scholarly journals Determination of band offsets in strainedInxGa1−xAs∕GaAsquantum wells by capacitance-voltage profiling and Schrödinger-Poisson self-consistent simulation

2004 ◽  
Vol 70 (7) ◽  
Author(s):  
V. I. Zubkov ◽  
M. A. Melnik ◽  
A. V. Solomonov ◽  
E. O. Tsvelev ◽  
F. Bugge ◽  
...  
Keyword(s):  
Band Offsets ◽  
Capacitance Voltage ◽  
Self Consistent

Determination of band offsets in strained InAsxP1−x/InP quantum well by capacitance voltage profile and photoluminescence spectroscopy

2011 ◽  
Vol 109 (8) ◽  
pp. 083702 ◽  
Author(s):  
V. K. Dixit ◽  
S. D. Singh ◽  
S. Porwal ◽  
Ravi Kumar ◽  
Tapas Ganguli ◽  
...  
Keyword(s):  
Quantum Well ◽  
Photoluminescence Spectroscopy ◽  
Voltage Profile ◽  
Band Offsets ◽  
Capacitance Voltage

Determination of band offsets in a-Si:H/c-Si heterojunctions from capacitance–voltage measurements: Capabilities and limits

2007 ◽  
Vol 515 (19) ◽  
pp. 7481-7485 ◽  
Author(s):  
A.S. Gudovskikh ◽  
S. Ibrahim ◽  
J.-P. Kleider ◽  
J. Damon-Lacoste ◽  
P. Roca i Cabarrocas ◽  
...  
Keyword(s):  
Band Offsets ◽  
Capacitance Voltage

Self-consistent determination of the band offsets inInAsxP1−x/InPstrained-layer quantum wells and the bowing parameter of bulkInAsxP1−x

1996 ◽  
Vol 53 (4) ◽  
pp. 1990-1996 ◽  
Author(s):  
M. Beaudoin ◽  
A. Bensaada ◽  
R. Leonelli ◽  
P. Desjardins ◽  
R. A. Masut ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Offsets ◽  
Bowing Parameter ◽  
Self Consistent

scholarly journals Accuracy of Doppler Determinations of Station Positions

1972 ◽  
Vol 48 ◽  
pp. 101-103
Author(s):  
R. J. Anderle
Keyword(s):  
Elevation Angle ◽  
High Elevation ◽  
Time Of Day ◽  
Satellite Observations ◽  
Standard Errors ◽  
Lower Elevation ◽  
Self Consistent

Locations of Doppler satellite observing stations have been revised to obtain a set which is more self-consistent and more consistent with the CIO pole. Residuals of satellite observations for 1970 have been analyzed using the new coordinates to determine mean and standard errors for five days of observations of latitude versus station, time of day, and elevation angle. The accuracy of the determination of latitude is about 4 meters at moderate and high elevation angles. But since more satellite passes occur at lower elevation angles, the accuracy of determination of a component of position based on five days of observation of one satellite is only about 2 meters.

Determination of the conduction‐band discontinuities of In0.5Ga0.5P/In1−xGaxAs1−yPy by capacitance–voltage analysis

1995 ◽  
Vol 66 (14) ◽  
pp. 1785-1787 ◽  
Author(s):  
Yong‐Hoon Cho ◽  
Kwan‐Shik Kim ◽  
Sang‐Wan Ryu ◽  
Sang‐Ku Kim ◽  
Byung‐Doo Choe ◽  
...  
Keyword(s):  
Conduction Band ◽  
Capacitance Voltage

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Koteies
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Accurate Determination ◽  
Energy Difference ◽  
Spectroscopic Technique ◽  
Band Offsets ◽  
Band Energy ◽  
Semiconductor Quantum Wells ◽  
Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

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