Determination of band offsets in a-Si:H/c-Si heterojunctions from capacitance–voltage measurements: Capabilities and limits

2007 ◽  
Vol 515 (19) ◽  
pp. 7481-7485 ◽  
Author(s):  
A.S. Gudovskikh ◽  
S. Ibrahim ◽  
J.-P. Kleider ◽  
J. Damon-Lacoste ◽  
P. Roca i Cabarrocas ◽  
...  
Keyword(s):  
Band Offsets ◽  
Capacitance Voltage

Determination of band offsets in strained InAsxP1−x/InP quantum well by capacitance voltage profile and photoluminescence spectroscopy

2011 ◽  
Vol 109 (8) ◽  
pp. 083702 ◽  
Author(s):  
V. K. Dixit ◽  
S. D. Singh ◽  
S. Porwal ◽  
Ravi Kumar ◽  
Tapas Ganguli ◽  
...  
Keyword(s):  
Quantum Well ◽  
Photoluminescence Spectroscopy ◽  
Voltage Profile ◽  
Band Offsets ◽  
Capacitance Voltage

Determination of the conduction‐band discontinuities of In0.5Ga0.5P/In1−xGaxAs1−yPy by capacitance–voltage analysis

1995 ◽  
Vol 66 (14) ◽  
pp. 1785-1787 ◽  
Author(s):  
Yong‐Hoon Cho ◽  
Kwan‐Shik Kim ◽  
Sang‐Wan Ryu ◽  
Sang‐Ku Kim ◽  
Byung‐Doo Choe ◽  
...  
Keyword(s):  
Conduction Band ◽  
Capacitance Voltage

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Koteies
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Accurate Determination ◽  
Energy Difference ◽  
Spectroscopic Technique ◽  
Band Offsets ◽  
Band Energy ◽  
Semiconductor Quantum Wells ◽  
Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

Determination of band offsets between p-NiO gate electrode and unintentionally doped GaN for normally-off GaN power device

2017 ◽  
Vol 728 ◽  
pp. 400-403 ◽  
Author(s):  
Liuan Li ◽  
Wenjing Wang ◽  
Liang He ◽  
Xiaorong Zhang ◽  
Zhisheng Wu ◽  
...  
Keyword(s):  
Power Device ◽  
Gate Electrode ◽  
Band Offsets

Metal–oxide–semiconductor capacitance–voltage characteristics and band offsets for Si1−yCy/Si heterostructures

1998 ◽  
Vol 72 (18) ◽  
pp. 2286-2288 ◽  
Author(s):  
K. Rim ◽  
T. O. Mitchell ◽  
D. V. Singh ◽  
J. L. Hoyt ◽  
J. F. Gibbons ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Band Offsets ◽  
Capacitance Voltage
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