Structural and photoluminescence study of thin GaN film grown on silicon substrate by metalorganic chemical vapor deposition

2007 ◽  
Vol 515 (10) ◽  
pp. 4397-4400 ◽  
Author(s):  
J.X. Zhang ◽  
Y. Qu ◽  
Y.Z. Chen ◽  
A. Uddin ◽  
P. Chen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Photoluminescence Study ◽  
Gan Film ◽  
Metalorganic Chemical

Photoreflectance Study of Gan Film Grown by Metalorganic Chemical Vapor Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
K. Yang ◽  
R. Zhang ◽  
Y. D. Zheng ◽  
L. H. Qin ◽  
B. Shen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Optical Absorption ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Energy Gap ◽  
Chemical Vapor ◽  
Optical Absorption Edge ◽  
Surface Field ◽  
Gan Film ◽  
Metalorganic Chemical

AbstractPhotoreflectance was used to study the optical properties of single crystal hexagonal GaN film on (0001) sapphire substrate grown by metalorganic chemical vapor deposition. The energy gap of GaN was determined as 3.400 eV, and the possible origin of the PR signal was attributed to the modulation of the surface field and lineshape broadening of defects. Optical absorption and cathodoluminescence of the GaN sample were measured, and the optical absorption edge of 3.39 eV and the cathodoluminescence emission peak of 3.461 eV at low temperature (15.6K) confirmed the results of Photoreflectance.

Epitaxial Growth of the GaN Film by Remote-Plasma Metalorganic Chemical Vapor Deposition

1998 ◽  
Vol 37 (Part 1, No. 10) ◽  
pp. 5465-5469 ◽  
Author(s):  
Wei-Chi Lai ◽  
Chun-Yen Chang ◽  
Meiso Yokoyama ◽  
Jen-Dar Guo ◽  
Jian-Shihn Tsang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Gan Film ◽  
Metalorganic Chemical
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