Optical emission studies of the gas phase during the silicon suboxide deposition by reactive r.f. magnetron-sputtering

2007 ◽  
Vol 515 (16) ◽  
pp. 6582-6585 ◽  
Author(s):  
Nicolae Tomozeiu
Keyword(s):  
Magnetron Sputtering ◽  
Gas Phase ◽  
Optical Emission ◽  
Silicon Suboxide ◽  
Emission Studies

Laser Induced Fluorescence and Optical Emission Studies of Fluorocarbon Plasmas

1987 ◽  
Vol 98 ◽  
Author(s):  
J. P. Booth ◽  
C. Hancock ◽  
N. D. Perry ◽  
D. C. W. Blaikleye ◽  
J. A. Cairns ◽  
...  
Keyword(s):  
Gas Phase ◽  
Optical Emission Spectroscopy ◽  
Removal Rate ◽  
Dominant Role ◽  
Optical Emission ◽  
Laser Induced Fluorescence ◽  
Fluorocarbon Plasmas ◽  
Emission Studies ◽  
Phase Chemical ◽  
Surface Removal

ABSTRACTLaser induced fluorescence of CF2 has been observed in plasmas of CF4 and its mixtures with O2 and H2. Surface removal rates of the radical in pure CF4 were measured by observing the decay of the radical when the plasma is switched off. The reduction in CF2 concentration, and the increase in F atom concentrations (the latter measured by optical emission spectroscopy) on the addition of O2 is reproduced by a model of the plasma in which gas phase chemical reactions play a dominant role. The increase in CF2 concentration on the addition of H2 to a CF4 plasma is shown to be due to a reduction in the surface removal rate.

Preparation of TiN Films by Magnetron Sputtering and Diagnostics for Optical Emission of Magnetron Plasma.

Shinku ◽  
1995 ◽  
Vol 38 (3) ◽  
pp. 339-342 ◽  
Author(s):  
Yasuki AIHARA ◽  
Yuko HIROHATA ◽  
Tomoaki HINO ◽  
Toshiro YAMASHINA
Keyword(s):  
Magnetron Sputtering ◽  
Optical Emission ◽  
Tin Films

scholarly journals Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1595
Author(s):  
Nomin Lim ◽  
Yeon Sik Choi ◽  
Alexander Efremov ◽  
Kwang-Ho Kwon
Keyword(s):  
Gas Phase ◽  
Photoelectron Spectroscopy ◽  
Reactive Ion Etching ◽  
Research Work ◽  
Optical Emission ◽  
Plasma Parameters ◽  
Ion Etching ◽  
Ar Plasma ◽  
Ar Gas ◽  
Etching Selectivity

This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.

scholarly journals Tuning the coalescence degree in the growth of Pt-Pd nanoalloys

2020 ◽  
Author(s):  
Diana Nelli ◽  
Manuella Cerbelaud ◽  
Riccardo Ferrando ◽  
Chloé Minnai
Keyword(s):  
Magnetron Sputtering ◽  
Gas Phase

Coalescence is a phenomenon in which two or more nanoparticles merge to form a single larger aggregate. By means of gas-phase magnetron-sputtering aggregation experiments on Pt-Pd nanoalloys, it is shown...

Gas-phase clusterization of zinc during magnetron sputtering

2017 ◽  
Vol 62 (1) ◽  
pp. 133-138 ◽  
Author(s):  
A. Kh. Abduev ◽  
A. K. Akhmedov ◽  
A. Sh. Asvarov ◽  
N. M. -R. Alikhanov ◽  
R. M. Emirov ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Gas Phase

scholarly journals Influence of modulation frequency on the synthesis of thin films in pulsed magnetron sputtering processes

2018 ◽  
Vol 36 (4) ◽  
pp. 697-703 ◽  
Author(s):  
G.W. Strzelecki ◽  
K. Nowakowska-Langier ◽  
R. Chodun ◽  
S. Okrasa ◽  
B. Wicher ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Optical Emission Spectroscopy ◽  
Film Growth ◽  
Modulation Frequency ◽  
Optical Emission ◽  
Pulsed Power ◽  
Additional Parameter ◽  
The Impact ◽  
Different Levels ◽  
Pulsed Magnetron

AbstractThe research on the influence of modulation frequency on the properties of films synthesized using a unique pulsed power supply combined with a standard unbalanced circular magnetron was conducted in the process of pulsed magnetron sputtering (PMS). It was shown that by using different levels of modulation, the composition of plasma (measured by optical emission spectroscopy, OES) as well as film growth rate and morphology (observed with scanning electron microscope, SEM), can be changed. The impact of modulation is related to the used materials and gases and can vary significantly. It was concluded that modulation frequency can greatly influence the synthesis of materials and can be used as an additional parameter in PMS. Specific relations between modulation frequency and synthesized material require further investigation.

Optical emission studies in Au/Ag nanoparticles

2007 ◽  
Vol 18 (36) ◽  
pp. 365701 ◽  
Author(s):  
A Longo ◽  
G P Pepe ◽  
G Carotenuto ◽  
A Ruotolo ◽  
S De Nicola ◽  
...  
Keyword(s):  
Ag Nanoparticles ◽  
Optical Emission ◽  
Emission Studies
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