High-rate deposition of microcrystalline silicon with an expanding thermal plasma

2005 ◽  
Vol 491 (1-2) ◽  
pp. 280-293 ◽  
Author(s):  
C. Smit ◽  
A. Klaver ◽  
B.A. Korevaar ◽  
A.M.H.N. Petit ◽  
D.L. Williamson ◽  
...  
Keyword(s):  
Thermal Plasma ◽  
High Rate ◽  
Microcrystalline Silicon

Material Structure of Microcrystalline Silicon Deposited with an Expanding Thermal Plasma

2003 ◽  
Vol 762 ◽  
Author(s):  
C. Smit ◽  
D.L. Williamson ◽  
M.C.M. van de Sanden ◽  
R.A.C.M.M. van Swaaij
Keyword(s):  
Thermal Plasma ◽  
Hydrogen Plasma ◽  
Plasma Chemistry ◽  
Plasma Source ◽  
Growth Direction ◽  
Interaction Time ◽  
Material Structure ◽  
Average Particle ◽  
Microcrystalline Silicon ◽  
X Ray

AbstractExpanding thermal plasma CVD (ETP CVD) has been used to deposit thin microcrystalline silicon films. In this study we varied the position at which the silane is injected in the expanding hydrogen plasma: relatively far from the substrate and close to the plasma source, giving a long interaction time of the plasma with the silane, and close to the substrate, resulting in a short interaction time. The material structure is studied extensively. The crystalline fractions as obtained from Raman spectroscopy as well as from X-ray diffraction (XRD) vary from 0 to 67%. The average particle sizes vary from 6 to 17 nm as estimated from the (111) XRD peak using the Scherrer formula. Small angle X-ray scattering (SAXS) and flotation density measurements indicate void volume fractions of about 4 to 6%. When the samples are tilted the SAXS signal is lower than for the untilted case, indicating elongated objects parallel to the growth direction in the films. We show that the material properties are influenced by the position of silane injection in the reactor, indicating a change in the plasma chemistry.

High-Rate Anisotropic Silicon Etching with the Expanding Thermal Plasma Technique

2019 ◽  
Vol 3 (10) ◽  
pp. 291-298 ◽  
Author(s):  
Michiel A. Blauw ◽  
Peter Van Lankvelt ◽  
F. Roozeboom ◽  
Erwin Kessels ◽  
Richard van de Sanden
Keyword(s):  
Thermal Plasma ◽  
High Rate ◽  
Silicon Etching ◽  
Plasma Technique ◽  
Anisotropic Silicon Etching

scholarly journals Super High Rate Thermal Plasma CVD of Ceramics

1989 ◽  
Vol 97 (1121) ◽  
pp. 49-55 ◽  
Author(s):  
Hideyuki MURAKAMI ◽  
Hifumi NAGAI ◽  
Tohru IROKAWA ◽  
Toyonobu YOSHIDA ◽  
Kazuo AKASHI
Keyword(s):  
Thermal Plasma ◽  
High Rate ◽  
Plasma Cvd

The role of plasma induced substrate heating during high rate deposition of microcrystalline silicon solar cells

2006 ◽  
Vol 511-512 ◽  
pp. 562-566 ◽  
Author(s):  
M.N. van den Donker ◽  
R. Schmitz ◽  
W. Appenzeller ◽  
B. Rech ◽  
W.M.M. Kessels ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Rate ◽  
Silicon Solar Cells ◽  
Microcrystalline Silicon ◽  
Substrate Heating

High rate growth of device-grade microcrystalline silicon films at 8nm/s

2006 ◽  
Vol 90 (18-19) ◽  
pp. 3223-3231 ◽  
Author(s):  
Chisato Niikura ◽  
Michio Kondo ◽  
Akihisa Matsuda
Keyword(s):  
Silicon Films ◽  
High Rate ◽  
Microcrystalline Silicon

Large-Area Hydrogenated Amorphous and Microcrystalline Silicon Double-Junction Solar Cells

2004 ◽  
Vol 808 ◽  
Author(s):  
Baojie Yan ◽  
Guozhen Yue ◽  
Arindam Banerjee ◽  
Jeffrey Yang ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Deposition Time ◽  
High Rate ◽  
Microcrystalline Silicon ◽  
Large Area ◽  
Area Efficiency ◽  
Rf Glow Discharge ◽  
Double Junction ◽  
Junction Structure ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon ( c-Si:H) double-junction solar cells were deposited on a large-area substrate using a RF glow discharge technique at various rates. The thickness uniformity for both a-Si:H and c-Si:H is well within ± 10% and the reproducibility is very good. Preliminary results from the large-area a-Si:H/m c-Si:H double-junction structures show an initial aperture-area efficiency of 11.8% and 11.3%, respectively, for 45 cm2 and 461 cm2 size un-encapsulated solar cells. The 11.3% cell became 10.6% after encapsulation and stabilized at 9.5% after prolonged light soaking under 100 mW/cm2 of white light at 50°C. High rate deposition of the c-Si:H layer in the bottom cell was made using the high-pressure approach. An initial active-area (0.25 cm2) efficiency of 11.3% was achieved using an a-Si:H/m c-Si:H double-junction structure with 50 minutes of c-Si:H deposition time.

A new method used to control the structure of high rate microcrystalline silicon thin films

2010 ◽  
pp. NA-NA
Author(s):  
X. D. Zhang ◽  
H. Zhang ◽  
Q. Yue ◽  
C. C. Wei ◽  
J. Sun ◽  
...  
Keyword(s):  
Thin Films ◽  
New Method ◽  
High Rate ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films
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