Infinitely high etch selectivity during CH4/H2/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist mask

2008 ◽  
Vol 516 (11) ◽  
pp. 3512-3516 ◽  
Author(s):  
D.Y. Kim ◽  
J.H. Ko ◽  
M.S. Park ◽  
N.-E. Lee
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Photoresist Mask

High-Speed Etching of Indium-Tin-Oxide Thin Films Using an Inductively Coupled Plasma

1994 ◽  
Vol 33 (Part 1, No. 7B) ◽  
pp. 4438-4441 ◽  
Author(s):  
Keiji Nakamura ◽  
Tomonori Imura ◽  
Hideo Sugai ◽  
Michiko Ohkubo ◽  
Katsutaro Ichihara
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Inductively Coupled Plasma ◽  
High Speed ◽  
Oxide Thin Films ◽  
Inductively Coupled

scholarly journals Mechanism for the increase of indium-tin-oxide work function by O2 inductively coupled plasma treatment

2004 ◽  
Vol 95 (2) ◽  
pp. 586-590 ◽  
Author(s):  
Kwang Ho Lee ◽  
Ho Won Jang ◽  
Ki-Beom Kim ◽  
Yoon-Heung Tak ◽  
Jong-Lam Lee
Keyword(s):  
Plasma Treatment ◽  
Work Function ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled

Surface properties of indium tin oxide treated by Cl 2 inductively coupled plasma

2014 ◽  
Vol 316 ◽  
pp. 214-221 ◽  
Author(s):  
Kongduo He ◽  
Xilu Yang ◽  
Hang Yan ◽  
Junyi Gong ◽  
Shaofeng Zhong ◽  
...  
Keyword(s):  
Surface Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled

Manufacture of High Aspect Ratio Bulk Titanium Micro-Parts by Inductively Coupled Plasma Etching

2008 ◽  
Author(s):  
Gang Zhao ◽  
Qiong Shu ◽  
Yue Li ◽  
Jing Chen
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Sidewall Roughness ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Novel Technology ◽  
Micro Parts ◽  
Etching Mask

A novel technology is developed to fabricate high aspect ratio bulk titanium micro-parts by inductively coupled plasma (ICP) etching. An optimized etching rate of 0.9 μm/min has been achieved with an aspect ratio higher than 10:1. For the first time, SU-8 is used as titanium etching mask instead of the traditional hard mask such as TiO2 or SiO2. With an effective selectivity of 3 and a spun-on thickness beyond 100 μm, vertical etching sidewall and low sidewall roughness are obtained. Ultra-deep titanium etching up to 200 μm has been realized, which is among the best of the present reports. Titanium micro-springs and planks are successfully fabricated with this approach.

Sign in / Sign up

Export Citation Format

Share Document