Controlling the turn-on-voltage in low-voltage Al2O3 organic transistors with mixed self-assembled monolayers

2011 ◽  
Vol 161 (9-10) ◽  
pp. 743-747 ◽  
Author(s):  
Niklas Björklund ◽  
Fredrik S. Pettersson ◽  
Daniel Tobjörk ◽  
Ronald Österbacka
Keyword(s):  
Low Voltage ◽  
Self Assembled Monolayers ◽  
Organic Transistors ◽  
Turn On ◽  
Assembled Monolayers ◽  
Self Assembled

Threshold-Voltage Shifts in Organic Transistors Due to Self-Assembled Monolayers at the Dielectric: Evidence for Electronic Coupling and Dipolar Effects

2015 ◽  
Vol 7 (41) ◽  
pp. 22775-22785 ◽  
Author(s):  
Mahdieh Aghamohammadi ◽  
Reinhold Rödel ◽  
Ute Zschieschang ◽  
Carmen Ocal ◽  
Hans Boschker ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Self Assembled Monolayers ◽  
Electronic Coupling ◽  
Organic Transistors ◽  
Assembled Monolayers ◽  
Self Assembled

Surface Modification of Self-Assembled Monolayers for Organic Transistors

2013 ◽  
Author(s):  
S. Ito ◽  
S.W. Lee ◽  
T. Yokota ◽  
T. Tokuhara ◽  
H. Klauk ◽  
...  
Keyword(s):  
Surface Modification ◽  
Self Assembled Monolayers ◽  
Organic Transistors ◽  
Assembled Monolayers ◽  
Self Assembled

Low-voltage graphene transistors based on self-assembled monolayer nanodielectrics

2012 ◽  
Vol 1451 ◽  
pp. 179-184
Author(s):  
Cecilia Mattevi ◽  
Florian Colléaux ◽  
Hokwon Kim ◽  
Manish Chhowalla ◽  
Thomas D. Anthopoulos
Keyword(s):  
Low Voltage ◽  
Chemical Vapour ◽  
Self Assembled Monolayers ◽  
Operating Voltage ◽  
Self Assembled Monolayer ◽  
Bias Stress ◽  
Operating Stability ◽  
Assembled Monolayers ◽  
Self Assembled ◽  
End Group

ABSTRACTWe demonstrate low operating voltage (<|1.5| V) chemical vapour deposited (CVD) graphene transistors using solution processable organic self-assembled monolayers (SAMs) as nanodielectrics. The transistors show weak extrinsic doping, hysteresis-free operation, low gate-leakage current and good operating stability with bias-stress free characteristics. Most importantly we demonstrate that the Dirac potential can be finely tuned by modifying the molecular end-group of the SAMs without compromising the electrical characteristics of the transistors.

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