scholarly journals Super High Rate Thermal Plasma CVD of Ceramics

1989 ◽  
Vol 97 (1121) ◽  
pp. 49-55 ◽  
Author(s):  
Hideyuki MURAKAMI ◽  
Hifumi NAGAI ◽  
Tohru IROKAWA ◽  
Toyonobu YOSHIDA ◽  
Kazuo AKASHI
Keyword(s):  
Thermal Plasma ◽  
High Rate ◽  
Plasma Cvd

High-Rate Thermal Plasma CVD of SiC

1988 ◽  
Vol 3 (4) ◽  
pp. 423-426 ◽  
Author(s):  
HIDEYUKI MURAKAMI ◽  
TOYONOBU YOSHIDA ◽  
KAZUO AKASHI
Keyword(s):  
Thermal Plasma ◽  
High Rate ◽  
Plasma Cvd

scholarly journals Growth of Diamond Films by High Rate Thermal Plasma CVD

1991 ◽  
Vol 99 (1146) ◽  
pp. 119-123
Author(s):  
Toyohiko KOBAYASHI ◽  
Shozo ONO
Keyword(s):  
Thermal Plasma ◽  
Diamond Films ◽  
High Rate ◽  
Plasma Cvd

High-Rate Anisotropic Silicon Etching with the Expanding Thermal Plasma Technique

2019 ◽  
Vol 3 (10) ◽  
pp. 291-298 ◽  
Author(s):  
Michiel A. Blauw ◽  
Peter Van Lankvelt ◽  
F. Roozeboom ◽  
Erwin Kessels ◽  
Richard van de Sanden
Keyword(s):  
Thermal Plasma ◽  
High Rate ◽  
Silicon Etching ◽  
Plasma Technique ◽  
Anisotropic Silicon Etching

Textured Zinc Oxide by Expanding Thermal Plasma CVD: the Effect of Aluminum Doping

2002 ◽  
Vol 730 ◽  
Author(s):  
R. Groenen ◽  
E.R. Kieft ◽  
J.L. Linden ◽  
M.C.M. van de Sanden
Keyword(s):  
Surface Texture ◽  
Thermal Plasma ◽  
Band Gap Energy ◽  
Zno Films ◽  
Free Carrier Absorption ◽  
Plasma Cvd ◽  
Reflection And Transmission ◽  
Glass Substrates ◽  
Direct Measurements ◽  
Carrier Absorption

AbstractAluminum doped ZnO films are deposited on glass substrates at a temperature of 200°C by expanding thermal plasma CVD. Surface texture, morphology and crystal structure have been studied by AFM, SEM and XRD. A rough surface texture, which is essential for application as front electrode in thin film solar cells, is obtained during deposition. The addition of aluminum as a dopant results in distinct differences in film morphology, a transition from large, rounded crystallites to a more pyramid-like structure is observed. The structure of films is hexagonal with a preferred crystal orientation in the faces (002) and (004), indicating that films are oriented with their c-axes perpendicular to the substrate plane. In addition, spectroscopic ellipsometry is used to evaluate optical and electronic film properties. The presence of aluminum donors in doped films is confirmed by a shift in the ZnO band gap energy from 3.32 to 3.65 eV. In combination with reflection and transmission measurements in the visible and NIR ranges, film resistivities have been obtained from the free-carrier absorption. These results are consistent with direct measurements. Resistivities as low as 6.0 10-4 Ωcm have been obtained.

High-rate deposition of microcrystalline silicon with an expanding thermal plasma

2005 ◽  
Vol 491 (1-2) ◽  
pp. 280-293 ◽  
Author(s):  
C. Smit ◽  
A. Klaver ◽  
B.A. Korevaar ◽  
A.M.H.N. Petit ◽  
D.L. Williamson ◽  
...  
Keyword(s):  
Thermal Plasma ◽  
High Rate ◽  
Microcrystalline Silicon

Towards Stabilized 10% Efficiency of Large-Area (> 5000cm2) a-Si/a-SiGe Tandem Solar Cells using High-Rate Deposition

2001 ◽  
Vol 664 ◽  
Author(s):  
Shingo Okamoto ◽  
Akira Terakawa ◽  
Eiji Maruyama ◽  
Wataru Shinohara ◽  
Makoto Tanaka ◽  
...  
Keyword(s):  
Solar Cells ◽  
Layer Structure ◽  
High Rate ◽  
Plasma Cvd ◽  
Large Area ◽  
Tandem Solar Cells ◽  
Cvd Method ◽  
Hydrogen Dilution ◽  
High Photosensitivity ◽  
Deposition Conditions

ABSTRACTThis paper reviews recent progress in large-area a-Si/a-SiGe tandem solar cells in Sanyo. Much effort has been devoted to increasing both the stabilized efficiency and the process throughput. A key issue in increasing the stabilized efficiency is thinner i-layer structure with an improved optical confinement effect. High-rate deposition of the i-layers has been investigated using rf (13.56MHz) plasma-CVD method while keeping the substrate temperature below 200 °C. A high photosensitivity of 106 of a-Si:H films maintain up to the deposition rate (Rd) of 15 Å/s by optimizing hydrogen dilution and other deposition conditions. It is of great importance to utilize the effect of hydrogen dilution which can reduce the incorporation of excess hydrogen in the films. The world's highest conversion efficiency of 11.2% has been achieved for a large-area (8252cm2) a-Si/a-SiGe tandem by combining the optimized hydrogen dilution and other solar cell related technologies.

Thermometry of gas layers in thermal plasma CVD by pulsed-laser Rayleigh scattering

1996 ◽  
Vol 62 (1) ◽  
pp. 71-75 ◽  
Author(s):  
J. Larjo ◽  
J. Vattulainen ◽  
R. Hernberg
Keyword(s):  
Thermal Plasma ◽  
Rayleigh Scattering ◽  
Pulsed Laser ◽  
Plasma Cvd
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