◽  
Yttria Stabilized Zirconia ◽  
Zno Thin Film ◽  
Stabilized Zirconia ◽  
High Quality

Investigation on the p-type formation mechanism of arsenic doped p-type ZnO thin film

2006 ◽  
Vol 89 (18) ◽  
pp. 181103 ◽  
Author(s):  
Hong Seong Kang ◽  
Gun Hee Kim ◽  
Dong Lim Kim ◽  
Hyun Woo Chang ◽  
Byung Du Ahn ◽  
...  
Keyword(s):  
Thin Film ◽  
Formation Mechanism ◽  
Zno Thin Film ◽  
P Type

Physical Property Evaluation of ZnO Thin Film Fabricated by Low-Temperature Process for Flexible Transparent TFT

2016 ◽  
Vol 16 (4) ◽  
pp. 3168-3175 ◽  
Author(s):  
Adie Bin Mohd Khafe ◽  
Hiraku Watanabe ◽  
Hiroshi Yamauchi ◽  
Shigekazu Kuniyoshi ◽  
Masaaki Iizuka ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Treatment ◽  
Low Temperature ◽  
Physical Property ◽  
Process Temperature ◽  
Zno Thin Film ◽  
X Ray ◽  
Carbon Impurities ◽  
Property Evaluation ◽  
Low Temperature Process

The usual silicon-based display back planes require fairly high process temperature and thus the development of a low temperature process is needed on flexible plastic substrates. A new type of flexible organic light emitting transistor (OLET) had been proposed and investigated in the previous work. By using ultraviolet/ozone (UV/O3) assisted thermal treatments on wet processed zinc oxide field effect transistor (ZnO-FET), through low-process temperature, ZnO-FETs were fabricated which succeeded to achieve target drain current value and mobility. In this study, physical property evaluation of ZnO was conducted in term of their crystallinity, the increase composition of ZnO formed inside the thin film and the decrease of the carbon impurities originated from aqueous solution of the ZnO itself. The X-ray diffraction (XRD) evaluation showed UV/O3 assisted thermal treatment has no obvious effect towards crystallinity of ZnO in the range of low process temperature. Moreover, through X-ray photoelectron spectroscopy (XPS) evaluation and Fourier transform infrared (FT-IR) spectroscopy evaluation, more carbon impurities disappeared from the ZnO thin film and the increase of composition amount of ZnO, when the thin film was subjected to UV/O3 assisted thermal treatment. Therefore, UV/O3 assisted thermal treatment contributed in carbon impurities elimination and accelerate ZnO formation in ZnO thin film, which led to the improvement in the electrical property of ZnO-FET in the low-process temperature.

Two-dimensional BN-doped ZnO thin-film deposition by a thermionic vacuum arc system

2020 ◽  
Vol 31 (9) ◽  
pp. 6948-6955
Author(s):  
Mustafa Özgür ◽  
Suat Pat ◽  
Reza Mohammadigharehbagh ◽  
Uğur Demirkol ◽  
Nihan Akkurt ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Vacuum Arc ◽  
Zno Thin Film ◽  
Two Dimensional ◽  
Doped Zno ◽  
Thermionic Vacuum Arc

A sandwich-structured surface plasmon ultraviolet photodetector based on ZnO thin film

2021 ◽  
Vol 32 (3) ◽  
pp. 2696-2703
Author(s):  
Zexuan Guo ◽  
Man Zhao ◽  
Dayong Jiang ◽  
Jing Zhang ◽  
Chunyan Xu
Keyword(s):  
Thin Film ◽  
Surface Plasmon ◽  
Zno Thin Film ◽  
Ultraviolet Photodetector ◽  
Structured Surface
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