Photoreflectance Study of Gan Film Grown by Metalorganic Chemical Vapor Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
K. Yang ◽  
R. Zhang ◽  
Y. D. Zheng ◽  
L. H. Qin ◽  
B. Shen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Optical Absorption ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Energy Gap ◽  
Chemical Vapor ◽  
Optical Absorption Edge ◽  
Surface Field ◽  
Gan Film ◽  
Metalorganic Chemical

AbstractPhotoreflectance was used to study the optical properties of single crystal hexagonal GaN film on (0001) sapphire substrate grown by metalorganic chemical vapor deposition. The energy gap of GaN was determined as 3.400 eV, and the possible origin of the PR signal was attributed to the modulation of the surface field and lineshape broadening of defects. Optical absorption and cathodoluminescence of the GaN sample were measured, and the optical absorption edge of 3.39 eV and the cathodoluminescence emission peak of 3.461 eV at low temperature (15.6K) confirmed the results of Photoreflectance.

Fabrication/Characterization of a Pseudomorphic Ga0.1In0.9P/InP MESFET

1993 ◽  
Vol 300 ◽  
Author(s):  
M. S. Feng ◽  
Y. M. Hsin ◽  
C. H. Wu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Energy Gap ◽  
Chemical Vapor ◽  
Drain Current ◽  
Low Pressure ◽  
Inp Substrate ◽  
Metalorganic Chemical

ABSTRACTA pseudomorphic Ga0.1In0.9P/InP MESFET grown by low pressure metalorganic chemical vapor deposition(LP-MOCVD) has been fabricated and characterized. The results indicated a transconductance of 66.7 ms/mm and a saturation drain current (Idss) of 55.6 mA have been achieved; furthermore, the Schottky barrier on InGaP as high as 0.67eV can be obtained using Pt2Si as the gate material. For comparison, a conventional InP MESFET with 5μm gate length has also been fabricated on InP epitaxial layer grown by low pressure metalorganic chemical vapor deposition on Fe-doped semi-insulating InP substrate. The transconductance and Idss were found to be 46.7 mS/mm and 43.1 mA at zero gate, respectively, for the depletion mode n-channel MESFET with Au as the gate metal; whereas, for the MESFET using Pt2Si as the gate metal, a transconductance of 40.3 mS/mm and a saturation drain current of 41.1 mA at zero gate bias have been obtained. The results indicated that Ga0.1In0.9P/lnP MESFET has better performance than InP MESFET because of higher energy gap of Ga0.1In0.9P.

Epitaxial Growth of the GaN Film by Remote-Plasma Metalorganic Chemical Vapor Deposition

1998 ◽  
Vol 37 (Part 1, No. 10) ◽  
pp. 5465-5469 ◽  
Author(s):  
Wei-Chi Lai ◽  
Chun-Yen Chang ◽  
Meiso Yokoyama ◽  
Jen-Dar Guo ◽  
Jian-Shihn Tsang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Gan Film ◽  
Metalorganic Chemical

Luminescence study of (112̄0) GaN film grown by metalorganic chemical-vapor deposition

2003 ◽  
Vol 93 (1) ◽  
pp. 316-319 ◽  
Author(s):  
Zhen Chen ◽  
Da-Cheng Lu ◽  
Xianglin Liu ◽  
Xiaohui Wang ◽  
Peide Han ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Luminescence Study ◽  
Gan Film ◽  
Metalorganic Chemical
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